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Mécanismes physico-chimiques dans le procédé de gravure plasma du Silicium

Abstract : In microelectronic industries, silicon deep etching allows to obtain high aspect ratio structures (MEMS, MOEMS, vias, deep trench isolation...). Cryoetching is one of different kinds of dry silicon etching processes to realize such structures. The aim of this thesis is the study of mechanisms of SiOxFy passivation layer involved in the silicon plasma etching cryogenic process. This layer is only formed at low temperature (~ -100°C). It is a fragile layer, which mostly disappears when the wafer is warmed up to ambient temperature. The desorbed species are analyzed by a mass spectrometer. SiF4, the main detected species, is the etching product and can participate in the formation of the passivation layer as it is shown by a series of test experiments. Two possible mechanisms can explain the SiOxFy layer formation. To complete this study, in-situ spectroscopic ellipsometer is implemented to analyze the interaction between different plasmas (Ar, SF6, O2, SF6/O2, SiF4/O2) and silicon showing the temperature and ionic flux effect.
In over-passivation, Columnar MicroStructures which are cryoetching defects, appear on silicon surface. The formation of the CMS is studied as a function of different parameters (temperature, Vbias, source power, pressure and time).
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https://tel.archives-ouvertes.fr/tel-00080722
Contributor : Xavier Mellhaoui <>
Submitted on : Tuesday, June 20, 2006 - 12:10:28 PM
Last modification on : Thursday, March 5, 2020 - 6:49:16 PM
Long-term archiving on: : Monday, April 5, 2010 - 11:08:37 PM

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  • HAL Id : tel-00080722, version 1

Citation

Xavier Mellhaoui. Mécanismes physico-chimiques dans le procédé de gravure plasma du Silicium. Micro et nanotechnologies/Microélectronique. Université d'Orléans, 2006. Français. ⟨tel-00080722⟩

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