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Étude de la résistivité et de l'électromigration dans les
interconnexions destinées aux technologies des noeuds
90 nm - 32 nm

Abstract : The resistivity and reliability of copper in interconnections of the integrated circuits for the 90 nm - 32 nm nodes were studied. The context, the processing of the interconnections and the characterisation tools used are presented in a first part. In a second part, the resistivity increase observed by decreasing the copper line width is described with the model of Mayadas. This phenomenon is due to the diffusion of electrons on the crystal defects (grain boundary, external walls, impurities). The resistivity of decananometric size lines, measured using an electrical method, confirms that the resistivity increase is in agreement with the selected model. On the other hand, we showed that such measurements did not allow to separate the contribution of the various mechanisms responsible for this increase. In the last part, the copper electromigration, which is a material displacement under the effect of a wind of electrons, was evaluated electrically. The impact of using new materials (porous dielectric, CVD TiN and ALD TaN diffusion barrier, copper-aluminium alloy, top metallic barriers) and of the reduction of line widths on this phenomenon was estimated. New physical characterisations (in situ SEM electromigration experiment and EBSD texture analysis) were developed and aimed to correlate the local copper microstructure with voiding mechanisms. The main results showed the great importance of mechanical confinement on the lifetime and the risk of using thin diffusion barriers. The most promising results were obtained with the metallic barriers where electromigration properties are close to those expected with bulk material.
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https://tel.archives-ouvertes.fr/tel-00080532
Contributor : Jean-Frédéric Guillaumond <>
Submitted on : Monday, June 19, 2006 - 2:00:25 PM
Last modification on : Friday, October 23, 2020 - 4:41:12 PM
Long-term archiving on: : Monday, April 5, 2010 - 11:02:17 PM

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  • HAL Id : tel-00080532, version 1

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Jean-Frédéric Guillaumond. Étude de la résistivité et de l'électromigration dans les
interconnexions destinées aux technologies des noeuds
90 nm - 32 nm. Micro et nanotechnologies/Microélectronique. Université Joseph-Fourier - Grenoble I, 2005. Français. ⟨tel-00080532⟩

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