H. Mathieu, Physique des semiconducteurs et des composants électroniques, 1987.

J. Crofton, P. A. Barnes, and M. J. Bozack, Quantum mechanical tunneling in an ohmic contact, American Journal of Physics, vol.60, issue.6, pp.499-502, 1992.
DOI : 10.1119/1.16861

T. C. Shen, G. B. Gao, and H. Morkoç, Recent developments in ohmic contacts for III???V compound semiconductors, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.10, issue.5, pp.2113-2132, 1992.
DOI : 10.1116/1.586179

E. Leduc, Optimisation des contacts ohmiques sur GaAs et GaInAs en vue d'améliorer les performances des transistors TEGFET AlInAs/GaInAs sur InP, 1994.

P. A. Verlangerieri, M. Kuznetsov, and M. V. Schneider, Low-resistance ohmic contacts for microwave and lightwave devices, IEEE Microwave and Guided Wave Letters, vol.1, issue.3, pp.51-53, 1991.
DOI : 10.1109/75.80720

W. L. Chen, J. C. Cowles, G. I. Haddad, G. O. Munns, K. W. Eisenbeiser et al., Ohmic contact study for quantum effect transistors and heterojunction bipolar transistors with InGaAs contact layers, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.10, issue.6, pp.6-2354, 1992.
DOI : 10.1116/1.586067

. Marshall, ???GaAs by solid???phase epitaxy of Ge, Journal of Applied Physics, vol.62, issue.3, p.942, 1987.
DOI : 10.1063/1.339705

A. Katz, C. R. Abernathy, and S. J. Pearton, ???GaAs formed by rapid thermal processing, Applied Physics Letters, vol.56, issue.11, pp.11-1028, 1992.
DOI : 10.1063/1.102605

R. Williams, Modern GaAs processing methods, Artech House
DOI : 10.1002/qj.2198

P. Mounaix, Hétérostructures double barrière pour la réalisation de diodes et de transistors à effet tunnel résonant, Thèse de l, 1992.

S. Lida and K. Ito, Selective etching of gallium arsenide crystals in H 2 SO 4 -H 2 O 2 - H 2 O system, J. Electrochem. Soc. Solid State Science, vol.118, pp.5-768, 1971.

S. Adachi and K. Oe, Chemical Etching Characteristics of (001)GaAs, Journal of The Electrochemical Society, vol.130, issue.12, pp.12-2427, 1983.
DOI : 10.1149/1.2119608

C. Decobert, Technologie des diodes tunnel résonnant dectrès faibles sections, 1990.

S. M. Sze, Semiconductor devices, Physics and Technology, A.T.&T. Bell Laboratories, 1985.
DOI : 10.1002/0470068329
URL : http://dx.doi.org/10.1016/s1369-7021(03)00132-9

. Vinter, 1 Ga 0.9 As/GaAs/AlAs pseudomorphic resonant tunnelling diodes integrated with airbridge, Electron. Letters, vol.28, issue.0, pp.10-937, 1992.

K. Y. Hur, M. M. Gitin, F. W. Wise, and R. C. Compton, Mesa-isolated GaAs Schottky-barrier photodiodes, Electronics Letters, vol.28, issue.22, pp.22-2033, 1992.
DOI : 10.1049/el:19921302

S. Tadayon, G. Metze, A. Cornfeld, K. Pande, H. Huang et al., Application of microairbridge insolation in high speed HBT fabrication, Electronic Letters, vol.29, pp.1-26, 1993.

. Adesida, Submicron modulation-doped Field Effect Transistor/metal semi-conductormetalbased Optoelectronic integrated circuit receiver fabricated by direct-write Electron Beam Lithography, Journal of Vac. Sc. Technol. B, vol.10, pp.2936-2940, 1992.

R. G. Woodham, J. R. Cleaver, H. Ahmed, and P. H. Ladbrooke, T-gate, ?-gate and air-bridge fabrication for monolithic microwave integrated circuits by mixed ionbeam , high-voltage electron-beam and optical lithography, Journal of Vac. Sc. Technol. B, vol.10, pp.6-2927, 1992.

H. Chang, R. Nummila, I. Grundbacher, J. Adesida, K. Leburton et al., Fabrication of lateral superlattices using multilayer resist techniques, CHAPITRE II: DIODE SIMPLE BARRIERE VARACTOR CHAPITRE II: DIODE SIMPLE BARRIERE VARACTOR, pp.2900-2903, 1992.
DOI : 10.1116/1.585984

O. Tanguy, P. Salzenstein, P. Mounaix, X. Wallart, and D. Lippens, Single Barrier Varactor for harmonic multiplication, Proceeding of the International Seminar on Terahertz Electronic, Villeneuve d'Ascq (part II), pp.13-14, 1994.
URL : https://hal.archives-ouvertes.fr/hal-00077679

P. Mounaix, E. Lheurette, F. Mollot, and D. Lippens, Frequency capability of strained AlAs/InGaAs resonant tunneling diodes, Electronics Letters, vol.31, pp.17-1508, 1995.

E. Lheurette, P. Mounaix, P. Salzenstein, F. Mollot, and D. Lippens, Planar integration of single and double barrier quantum devices, 5th European Heterostructure Technology Workshop, pp.17-19, 1995.
URL : https://hal.archives-ouvertes.fr/hal-00076897

L. Saint, Modélisation de l'effet tunnel résonant dans les hétérostructures double barrière en vue d'applications analogiques très hautes fréquences, Thèse de l, 1990.

O. Vanbésien, Simulation et Caractérisation électrique des diodes double-barrière à effet tunnel résonnant, thèse de l, 1991.

S. Muto, T. Inata, Y. Sugiyama, Y. Nakata, T. Fujii et al., Quantum Well Width Dependence of Negative Differential Resistance of In 0,52 Al 0,48 As/In 0,53 Ga 0,47 As Resonant Tunneling Barriers Grown by MBE, Japanese Journal of Applied Physics, vol.26, pp.3-220, 1987.

L. Burgnies, O. Vanbésien, V. Sadaune, D. Lippens, J. Nagle et al., Resonant tunnelling structures with local potential perturbations, Journal of Applied Physics, vol.75, pp.9-4527, 1994.
DOI : 10.1063/1.355945

D. Stievenard, X. Delatre, and M. Lannoo, Defect???assisted resonant tunneling: A theoretical model, Applied Physics Letters, vol.61, issue.13, pp.13-1582, 1992.
DOI : 10.1063/1.107503

J. E. Oh, I. Medhi, J. Pamulapati, P. K. Bhattacharya, and G. I. Haddad, The effect of molecular-beam epitaxial growth conditions on the electrical characteristics of In 0,52 Al 0,48 As/In 0,53 Ga 0,47 As resonant tunneling diodes, Journal of Applied Physics, vol.65, pp.2-842, 1989.

D. Tammaro, K. Hess, and F. Capasso, ?-X phonon-assisted thermoionic currents in the GaAs/Al x Ga 1-x As interface system, Journal of Applied Physics, vol.73, pp.12-8536, 1993.

R. Magno and M. G. Spencer, Defect assisted tunneling in GaAs/AlGaAs/GaAs heterostructures, Journal of Applied Physics, vol.75, issue.1, pp.1-368, 1994.
DOI : 10.1063/1.355860

R. Havart, S. M. Sze, and G. Gibbons, Avalanche breakdown voltages of abrupt and linearly graded p-n junctions in Ge, Applied Physics Letters, vol.8, pp.5-111, 1966.

V. Sadaune, Effet tunnel résonnant dans des hétérostructures de matériaux semiconducteurs pour différentes situations de confinement, Thèse de l, 1993.

P. Mounaix, E. Lheurette, F. Mollot, P. Salzenstein, and D. Lippens, Single Barrier Varactors and Resonant Tunneling Diodes for Millimeter Waves Applications, Millimeter Wave Technology and Applications, 1995.
URL : https://hal.archives-ouvertes.fr/hal-00076912

Y. Sun, H. Van-zeijl, J. L. Tauritz, and R. G. Baets, Suspended membrane inductors and capacitors for application in silicon MMIC's, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, pp.99-102, 1996.
DOI : 10.1109/MCS.1996.506312

A. Rahman, G. De-lange, and Q. Hu, Micromachined room???temperature microbolometers for millimeter???wave detection, Applied Physics Letters, vol.68, issue.14, pp.14-2020, 1996.
DOI : 10.1063/1.115624

. Launois, 50-nm x-ray lithography using synchrotron radiation, Journal of Vac. Sc. Technol. B, vol.12, pp.3959-3964, 1994.

T. M. Weller, L. P. Katehi, and G. M. Rebeiz, High performance microshield line components, IEEE Transactions on Microwave Theory and Techniques, vol.43, issue.3, pp.3-534, 1995.
DOI : 10.1109/22.372098

. Whitaker, Micromachined Circuits for Millimeter and Sub-millimeter-Wave Applications, IEEE Antennas & Propagation Magazine, vol.35, pp.5-9, 1993.

R. F. Drayton and L. P. Katehi, Micromachined Circuits for Mm-Wave Applications, Proceeding of the 23rd European Microwave Conference, pp.587-588, 1993.
DOI : 10.1109/euma.1993.336636

D. L. Smith, Plasma deposition of SiN x H y : Process chemistry and film properties, Material Research Society Fall Meeting, Symposium on Characterization of PECVD Processes, paper invited I-2.2, 1989.

W. A. Claassen, W. G. Valkenburg, M. F. Willemsen, and W. M. Van-der-wijgert, Influence of Deposition Temperature, Gaz Pressure, Gaz Phase Composition and RF Frequency on Composition and Mechanical Stress of Plasma Silicon Nitride Layers, Journal of the Electrochemical, vol.Society, pp.894-898, 1985.

E. Kratschmer, A. Erko, V. T. Petrashov, and H. Beneking, Device fabrication by nanolithography and electroplating for magnetic flux quantization measurments, Applied Physics Letters, vol.44, pp.10-1011, 1984.
DOI : 10.1063/1.94602

B. Kebabi, Réalisation de motifs submicroniques pour masques X: contribution à leur réplication par l'utilisation du rayonnement syncrotron, Thèse de l, 1991.

G. Ghione and C. Naldi, Analytical formulas for coplanar lines in hybrid and monolithic MICs, Electronics Letters, vol.20, issue.4, pp.179-181, 1984.
DOI : 10.1049/el:19840120

M. Helal, J. F. Legier, P. Pribetich, and P. Kennis, Analysis of planar transmission lines and microshield lines with arbitrary metallization cross sections using finite elements methods, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4), pp.3-31, 1994.
DOI : 10.1109/MWSYM.1994.335177

B. Bianco and M. Parodi, Determination of the propagation constant of uniform microstrip lines, Alta Frequenza, vol.XLV, pp.107-110, 1976.

P. Salzenstein, O. Dupuis, M. Hélal, E. Lheurette, O. Vanbésien et al., Coplanar waveguides on dielectric membranes micromachined on a GaAs substrate, Electronics Letters, vol.32, issue.9, pp.9-821, 1996.
DOI : 10.1049/el:19960564

P. Salzenstein, O. Dupuis, and E. Lheurette, Usinage de membranes diélectriques sur GaAs: applications aux structures coplanaires suspendues, 3ème Journées Nationales du réseau Microtechnologies, pp.111-112, 1996.

S. V. Robertson, L. P. Katehi, and G. M. Rebeiz, Micromachined W-band filters, IEEE Transactions on Microwave Theory and Techniques, vol.44, issue.4, pp.4-598, 1996.
DOI : 10.1109/22.491027

M. Y. Frankel, R. H. Voelker, and J. N. Hilfiker, Coplanar transmission lines on thin substrates for high-speed low-loss propagation, IEEE Transactions on Microwave Theory and Techniques, vol.42, issue.3, pp.3-396, 1994.
DOI : 10.1109/22.277432

W. Heinrich, Quasi-TEM description of MMIC coplanar lines including conductor-loss effects, IEEE Transactions on Microwave Theory and Techniques, vol.41, issue.1, pp.1-45, 1993.
DOI : 10.1109/22.210228

T. E. Van-deventer, P. B. Katehi, A. C. Cangellaris, B. Du, and . Iv, An integral equation method for the evaluation of conductor and dielectric losses in high-frequency interconnects, IEEE Transactions on Microwave Theory and Techniques, vol.37, issue.12, pp.12-1964, 1989.
DOI : 10.1109/22.44109

O. Tanguy, Multiplicateurs de fréquence à hétérostructures III-V aux longueurs d'ondes millimétrique et submillimétrique, Thèse de l, 1995.

T. W. Crowe, T. C. Grein, R. Zimmermann, and P. Zimmermann, Progress toward solid-state local oscillators at 1 THz, IEEE Microwave and Guided Wave Letters, vol.6, issue.5, pp.5-207, 1996.
DOI : 10.1109/75.491507

T. P. Pearsall, Impact ionization rates for electrons and holes in Ga 0,47 In 0,53 As, Applied Physics Letters, vol.36, pp.3-218, 1980.

A. Rahal, E. Boch, C. Rogers, J. Ovey, and R. G. Bosisio, Planar multi-stack quantum barrier varactor tripler evaluation at W-band, Electronics Letters, vol.31, issue.23, pp.23-2022, 1995.
DOI : 10.1049/el:19951371

E. Lheurette, P. Mounaix, P. Salzenstein, F. Mollot, and D. Lippens, High performance InP-based heterostructure barrier varactors in single and stack configuration, Electronics Letters, vol.32, issue.15, pp.15-1417, 1996.
DOI : 10.1049/el:19960893
URL : https://hal.archives-ouvertes.fr/hal-00076889

S. V. Robertson, L. P. Katehi, and G. M. Rebeiz, Micromachined W-band filters, IEEE Transactions on Microwave Theory and Techniques, vol.44, issue.4, pp.4-598, 1996.
DOI : 10.1109/22.491027

N. I. Dib, L. P. Katehi, G. E. Ponchak, and R. N. Simons, Theoritical and Experimental Characterization of Coplanar Waveguide Discontinuities for Filter Applications, IEEE Transactions on Microwave Theory and Technique, vol.39, pp.5-873, 1991.

T. M. Weller, L. P. Katehi, and G. M. Rebeiz, A 250-GHz microshield bandpass filter, IEEE Microwave and Guided Wave Letters, vol.5, issue.5, pp.5-153, 1995.
DOI : 10.1109/75.374082

D. F. Williams and S. E. Schwarz, Design and Performance of Coplanar Waveguide Bandpass Filters, IEEE Transactions on Microwave Theory and Techniques, vol.31, issue.7, pp.7-558, 1983.
DOI : 10.1109/TMTT.1983.1131545

C. Seassal, J. L. Leclercq, and P. Victorovitch, Fabrication of InP-based freestanding microstructures by selective surface micromachining, Journal of Micromechanics and Microengineering, vol.6, issue.2, pp.1-5, 1996.
DOI : 10.1088/0960-1317/6/2/008

K. Mutamba, M. Flath, A. Vogt, A. Sigurdardottir, A. Dehé et al., Pressure sensors based on stress dependence of AlGaAs/GaAs RTD characteristics, HETECH'96 Workshop, pp.15-17, 1996.

P. Mounaix, E. Lheurette, X. Mélique, and D. Lippens, Surface Micromachining of GaInAs/InP hetrostructures realised by selective wet etching, 1st Europe-Asia Congress on Mechanics, pp.1-3, 1996.