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Les premiers instants de la croissance de films minces d'oxydes métalliques par MOCVD : caractérisation physico-chimique de l'interface film/substrat

Abstract : The initial stages of Metalorganic Chemical Vapour Deposition (MOCVD) of TiO2 thin films on Si(100) were studied in situ by surface analyses (XPS, ARXPS, AES). An original experimental set-up was built for this purpose and developed. Information obtained from these in situ experiments was completed by ex situ characterisations (HRTEM, SIMS, GIXRD...).
The formation of an interfacial SiOy<2 layer resulting of the interaction of the precursor Ti(OCH(CH3)2)4 with the substrate takes place before the formation of stoichiometric TiO2 and leads to the presence of carbon at the interface. At the deposition temperature, 675 °C, silicon diffusion within the TiO2 external layer was also revealed. Concerning the crystalline structure of the films, anatase and rutile crystallites were observed growing within the TiO2 amorphous layer from initial stages of the growth. Rutile grains growth stops during deposition while anatase grains follow their growth forming monocrystalline columns.
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https://tel.archives-ouvertes.fr/tel-00011989
Contributor : Maria del Carmen Marco de Lucas <>
Submitted on : Monday, March 20, 2006 - 4:50:57 PM
Last modification on : Friday, June 8, 2018 - 2:50:07 PM
Long-term archiving on: : Saturday, April 3, 2010 - 8:41:24 PM

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  • HAL Id : tel-00011989, version 1

Citation

Aude Brevet. Les premiers instants de la croissance de films minces d'oxydes métalliques par MOCVD : caractérisation physico-chimique de l'interface film/substrat. Matériaux. Université de Bourgogne, 2006. Français. ⟨tel-00011989⟩

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