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Elaboration et structuration d'empilements Co/Al2O3/Co/Ni80Fe20 par pulverisation ionique

Abstract : A Magnetic Tunnel Junction (MTJ) is composed by two thin ferromagnetic layers (cobalt, iron, nickel) separated by a thin insulating barrier (alumina). This structure has evolved since the measurement of the first Tunnel Magneto Resistance (TMR) at room temperature in 1995. Currently, magnetic tunnel junctions are used in the new generation of magnetic memories (MRAM) and as read head in hard drives.
This study presents the elaboration of Co/Al2O3/Co/Ni80Fe20 magnetic tunnel junctions by Ion Beam Sputtering (IBS). The aim is to prove the potentiality of this deposition technique, which is little used for this application. The Tunnel Magneto Resistance has been determined by two methods. The first method has required a patterning process of the full stacking in a clean room, in order to elaborate the electric contacts. The second method is based on the CIPT principle (Current In Plane Tunneling) which can be performed directly on the full stacking. The obtained results have leaded us to perform ion beam sputtering simulations with SRIM2003 software. Theses simulations will help us to optimize the experimental conditions of the thin films elaboration.
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Contributor : El Houcine Oubensaid <>
Submitted on : Monday, March 6, 2006 - 3:58:48 PM
Last modification on : Wednesday, September 16, 2020 - 4:56:58 PM
Long-term archiving on: : Tuesday, April 6, 2010 - 4:47:42 PM


  • HAL Id : tel-00011764, version 1



El Houcine Oubensaid. Elaboration et structuration d'empilements Co/Al2O3/Co/Ni80Fe20 par pulverisation ionique. Matière Condensée [cond-mat]. Université Paris Sud - Paris XI, 2006. Français. ⟨tel-00011764⟩



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