Analog integrated circuits design techniques for high temperature applications in standard silicon technologies
Techniques de conception des circuits intégrés analogiques pour des applications en haute température, en technologies de conception des circuits intégrés analogiques pour des applications en haute température, en technologies sur substrat de silicium
Résumé
This Ph.D. deals with high temperature microelectronics for low-cost and high-volume applications. Present day most advanced microelectronic technologies, in terms of density, cost and reliability, still use silicon substrates. Theses technologies are designed to obtain long MTF (Mean Time to Failure) at normal temperatures: 0 to 100C, typically. Other technologies, such as Wide Bandgap Semiconductors (SiC, Diamond, etc.) and thin film SOI, are under development to provide good performance at much higher temperatures (>250C).
But, since they presently have lower performances in terms of density and cost, they are less competitive than present day silicon-substrate based technologies. In addition, it is expected for the next ten years
that more than 70% of high temperature applications will still correspond to automotive and oil prospecting applications, having intermediate operating temperatures, lower than 200C. Based on semiconductor devices and microelectronics materials physics, this work will increase, up to 250C, the operation
temperature range of silicon CMOS and BiCMOS standard technologies, by means of integrated circuit design techniques (no process modifications are added, to keep the low-cost feature). The experiments were done using a commercial CMOS and BiCMOS technology; the obtained results could be employed with any similar technology. In addition, the high temperature performance seems to ameliorate in future technologies, since the density increase involves a doping concentration increase and the reduction of the isolation junctions' dimensions.
Two industrial applications, which are good examples of the potential market for high temperature applications, helped to experimentally verify the obtained theoretical results.
But, since they presently have lower performances in terms of density and cost, they are less competitive than present day silicon-substrate based technologies. In addition, it is expected for the next ten years
that more than 70% of high temperature applications will still correspond to automotive and oil prospecting applications, having intermediate operating temperatures, lower than 200C. Based on semiconductor devices and microelectronics materials physics, this work will increase, up to 250C, the operation
temperature range of silicon CMOS and BiCMOS standard technologies, by means of integrated circuit design techniques (no process modifications are added, to keep the low-cost feature). The experiments were done using a commercial CMOS and BiCMOS technology; the obtained results could be employed with any similar technology. In addition, the high temperature performance seems to ameliorate in future technologies, since the density increase involves a doping concentration increase and the reduction of the isolation junctions' dimensions.
Two industrial applications, which are good examples of the potential market for high temperature applications, helped to experimentally verify the obtained theoretical results.
Cette thèse se situe dans le domaine de la microélectronique à haute température, et concerne particulièrement les applications industrielles à bas coût et grand volume de production. A partirde l'étude de la physique des composants semiconducteurs et des
matériaux pour la microélectronique, cette thèse élargit jusqu'à environ 250C la plage de température d'utilisation des technologies CMOS et BiCMOS standards, sur substrat de silicium, à travers des techniques de conception de circuits intégrés, sans toutefois modifier les procédés de fabrication. Les études et les tests ont été expérimentés sur une technologie CMOS et une technologie BiCMOS commerciales. Deux applications industrielles, représentatives du marché potentiel des applications des circuits intégrés à haute température, ont permis de vérifier dans la pratique les résultats théoriques obtenus.
matériaux pour la microélectronique, cette thèse élargit jusqu'à environ 250C la plage de température d'utilisation des technologies CMOS et BiCMOS standards, sur substrat de silicium, à travers des techniques de conception de circuits intégrés, sans toutefois modifier les procédés de fabrication. Les études et les tests ont été expérimentés sur une technologie CMOS et une technologie BiCMOS commerciales. Deux applications industrielles, représentatives du marché potentiel des applications des circuits intégrés à haute température, ont permis de vérifier dans la pratique les résultats théoriques obtenus.
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