'. .. Oldocc and . Done, 18 -15:39:34s\SR_InitConfig_Z> Allocating memory for '

'. .. Eventfilter, H. Done, and . Mändar, 39:34s\SR_ALD> Allocating memory for18 -15:39:34s\SR_ALD> Allocating memory for 'Proba'... Done, 39:34s\SR_ALD> Initial parameters, pp.18-1518, 2000.

M. Balog, M. Schieber, S. Patai, and M. Michman, Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. I, Journal of Crystal Growth, vol.17, p.298, 1972.
DOI : 10.1016/0022-0248(72)90260-6

M. Balog, M. Schieber, M. Michman, and S. Patai, Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds, Thin Solid Films, vol.41, issue.3, p.247, 1977.
DOI : 10.1016/0040-6090(77)90312-1

M. Balog, M. Schieber, M. Michman, and S. Patai, The chemical vapour deposition and characterization of ZrO2 films from organometallic compounds, Thin Solid Films, vol.47, issue.2, p.109, 1977.
DOI : 10.1016/0040-6090(77)90350-9

]. Y. Chabal, M. K. Chabal, A. B. Weldon, and . Gurevich, Solid State Phenom, Phys. Let. Appl. Phys. Lett, vol.81, issue.76, pp.65-66, 1999.

]. A. Demkov, . H. Demkovdennard-]-r, F. H. Dennard, H. Gaensslen, V. L. Yu et al., Solid State Technol Design of ion-implanted MOSFET s with very small physical dimensions, Phys. Status Solidi B, vol.226, issue.44, p.68, 2001.

]. A. Foster2, V. B. Foster, F. Sulimov, A. L. Lopez-gejo, R. M. Shluger et al., Modelling of point defects in monoclinic zirconia, Proceedings of the IEEE, pp.101-107, 2001.
DOI : 10.1016/S0022-3093(02)00974-2

]. S. Haukka, E. Haukka, A. Lakomaa, and . Root, An IR and NMR study of the chemisorption of titanium tetrachloride on silica, The Journal of Physical Chemistry, vol.97, issue.19, p.5085, 1993.
DOI : 10.1021/j100121a040

]. W. Jacobs, A. Jacobs, P. Kersch, W. Moll, and G. Sabisch, Schulze Icking-Konert, International Electron Devices Meeting, Jeloaica2] L. Jeloaica, p.3, 2002.

]. S. Kasap, ]. W. Kasapkersch, A. Jacobs, G. Kersch, G. Prechtl et al., Schulze Icking-KonertProc. of SISPAD, Principles of Electrical Engineering Materials and Devices, pp.137-1032, 1965.

J. Li-modelling-simullucovsky, ]. G. Lucovsky, Y. Wu, H. Niimi, V. Misra et al., [Lim] Electrochemical and Solid-State Letters 7, Mater. Sci. Eng. Appl. Phys. Lett, vol.11, issue.74, pp.173-177, 1999.

]. Newman, G. Mej-newman, ]. E. Barkemanicollian, J. R. Nicollian, and . Brews, Monte Carlo methods in statistical physics MOS (Metal Oxide Semiconductor) Physics and Technology, Niinistö] L. Niinistö, pp.147-1197, 1982.

. Schröder, International Electron Devices Meeting, 2003.

]. D. Rapaport, . Rapaportrenault-]-o, D. Renault, J. Samour, D. Damlencourt et al., The Art of Molecular Dynamics Simulation, Ritala, R. Matero et al, pp.3627-250, 1996.

M. Ritala, M. Leskelä, E. Nykanen, P. Soininen, and L. Niinisto, Growth of titanium dioxide thin films by atomic layer epitaxy, Thin Solid Films, vol.225, issue.1-2, p.288, 1993.
DOI : 10.1016/0040-6090(93)90172-L

]. Y. Widjaja1, C. B. Widjaja, C. B. Widjaja, and . Musgrave, Applied physics review, Wyckoff] R. Wyckoff, éd. Crystal Structure, pp.3304-304, 1965.

]. X. Zhao1, D. Zhao, and . Vanderbilt, Phonons and lattice dielectric properties of zirconia, Vanderbilt, Proceeding of the 2002 MRS Fall Meeting, pp.75105-75112, 2002.
DOI : 10.1103/PhysRevB.65.075105