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Study of the processes of layer growth and ion beam etching using specular and diffuse X-ray scattering

Abstract : A novel X-ray scattering technique and a dedicated apparatus have been conceived and realized at the optics beamline BM5 at the ESRF. The apparatus permits to study the surface roughness in-situ and in real time via grazing incidence X-ray scattering. The
interaction of X-rays with the surface was analyzed in the framework of the first order scalar perturbation theory expressing the surface's attributes through the power spectral density function. Information on the rms roughness, the correlation length, the roughness conformity and the scaling exponents characterizing the synthesis process could be extracted. The potential of the method was demonstrated in two particular cases: thin film deposition by magnetron sputtering and surface etching by ion beam bombardment.
Finally, the experimental results obtained were discussed in the light of the present models of film growth and ion interaction with solids.
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https://tel.archives-ouvertes.fr/tel-00011519
Contributor : Luca Peverini <>
Submitted on : Wednesday, February 1, 2006 - 2:45:35 PM
Last modification on : Thursday, February 2, 2006 - 5:12:21 PM
Long-term archiving on: : Saturday, April 3, 2010 - 10:02:29 PM

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  • HAL Id : tel-00011519, version 1

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Luca Peverini. Study of the processes of layer growth and ion beam etching using specular and diffuse X-ray scattering. Condensed Matter [cond-mat]. Université Joseph-Fourier - Grenoble I, 2005. English. ⟨tel-00011519⟩

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