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Nitrures semiconducteurs III-V : croissance, transport électronique et applications aux transistors

Abstract : The potential of Ga(In,Sb)AsN alloys for transistor applications is evaluated. RHEED observation is first led as a function of substrate temperature and nitrogen concentration in order to set the growth procedure. The transport properties are then investigated by means of cyclotron resonance as well as classical and quantum Hall effect. The presence of electron traps is evidenced: they are attributed to nitrogen clusters and represent about 1% of the total nitrogen concentration. They involve a strong charged impurity-like diffusion which make the mobility fall even for the lowest nitrogen concentrations. An anormally strong phonon diffusion is also found. A slight increase in the effective mass is measured. These properties don't fit the transistor application, event though the voltage to be applied for a given injection current is lowered by the presence of nitrogen. An annexe part deals with GaN-based phototransistors.
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  • HAL Id : tel-00011499, version 1


Robert Mouillet. Nitrures semiconducteurs III-V : croissance, transport électronique et applications aux transistors. Matière Condensée [cond-mat]. Université Pierre et Marie Curie - Paris VI, 2004. Français. ⟨tel-00011499⟩



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