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Développement de filières technologiques dédiées à l'intégration de microsystèmes millimétriques sur silicium

Abstract : Because of the spectrum overcrowding at low frequency, microwave and millimeter-wave bands are now allocated for commercial communication and radar systems. Therefore, a rapid development in microwave and millimeter-wave monolithic integrated circuits (MMICs) is required in term of cost, performances and miniaturization. Consequently, the use of silicon technologies is an attractive issue for the high frequencies communications systems. The silicon substrate presents indeed major advantages in term of cost, micromachining capability and direct integration of SiGe and CMOS circuits. Nevertheless, at microwave and millimetre-wave bands, the performances of interconnects and on-chip passives are limited by the low-resistivity and high dissipation factor of standard silicon substrate. This results in high losses and poor quality factor in the high frequency range. To overcome these drawbacks, this work investigates different technological issues to elaborate an ultra compact RF communication module with low cost and high performances. The first section of this work is dedicated to the state of the art of various approaches proposed to optimize the passive circuits performances on low-resistivity silicon substrate. Secondly, we present different technological issues developed to improve both insertion loss and quality factor of passive components on standard silicon substrates. The first one consists in using thick low-k polymer layers to insulate interconnects and passive circuits from the lossy silicon substrate. The second solution is based on silicon surface micromachining trenches filled with an organic layer. Finally, the last approach consists in employing a bulk silicon micromachining associated to a polymer membrane in order to realize suspended passive components. An important improvement of both attenuation coefficient (superior to 75 %) and quality factor of the coplanar transmission lines is obtained with these technologies compared to classical CPW lines o n bulk silicon. The third part of the memory is dedicated to the application of developed technologies to realize narrow pass-band filters centred at 60 GHz and compact planar antennas working in the 24 GHz ISM band. Finally, in the last section, we develop specific post-processing steps in order to integrate passive devices suspended on polymer membrane with SiGe heterostructures based circuits. The compatibility of each steps, including silicon bulk micromachining, is studied and validated. A design rule is defined in order to appropriately localise the micromachined area from the active devices in order to avoid any deterioration of the active circuits' performances.
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Submitted on : Tuesday, January 17, 2006 - 4:46:37 PM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM
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  • HAL Id : tel-00011400, version 1


Fouad Bouchriha. Développement de filières technologiques dédiées à l'intégration de microsystèmes millimétriques sur silicium. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2005. Français. ⟨tel-00011400⟩



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