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Relaxation des contraintes dans les hétérostructures épaisses (Al,Ga)N : une piste originale pour la réalisation de diodes électroluminscentes à cavité résonante

Abstract : In [0001]-oriented III-nitrides, the glide of threading dislocations is inefficient to relax the misfit stress. When films are grown under tensile stress, the plastic relaxation occurs through the film cracking and the introduction of misfit dislocations from the crack edges. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) have been used in order to characterize cracked (Al,Ga)N/GaN heterostructures. A cooperative mechanism between cracking and ductile relaxation has been outlined. The relaxation rate strongly depends on the (Al,Ga)N film thickness. By combining the lateral growth of (Al,Ga)N and the stress relaxation, cracks have been healed and high quality (Al,Ga)N films have been grown by metal-organic vapor phase epitaxy (MOVPE). Coherent growth of (Al,Ga)N/GaN Bragg mirrors has been carried out on those thick relaxed (Al,Ga)N films. Their optical and electrical properties as well as their stress have been investigated. A resistivity measurement method has been developed to comply with the planar technology. Resonant cavity light emitting diodes (RCLED) have been realized to demonstrate the benefit of this new (Al,Ga)N growth method.
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Contributor : Jean-Marc Bethoux <>
Submitted on : Friday, January 13, 2006 - 10:44:27 AM
Last modification on : Monday, October 12, 2020 - 10:27:29 AM
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Jean-Marc Bethoux. Relaxation des contraintes dans les hétérostructures épaisses (Al,Ga)N : une piste originale pour la réalisation de diodes électroluminscentes à cavité résonante. Matière Condensée [cond-mat]. Université Nice Sophia Antipolis, 2004. Français. ⟨tel-00011372⟩

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