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Optimisation des circuits passifs micro-ondes suspendus sur membrane diélectrique

Abstract : The aim of this work is to present the new developments of technology related to manufacturing of passif circuit on dielectrical membranes. After describing the technology established previously in LAAS and which combines thermal silicon oxide film with low stress silicon nitride deposited by LPCVD. We propose a new low stress recipe to deposit thick silicon oxinitride film obtained by plasma. The major interest of such technology is to increase the rigidity of suspended devices when the membranes width is superior to ten millimeters. RF characterizations of coplanar waveguide lines fabricated on silicon oxinitride membrane were in good agreements with the lines fabricated on composite membrane. The following chapter describes a bulge test system for the mechanical of thin films characterization. The deflection of thin silicon nitride membranes under differential pressure leads to the extraction of Young's modulus and residual stress state. In the last section, we describe a novel technological process based on dry followed by wet backside silicon etching for the manufacturing of 'quasi-three edge' membranes-supported millimeter wave circuits according to the undercut mechanism. In order to validate the technology, a YagiUda antenna for 45 GHz was designed and fabricated. The demonstrator was characterized in terms of return loss and isotropic gain using 'on wafer' measurements. The agreement between the modelling and the measurements is very good, and validates the new technological approach, which assures free-space propagation conditions for endfire membrane-supported antennae structures. Moreover, quasi free edge membranes were simulated using ANSYS tool to understand the deformation behaviour of such a structure.
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Contributor : Catherine Martineau <>
Submitted on : Thursday, January 12, 2006 - 9:37:20 AM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM
Long-term archiving on: : Saturday, April 3, 2010 - 7:17:44 PM


  • HAL Id : tel-00011358, version 1


Mohamed Saadaoui. Optimisation des circuits passifs micro-ondes suspendus sur membrane diélectrique. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2005. Français. ⟨tel-00011358⟩



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