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ETUDE PAR SIMULATION MONTE CARLO D'ARCHITECTURES DE MOSFET ULTRACOURTS A GRILLE MULTIPLE SUR SOI

Abstract : In ultra submicronic (<100 nm) MOSFETs (Metal Oxide Semiconductor Field Effect Transistor), the increase of device integration density deteriorates I-V characteristics (phenomena called “short channel effects”), particularly in the subthreshold regime. Multiple gate MOSFETs are considered the most appealing devices to succeed the classical bulk MOSFET due to their better electrostatic control.
In this context, this work analyses the transition from diffusive to quasi-ballistic transport which occurs in ultra short MOSFET using MONACO a Monte Carlo simulator. According to our studies, “End-of-Roadmap” devices will deliver current very closed to the ballistic limit.
Next, the scaling of multiple gate devices on SOI is studied, inter alia in order to limit parasitic impedances. A compromise between subthreshold behaviour and switching dynamic is discussed and double gate MOSFETs appear to be the most attractive devices.
At last, a new version of MONACO, developed during this thesis, is presented. By coupling the 1D Schrödinger equation with the Monte Carlo Algorithm, this version takes into account quantization effects along the gate axis in ultra-short double gate MOSFETs which are also ultra thin and considers the transport of confined carrier along the source-drain axis.
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Submitted on : Tuesday, January 10, 2006 - 10:58:49 AM
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Jérôme Saint-Martin. ETUDE PAR SIMULATION MONTE CARLO D'ARCHITECTURES DE MOSFET ULTRACOURTS A GRILLE MULTIPLE SUR SOI. Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2005. Français. ⟨tel-00011335⟩

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