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Croissance de boîtes quantiques d'InAs/InP(113)B pour les applications en télécommunications optiques

Abstract : This thesis deals with the study of InAs quantum dots (QDs) growth on InP(113)B, for laser applications around the 1.55 µm optical communication wavelength. QDs are formed in Stransky-Krastanow growth mode by molecular beam epitaxy. The main QD changes with the growth parameters reported in literature are briefly reviewed for InAs/GaAs and InAs/P and the experimental trends are discussed in the frame of nucleation/growth models. Then, structural and optical properties of QDs formed on InP(113)B are studied for different growth parameters. A reduction of the arsenic pressure during QD growth leads to a dramatic increase of the density, up to 1.6 1011cm-2, along with a reduction of the size dispersion. In a other part, we develop a new capping procedure in two steps, named "quaternary Double Cap procedure" (qDC), to control the emission wavelength. This procedure allows also a reduction of height dispersion and a narrowing photoluminescence linewidth to 40 meV. We optimize the QD stacking in order to improve laser performances. At high density, QD present very good vertical and lateral ordering and low size dispersion. Laser structures grown using the qDC procedure show lasing effect at room temperature. Lasers elaborated with low arsenic flux QDs present improved performances. In particular, a record low threshold current density of 190 A/cm2 is achieved.
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Contributor : Philippe Caroff <>
Submitted on : Monday, December 12, 2005 - 11:43:12 AM
Last modification on : Thursday, January 14, 2021 - 3:33:29 AM
Long-term archiving on: : Tuesday, April 6, 2010 - 4:27:43 PM


  • HAL Id : tel-00011186, version 1


Philippe Caroff. Croissance de boîtes quantiques d'InAs/InP(113)B pour les applications en télécommunications optiques. Physique [physics]. INSA de Rennes, 2005. Français. ⟨tel-00011186⟩



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