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Etude des phénomènes électrothermiques liés à l'amorphisation et à la cristallisation d'un matériau à changement de phase pour application aux mémoires non volatiles

Abstract : PC-RAM memories imply a phase-change chalcogenide material, Ge2Sb2Te5, that can reversibly switch between a resistive amorphous state (OFF) and a conductive crystalline state (ON). The objective of the thesis is to study the electrothermal phenomena that may be implicated during the amorphization and crystallization steps.We characterize the thermal and electrical differences between the two phases, by measuring their thermal conductivities (3 ω method), and by drawing the I(V) electrical characteristics.We study in details the mechanisms responsible for the OFF --> ON transition, for the one we point out the formation of an instable conductive amorphous filament.We show the results of the dynamical tests made on our micronic and submicronic cells.Finally, we analyse some models and numerical simulations, showing the experimental difficulty in avoiding the melting during the crystallization step.
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https://tel.archives-ouvertes.fr/tel-00010963
Contributor : Vincent Giraud <>
Submitted on : Monday, November 14, 2005 - 1:34:04 PM
Last modification on : Friday, November 6, 2020 - 3:56:08 AM
Long-term archiving on: : Friday, April 2, 2010 - 10:49:34 PM

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  • HAL Id : tel-00010963, version 1

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Vincent Giraud. Etude des phénomènes électrothermiques liés à l'amorphisation et à la cristallisation d'un matériau à changement de phase pour application aux mémoires non volatiles. Micro et nanotechnologies/Microélectronique. Université Joseph-Fourier - Grenoble I, 2005. Français. ⟨tel-00010963⟩

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