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Etude de la thermomigration de l'aluminium dans le silicium pour la réalisation industrielle de murs d'isolation dans les composants de puissance bidirectionnels

Abstract : The thermomigration of aluminum in silicon has been studied as an alternative means to boron diffusion for the realization of isolation walls in bidirectional power devices. The process of boron solid-state diffusion is limited mainly by its huge thermal budget. Among alternative solutions, the thermomigration offers many advantages such as thermal budget reduction and constant, high doping level. The process is based on the migration of Al/Si liquid droplets by means of a vertical temperature gradient with deposition, in the droplet path, of a silicon solid solution doped with aluminum (at about 1019 at/cm3). The requirement of a vertical temperature gradient leads to the design of a specific rapid thermal processor (RTP). The experimental study has given the main issues raised by the industrialization of this technique, from both "process" and "equipment" side. For example, the necessary introduction of oxygen during the thermomigration annealing dramatically influences the droplet migration. Therefore, new answers have been given to address this problem, especially by considering geometrical parameters of aluminum pattern. Moreover, thorough analysis of the results obtained with the laboratory RTP furnace has given the main specifications of a new equipment allowing industrial application of thermomigration. Finally, thanks to our knowledge of the process, we designed and realized a new power structure, namely a thyristor on epitaxy, whose reverse blocking capability has been demonstrated. Although further investigations are necessary to solve remaining problems, the results we obtained during this study are very promising as regards future industrialization of the process.
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Submitted on : Thursday, November 10, 2005 - 11:11:37 AM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM
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  • HAL Id : tel-00010945, version 1

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Benjamin Morillon. Etude de la thermomigration de l'aluminium dans le silicium pour la réalisation industrielle de murs d'isolation dans les composants de puissance bidirectionnels. Micro et nanotechnologies/Microélectronique. INSA de Toulouse, 2002. Français. ⟨tel-00010945⟩

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