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Etude des mécanismes de dégradation des Transistors Bipolaires à Hétérojonction sur substrat InP destinés aux communications optiques

Abstract : The purpose of this work is the evaluation of the reliability of Heterojunction Bipolar Transistors grown on InP substrate with implementation of specific experimental procedure. In the first part, the manufacturing process of the devices is described and the D.C. electrical characteristics are calculated with physical simulation. In the second part, the D.C. electrical characterization and the associated model allow to extract its parameters before ageing and to make a statistical study of the extracted values. In the third part, two specific parasitic electrical mechanisms in direct connection with the reliability of the devices are analyzed : the breakdown of the base-collector junction and the low-frequency noise. Finally, the study of the degradation mechanisms of aged devices under selected bias and thermal stress highlights a stability of the technology.
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https://tel.archives-ouvertes.fr/tel-00010886
Contributor : Jean-Christophe Martin <>
Submitted on : Tuesday, November 8, 2005 - 4:56:26 PM
Last modification on : Friday, April 19, 2019 - 1:21:00 AM
Long-term archiving on: : Monday, September 20, 2010 - 1:13:10 PM

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  • HAL Id : tel-00010886, version 2

Citation

Jean-Christophe Martin. Etude des mécanismes de dégradation des Transistors Bipolaires à Hétérojonction sur substrat InP destinés aux communications optiques. Micro et nanotechnologies/Microélectronique. Université Sciences et Technologies - Bordeaux I, 2004. Français. ⟨tel-00010886v2⟩

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