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Fabrication et étude des propriétés de diodes Schottky sur diamant homoépitaxié p-/p+

Abstract : Because of its wide band gap of 5.45 eV, diodes made with diamond as semiconductor have huge potentialities such as working at temperatures higher then those supported by other semiconductors, or a breakdown voltage of several kV. The purpose of this work was to grow and study homoepitaxial CVD diamond layers slightly boron-doped prepared with addition of oxygen, that are suited to these diodes, and to study properties of contacts (ohmic and Schottky) made on these layers. Different analytical techniques such as micro-Raman spectroscopy and cathodoluminescence have been used which provide informations about crystalline quality and the nature of defects present in these epilayers. A study of the optimization of dry etching using O2 plasma allowed to realise ohmic contacts on p+ layer and mesa structure. The characteristics of ohmic contacts (Au/Ti and Si/Al/Si) and Schottky contacts (Ar/Ti and Ni/Er) are studied. The generation and passivation of defects and their interaction with the compensation of acceptors introduce by boron, are determined by electrical and transient measurements.
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Contributor : Mamadou Wade <>
Submitted on : Friday, October 14, 2005 - 12:41:10 PM
Last modification on : Thursday, March 25, 2021 - 3:20:11 AM
Long-term archiving on: : Friday, April 2, 2010 - 11:05:36 PM


  • HAL Id : tel-00010636, version 1




Mamadou Wade. Fabrication et étude des propriétés de diodes Schottky sur diamant homoépitaxié p-/p+. Physique [physics]. Université Joseph-Fourier - Grenoble I, 2005. Français. ⟨tel-00010636⟩



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