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Theses

Transistors bipolaires à hétérojonction: Développement d'une filière InP/GaAsSb pour application ultra-rapides

Abstract : This thesis is one of the first works on heterojunction bipolar transistors (HBTs) on InP substrate having a base in GaAsSb. It presents a precise measurement method by electroluminescence
for determination of conduction band offset for the type II heterojunction such as the InP/GaAsSb system. Along with the analysis of HBT electrical characteristics, we were able to clarify the electronic transport conditions and initiate the use of InGaAlAs as emitter in this system. Two specific technological developments were studied : selective chemical etching of InGaAlAs/GaAsSb and low-resistivity ohmic contacts on p-GaAsSb.
The implementation of these keys elements allowed the definition of a fabrication process for high-speed HBTs. The feasibility of this process was demonstrated by the realization of sub-micrometer transistors having frequencies ( fT ; fmax) of (155 ; 162) GHz. Its optimization, protected by two patents, shows prospects to reach frequencies ( fT ; fmax) of (380 ; 420) GHz.
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https://tel.archives-ouvertes.fr/tel-00010627
Contributor : Melania Lijadi <>
Submitted on : Friday, October 14, 2005 - 11:27:02 AM
Last modification on : Monday, December 14, 2020 - 9:53:13 AM
Long-term archiving on: : Friday, April 2, 2010 - 10:37:28 PM

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  • HAL Id : tel-00010627, version 1

Citation

Melania Lijadi. Transistors bipolaires à hétérojonction: Développement d'une filière InP/GaAsSb pour application ultra-rapides. Matière Condensée [cond-mat]. Université Pierre et Marie Curie - Paris VI, 2005. Français. ⟨tel-00010627⟩

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