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Habilitation à diriger des recherches

De nouvelles limites pour le compromis "résistance passante spécifique/tenue en tension" des composants unipolaires de puissance

Abstract : The "specific on-resistance / breakdown voltage" trade-off has always penalized static performance of conventional power MOS devices. Since 1997, new concepts, such as Superjunction, U-diode and FLI-diode, appeared in order to overcome the conventional silicon limits who seemed to be insuperable during the last 20 years. Two of these concepts (U-diode and FLI-diode) have been studied in this work and applied to lateral and vertical power MOSFETs. The most interesting concept for lateral MOSFETs is the U-diode concept : at low voltage range (below 100 Volts), several structures, named LUDMOS, exhibit an excellent "specific on-resistance / breakdown voltage" trade-off close to (and sometimes below) the silicon limit. The most interesting concept for vertical MOSFETs is the FLI-diode concept : actually vertical FLIMOSFETs exhibit breakdown voltages higher than that of the plane junction and specific on-resistances lower than the silicon limit. The technological realization of a 80 Volts FLIMOSFET for automotive applications has allowed the validation of this concept. Thanks to these new concepts, new limits have been defined for silicon : the conventional limit is now overcomed. The innovative solutions proposed have then shown that silicon still has a future in the "power devices and integration" field.
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Habilitation à diriger des recherches
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Submitted on : Friday, October 7, 2005 - 1:53:30 PM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM
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  • HAL Id : tel-00010475, version 1

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Frédéric Morancho. De nouvelles limites pour le compromis "résistance passante spécifique/tenue en tension" des composants unipolaires de puissance. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2004. ⟨tel-00010475⟩

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