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Conception, réalisation et caractérisation de grilles en silicium polycristallin déposé amorphe à basse température et dopé bore in situ

Abstract : Since 40 years microlectronics has always been evolving following the Moore's Law rhythm thanks to the constant shrinking of the MOS transistors dimensions. Gate depletion and boron penetration through the structure, strongly affecting MOS transistors performances, are the two major drawbacks induced by this evolution, when ionic implantation is used. So we proposed another doping method for the gate electrode in order to reduce these two effects: an amorphous deposition of silicon at low temperature, in situ doped, with BCl3 and Si2H6 gas sources. The first chapter is dedicated to a bibliographic study on the state of the art and the technological solutions proposed to improve MOS transistors performances. From this study we showed the interest of the technological solution we have proposed. The second chapter talks about current-voltage and capacitor-voltage simulators we have developed. It has been shown that taking into account carriers' confinement at the interfaces is absolutely necessary to obtain the most accurate extraction of the parameters of the devices. In the third chapter we give the results of the studies of the polysilicon layer (resistivity, stress, roughness&) and the electrical characterization of MOS polySi(P+) / SiO2 (3,8nm) / Si capacitors. Despite a necessary improvement in the gate oxide reliability, the characterization shows that gate depletion is strongly reduced.
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https://tel.archives-ouvertes.fr/tel-00010405
Contributor : Emilie Marchand <>
Submitted on : Wednesday, October 5, 2005 - 10:59:19 AM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM
Long-term archiving on: : Friday, April 2, 2010 - 10:54:56 PM

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  • HAL Id : tel-00010405, version 1

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Emmanuel Jordana. Conception, réalisation et caractérisation de grilles en silicium polycristallin déposé amorphe à basse température et dopé bore in situ. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2005. Français. ⟨tel-00010405⟩

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