. Collimation-naturelle-de-l-'ordre-du-milliradian, Le rayonnement estémisestémis dans un cône d'ouverture très faible, dont l'axe est tangentàtangent`tangentà la trajectoire, et la direction orienté vers l'avant

. Source-de-grande-brillance, nombre de photonsémisphotonsémis pendant un secondè a l'intérieur d'une bande de fréquence donnée, divisé par l'angle solide d'´ emission du rayonnement et par l'aire d'une section de la source)

. Structure-temporelle-pulsée, Dans un synchrotron detroisì eme génération (SOLEIL), les particule sont injectées sous forme de paquets, ce qui confère au rayonnement un caractère pulsé dans la gamme du MHz (7 MHz) avec des durées d'impulsion de l'ordre de quelques dizaines de picosecondes (50 ps) Cette caractéristique peut permettre d'accéderaccéderà des information temporelles sur des structuré electroniques

. Fig, B.1 ? Ligne delumì ere SB7 sur l'anneau Super-ACO

N. La-spectroscopie-de-photoélectrons-et-la-spectroscopie, ionisation et de spectres NEXAFS, ont permis de caractériser les blocs chimiques formés lors de l'adsorption de ces nitriles sur la surface Si(001)-2×1: Si-N=C-Si, C=C=N, C?N libre, C?N en interaction dative avec le silicium et le bloc conjugué C=C-C?N. Utilisée enparalì ele avec ces méthodes, la microscopiè a effet tunnel a permis d'identifier pour l'acrylonitrile et le cyanure de vinyle, les sites d'adsorption sur la surface. La combinaison de ces deux approches a ainsi permis de déterminer de façon nonéquivoquenonéquivoque les géométries d'adsorption. LesétudesLesétudes cinétiques temps-réel menées en rendement Auger, ou en bande de valence, montrent que l'adsorption implique dans tous les cas un précurseur moléculaire

. Ce-type-d-'´-etude-pose-d, intéressantes questions pour ce qui est du traitement théorique de la réactivité de surface du silicium. L'accumulation de données expérimentales permettra d'améliorer la modélisation de la structuré electronique du silicium par une prise en compte des effets de solide (relaxation sur plusieurs plans atomiques en profondeur, transfertélectroniquetransfertélectronique

. Dans-les, excursion en pression se limitè a la gamme 10 ?10 -10 ?6 mbar. CONCLUSION Or la pression peut avoir une influence sur la cinétique et la thermodynamique des réactions. La conception d'une expérience fonctionnantàfonctionnant`fonctionnantà pressionélevéepressionélevée (quelques mbar [105]) permet d'ouvrir des champs de rechercheentì erement nouveaux, sur des surfaces non classiques, mais plus proches de l'expérience quotidienne (glace en fusion La mise en place d'un tel schéma expérimental doitêtrédoitêtré etudiée dans l'environnement de la ligne TEMPO, permise par le haut flux de la ligne, p.121

S. Rangan, F. Bournel, J. Gallet, S. Kubsky, K. Le-guen et al., XPS study of room temperature adsorption of acetonitrile on the Si(001)-2×1 surface, Publications et communications Publications An experimental and theoretical NEXAFS Sirotti, S. Carniato and V. Ilakovac Accepted Phys. Rev. B Dynamic and kinetic aspects of the adsorption of acrylonitrile on Si, pp.2-3

G. Kneppe, U. Piaszenski, F. S. Köhler, F. Rangan, J. Bournel et al., Sirotti Accepted Phys. Rev. B Surface reactions of 3-butenenitrile on the Si(001)-2×1 surface at room temperature

G. Kneppe, U. Piaszenski, and F. Köhler, Sirotti Submitted Communications Allylcyanide adsorption on a Si(100)-2×1 surface studied by synchrotron electron spectroscopies and STM IVC 16 Conference, 2004.

Z. Lin, T. Strother, W. Cai, X. Cao, L. M. Smith et al., DNA Attachment and Hybridization at the Silicon (100) Surface, Langmuir, vol.18, issue.3, p.788, 2002.
DOI : 10.1021/la010892w

M. F. Crommie, C. P. Lutz, and D. M. Eigler, Confinement of Electrons to Quantum Corrals on a Metal Surface, Science, vol.262, issue.5131, p.218, 1993.
DOI : 10.1126/science.262.5131.218

J. Cho and L. Kleinman, First-principles study of the adsorption and reaction of cyclopentene on Ge(001), Physical Review B, vol.67, issue.11, p.115314, 2003.
DOI : 10.1103/PhysRevB.67.115314

W. A. Hofer, A. J. Fisher, G. P. Lopinski, and R. A. Wolkow, Electronic structure and STM images of self-assembled styrene lines on a Si(100) surface, Chemical Physics Letters, vol.365, issue.1-2, p.129, 2002.
DOI : 10.1016/S0009-2614(02)01406-9

J. Yoshinobu, H. Tsuda, M. Onchi, and M. Nishijima, (4??2), Si(100)(2??1), and vicinal Si(100) 9??: Electron energy loss spectroscopy and low???energy electron diffraction studies, The Journal of Chemical Physics, vol.87, issue.12, p.7332, 1987.
DOI : 10.1063/1.453327

F. Rochet, F. Jolly, F. Bournel, G. Dufour, F. Sirotti et al., ???X-ray photoemission spectroscopy with synchrotron radiation, Physical Review B, vol.58, issue.16, p.11029, 1998.
DOI : 10.1103/PhysRevB.58.11029

R. Miotto, A. C. Ferraz, and G. P. Srivastava, Acetylene adsorption on the Si(001) surface, Physical Review B, vol.65, issue.7, pp.75401-75402, 2002.
DOI : 10.1103/PhysRevB.65.075401

J. Bardeen, Tunnelling from a Many-Particle Point of View, Physical Review Letters, vol.6, issue.2, p.57, 1961.
DOI : 10.1103/PhysRevLett.6.57

W. A. Hofer and J. Redinger, Scanning tunneling microscopy of binary alloys: first principles calculation of the current for PtX (100) surfaces., Surface Science, vol.447, issue.1-3, p.51, 2000.
DOI : 10.1016/S0039-6028(99)01053-5

H. Ness, W. A. Hofer, and G. A. , Tip-induced surface polarization: a new mechanism for contrast in the scanning tunnelling microscope, Surface Science, vol.380, issue.1, p.479, 1997.
DOI : 10.1016/S0039-6028(97)00003-4

C. J. Cramer, Essential of Computational chemistry, 2002.

L. Triguero, O. Plashkevych, L. G. Pettersson, and H. Agren, Separate state vs. transition state Kohn-Sham calculations of X-ray photoelectron binding energies and chemical shifts, Journal of Electron Spectroscopy and Related Phenomena, vol.104, issue.1-3, p.195, 1999.
DOI : 10.1016/S0368-2048(99)00008-0

L. Triguero, L. G. Pettersson, and H. Agren, Calculations of near-edge x-ray-absorption spectra of gas-phase and chemisorbed molecules by means of density-functional and transition-potential theory, Physical Review B, vol.58, issue.12, p.8097, 1998.
DOI : 10.1103/PhysRevB.58.8097

M. Nyberg, Y. Luo, L. Triguero, L. G. Pettersson, and H. Agren, Core-hole effects in x-ray-absorption spectra of fullerenes, Physical Review B, vol.60, issue.11, p.7956, 1999.
DOI : 10.1103/PhysRevB.60.7956

T. Ziegler, A. Rauk, and E. J. Baerends, On the calculation of multiplet energies by the hartree-fock-slater method, Theoretica Chimica Acta, vol.2, issue.3, p.261, 1977.
DOI : 10.1007/BF00551551

P. W. Langhoff, Stieltjes imaging of atomic and molecular photoabsorption profiles, Chemical Physics Letters, vol.22, issue.1, p.60, 1973.
DOI : 10.1016/0009-2614(73)80534-2

J. Shoemaker, L. W. Burggraf, and M. S. Gordon, cluster study of the structure of the Si(001) surface, The Journal of Chemical Physics, vol.112, issue.6, p.2994, 2000.
DOI : 10.1063/1.480930

R. E. Schlier and . Farnsworth, Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon, The Journal of Chemical Physics, vol.30, issue.4, p.917, 1959.
DOI : 10.1063/1.1730126

M. C. Desjonquéres and D. Spanjaard, Concepts in surface physics, 1993.

R. J. Hamers, R. M. Tromp, and J. E. Demuth, Scanning tunneling microscopy of Si(001), Physical Review B, vol.34, issue.8, p.5343, 1986.
DOI : 10.1103/PhysRevB.34.5343

T. Yokoyama and K. Takayanagi, Anomalous flipping motions of buckled dimers on the Si(001) surface at 5 K, Physical Review B, vol.61, issue.8, p.5078, 2000.
DOI : 10.1103/PhysRevB.61.R5078

M. Ono, A. Kamoshida, N. Matsuura, E. Ishikawa, T. Egushi et al., Dimer buckling of the Si(001)2??1 surface below 10 K observed by low-temperature scanning tunneling microscopy, Physical Review B, vol.67, issue.20, p.201306, 2003.
DOI : 10.1103/PhysRevB.67.201306

T. Uda, H. Shigekawa, Y. Sugawara, S. Mizuno, H. Tochihara et al., Ground state of the Si(001) surface revisited?is seeing believing?, Progress in Surface Science, vol.76, issue.6-8, p.147, 2004.
DOI : 10.1016/j.progsurf.2004.05.015

T. Uzomi, Y. Tomiyoshi, N. Suehira, Y. Sugawara, and S. Morita, Observation of Si(100) surface with noncontact atomic force microscope at 5K, Applied Surface Science, vol.188, issue.3-4, p.279, 2002.
DOI : 10.1016/S0169-4332(01)00939-4

M. Matsumoto, K. Fukutani, and T. Okano, Low-Energy Electron Diffraction Study of the Phase Transition of Si(001) Surface below 40??K, Physical Review Letters, vol.90, issue.10, pp.106103-106104, 2003.
DOI : 10.1103/PhysRevLett.90.106103

M. S. Gordon, J. Shoemaker, and L. W. Burggraf, , 9353 (2000)], The Journal of Chemical Physics, vol.113, issue.20, p.9355, 2000.
DOI : 10.1063/1.1320059

J. S. Hess and D. J. Doren, , 2994 (2000)], The Journal of Chemical Physics, vol.113, issue.20, p.9353, 2000.
DOI : 10.1063/1.1320058

G. S. Hwang, A channel for dimer flipping on the Si(001) surface, Surface Science, vol.465, issue.3, p.789, 2000.
DOI : 10.1016/S0039-6028(00)00757-3

Y. Widjaja and C. B. Musgrave, Indirect adsorbate???adsorbate interactions mediated through the surface electronic structure of the Si(100) surface, The Journal of Chemical Physics, vol.120, issue.3, p.1555, 2003.
DOI : 10.1063/1.1631932

C. Fu, M. Weissmann, and A. Saul, Molecular dynamics study of dimer flipping on perfect and defective Si() surfaces, Surface Science, vol.494, issue.2, p.119, 2001.
DOI : 10.1016/S0039-6028(01)01451-0

D. E. Aspnes and J. Ihm, Biatomic Steps on (001) Silicon Surfaces, Physical Review Letters, vol.57, issue.24, p.3054, 1986.
DOI : 10.1103/PhysRevLett.57.3054

N. C. Bartelt, E. D. Williams, R. J. Phaneuf, Y. Yang, and S. Sarma, Orientational stability of silicon surfaces, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.7, issue.3, p.1898, 1989.
DOI : 10.1116/1.576025

R. Kaplan, LEED study of the stepped surface of vicinal Si (100), Surface Science, vol.93, issue.1, p.145, 1980.
DOI : 10.1016/0039-6028(80)90052-7

D. Aberdam, Adsorption et adhésion, 1983.

F. J. Himpsel, G. Hollinger, and R. A. Pollack, Determination of the Fermi-level pinning position at Si(111) surfaces, Physical Review B, vol.28, issue.12, p.7014, 1983.
DOI : 10.1103/PhysRevB.28.7014

F. J. Himpsel and T. Fauster, Probing valence states with photoemission and inverse photoemission, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.2, issue.2, p.815, 1984.
DOI : 10.1116/1.572514

R. J. Hamers, R. M. Tromp, and J. E. , Electronic and geometric structure of Si(111)-(7 ?? 7) and Si(001) surfaces, Surface Science, vol.181, issue.1-2, p.346, 1987.
DOI : 10.1016/0039-6028(87)90176-2

Y. Okamoto, molecules, Physical Review B, vol.60, issue.15, p.10632, 1999.
DOI : 10.1103/PhysRevB.60.10632

F. Jolly, F. Rochet, G. Dufour, C. Grupp, and A. Taleb-ibrahimi, Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation, Journal of Non-Crystalline Solids, vol.280, issue.1-3, p.150, 2001.
DOI : 10.1016/S0022-3093(00)00370-7

M. A. Filler and S. F. Bent, The surface as molecular reagent: organic chemistry at the semiconductor interface, Progress in Surface Science, vol.73, issue.1-3, 2003.
DOI : 10.1016/S0079-6816(03)00035-2

H. Liu and R. Hoffmann, The Bare and Acetylene Chemisorbed Si(001) Surface, and the Mechanism of Acetylene Chemisorption, Journal of the American Chemical Society, vol.117, issue.14, p.4082, 1995.
DOI : 10.1021/ja00119a024

G. P. Lopinski, D. J. Moffatt, D. D. Wayner, and R. A. Wolkow, How Stereoselective Are Alkene Addition Reactions on Si(100)?, Journal of the American Chemical Society, vol.122, issue.14, p.3548, 2000.
DOI : 10.1021/ja993110i

G. T. Wang, C. Mui, C. B. Musgrave, and S. F. Bent, Example of a Thermodynamically Controlled Reaction on a Semiconductor Surface:?? Acetone on Ge(100)-2 ?? 1, The Journal of Physical Chemistry B, vol.105, issue.50, p.12559, 2001.
DOI : 10.1021/jp013058o

. Dans-la-molécule-ch-3-c?n and . Le-don, une pseudo orbitale ? du groupe méthyì a la triple liaison ? affaiblit la liaison, J. Phys. Chem

F. Tao, Z. H. Wang, M. H. Qiao, Q. Liu, W. S. Sim et al., Covalent attachment of acetonitrile on Si(100) through Si???C and Si???N linkages, The Journal of Chemical Physics, vol.115, issue.18, p.8563, 2001.
DOI : 10.1063/1.1410388

F. Bournel, J. Gallet, S. Kubsky, G. Dufour, F. Rochet et al., Adsorption of acetonitrile and acrylonitrile on Si()-2??1 at room temperature studied by synchrotron radiation photoemission and NEXAFS spectroscopies, Surface Science, vol.513, issue.1, p.37, 2002.
DOI : 10.1016/S0039-6028(02)01773-9

J. H. Cho and L. Kleinman, Adsorption kinetics of acetylene and ethylene on Si(001), Physical Review B, vol.69, issue.7, p.75303, 2004.
DOI : 10.1103/PhysRevB.69.075303

C. Mui, S. Filler, and . Bent, Reactions of Nitriles at Semiconductor Surfaces, The Journal of Physical Chemistry B, vol.107, issue.44, p.12256, 2003.
DOI : 10.1021/jp034864t

R. Miotto, M. C. Oliveira, M. M. Pinto, F. De-león-pérez, and A. C. Ferraz, Acetonitrile adsorption on Si(001), Physical Review B, vol.69, issue.23, p.235331, 2004.
DOI : 10.1103/PhysRevB.69.235331

W. Kutzelnig, U. Fleisher, and M. Schindler, Chemical Shifts and Magnetic Susceptibilities, 1990.

C. Mui, G. T. Wang, S. F. Bent, and C. B. Musgrave, Reactions of methylamines at the Si(100)-2??1 surface, The Journal of Chemical Physics, vol.114, issue.22, p.10170, 2001.
DOI : 10.1063/1.1370056

X. Cao and R. J. Hamers, Interactions of alkylamines with the silicon (001) surface, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.20, issue.4, p.1614, 2002.
DOI : 10.1116/1.1490381

F. J. Himpsel, B. S. Meyerson, F. R. Mcfeely, J. F. Morar, A. Taleb-ibrahimi et al., Core-level spectroscopy at silicon surfaces and interfaces, Proceedings of the Enrico Fermi School on photoemission and Photoabsorption Spectroscopy of Solids and Interfaces with Synchrotron Radiation, p.203, 1990.

J. Stöhr, NEXAFS spectroscopy p.225-238, 1992.

|. Mbv-mbc|, La distance enénergie enénergie | N 1s -Si 2p 3/2 | est mesurée expérimentalement, | Si 2p 3/2 -MBV| estégaìestégaì a 98, |MBV-MBC| est le gap du silicium, p.70143008, 1996.

F. J. Himpsel, G. Hollinger, and R. A. Pollak, Determination of the Fermi-level pinning position at Si(111) surfaces, Physical Review B, vol.28, issue.12, p.7014, 1996.
DOI : 10.1103/PhysRevB.28.7014

L. Ley, Near-surface dopant passivation after wet-chemical preparation, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.14, issue.4, p.3008, 1996.
DOI : 10.1116/1.589056

P. A. Bruhwiler, O. Karis, and N. , Charge-transfer dynamics studied using resonant core spectroscopies, Reviews of Modern Physics, vol.74, issue.3, p.703, 2002.
DOI : 10.1103/RevModPhys.74.703

F. Tao, Z. H. Wang, and G. Xu, Formation of a Benzoimine-like Conjugated Structure through the Adsorption of Benzonitrile on Si(100), The Journal of Physical Chemistry B, vol.106, issue.14, p.3557, 2002.
DOI : 10.1021/jp012703o

W. A. Hofer, A. J. Fisher, G. P. Lopinski, and R. A. Wolkow, methods, Physical Review B, vol.63, issue.8, p.85314, 2001.
DOI : 10.1103/PhysRevB.63.085314

URL : https://hal.archives-ouvertes.fr/in2p3-00003711

N. Witkowski, F. Hennies, A. Pietzsch, S. Mattsson, A. Föhlisch et al., Polarization and angle-resolved NEXAFS of benzene adsorbed on oriented single-domain Si(001)-2??1 surfaces, Physical Review B, vol.68, issue.11, p.115408, 2003.
DOI : 10.1103/PhysRevB.68.115408

URL : https://hal.archives-ouvertes.fr/hal-00002785

J. J. Gallet, F. Bournel, S. Kubsky, G. Dufour, and F. Rochet, Resonant Auger spectroscopy of solid acrylonitrile at the N K-edge, Journal of Electron Spectroscopy and Related Phenomena, vol.122, issue.3, p.285, 2002.
DOI : 10.1016/S0368-2048(01)00366-8

F. Tao, X. Feng-chen, Z. H. Wang, and G. Xu, Selective Formation of Cumulative Double Bonds (CCN) in the Attachment of Multifunctional Molecules on Si(111)-7 ?? 7, Journal of the American Chemical Society, vol.124, issue.24, p.7170, 2002.
DOI : 10.1021/ja012563w

F. Tao, W. S. Sim, G. Q. Xu, and M. H. Qiao, Selective Binding of the Cyano Group in Acrylonitrile Adsorption on Si(100)-2 ?? 1, Journal of the American Chemical Society, vol.123, issue.38, p.9397, 2002.
DOI : 10.1021/ja010574j

M. P. Schwartz and R. J. Hamers, The role of Pi-conjugation in attachment of organic molecules to the silicon (001) surface, Surface Science, vol.515, issue.1, p.75, 2002.
DOI : 10.1016/S0039-6028(02)01807-1

M. Cobian, V. Ilakovac, S. Carniato, N. Capron, G. Boureau et al., Density-functional study of the cycloaddition of acrylonitrile on the Si(100) surface, The Journal of Chemical Physics, vol.120, issue.20, p.9793, 2004.
DOI : 10.1063/1.1712969

J. H. Cho and L. Kleinman, Theoretical study of the reaction of acrylonitrile on Si(001), The Journal of Chemical Physics, vol.121, issue.3, p.1557, 2004.
DOI : 10.1063/1.1763835

A. A. Stekolnikov, J. Furthmüller, and F. Bechstedt, Absolute surface energies of group-IV semiconductors: Dependence on orientation and reconstruction, Physical Review B, vol.65, issue.11, p.115318, 2002.
DOI : 10.1103/PhysRevB.65.115318

S. H. Schei, 3-Butenenitrile (allylcyanide): Molecular structure and conformation in the gas phase as determined by electron diffraction, Journal of Molecular Structure, vol.98, issue.1-2, p.141, 1983.
DOI : 10.1016/0022-2860(83)90014-5

F. Bournel, F. Jolly, F. Rochet, G. Dufour, F. Sirotti et al., with synchrotron radiation, Physical Review B, vol.62, issue.11, p.7645, 2000.
DOI : 10.1103/PhysRevB.62.7645

M. P. Schwartz and R. J. Hamers, The role of Pi-conjugation in attachment of organic molecules to the silicon (001) surface, Surface Science, vol.515, issue.1, p.75, 2002.
DOI : 10.1016/S0039-6028(02)01807-1

F. Stacey and . Bent, Organic functionalization of group iv semiconductor surfaces: principles, examples, applications, and prospects, Surf. Sci, vol.500, p.879, 2002.

F. Stacey and . Bent, Attaching organic layers to semiconductor surfaces, J. Phys. Chem. B, vol.106, p.2830, 2002.

D. F. Ogletree, H. Bluhm, G. Lebedev, and C. S. , A differentially pumped electrostatic lens system for photoemission studies in the millibar range, Review of Scientific Instruments, vol.73, issue.11, p.3872, 2002.
DOI : 10.1063/1.1512336

H. Bluhm, D. Frank-ogletree, C. S. Fadley, Z. Hussain, and M. Salmeron, The premelting of ice studied with photoelectron spectroscopy, Journal of Physics: Condensed Matter, vol.14, issue.8, p.227, 2003.
DOI : 10.1088/0953-8984/14/8/108