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Synthétiseurs de fréquence monolithiques micro-ondes à 10 et 20 GHz en technologies BiCMOS SiGe 0,25 et 0,35 um

Abstract : Nowadays, the development of Silicium/Germanium BiCMOS technologies permits the low-cost integration of complete RF systems onto a single chip. Bipolar transistors of these processes are effectively capable of attaining transition frequencies in the order of tens of GHz, thus insuring the realization of RF domain functions such as amplification, mixing, digital and analog frequency division, digital and analog phase/frequency comparison, etc. In addition, the compatibility of these technologies with existing CMOS technologies allows integration with base band digital (or analog) signal processing. A difficult challenge arises when reconsidering designs of existing architectures to compensate for the relatively poor performance of integrated passive components. One solution consists of digitizing as many functions as possible. The aim of this thesis is to study the feasability of X and K band frequency synthesizers based on a PLL entirely integrated in SiGe technologies. In particular, this work focuses on the digitization of frequency dividers and phase/frequency detectors used in PLLs, while maintaining an analog VCO. Innovative design solutions are proposed to increase the operating frequency while reducing inherent parasitics in commonly used structures. This thesis concludes with the integration of divider and comparator designs with VCO, designed in a previous thesis, to form two frequency synthesizers, one operating at 10 GHz and an other at 20 GHz.
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Submitted on : Wednesday, September 21, 2005 - 3:59:18 PM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM
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  • HAL Id : tel-00010235, version 1


Mathilde Sié. Synthétiseurs de fréquence monolithiques micro-ondes à 10 et 20 GHz en technologies BiCMOS SiGe 0,25 et 0,35 um. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2004. Français. ⟨tel-00010235⟩



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