H. Kroemer, A proposed class of heterojunction lasers, IEEE, p.17821783, 1963.

. I. Zh, R. F. Alferov, and . Kazarinov, Semiconductor laser with electrical pumping, 1963.

G. Bastard, Wave mechanics applied to semiconductor heterostructure. Les Éditions de Physique, 1988.
DOI : 10.1063/1.2809545

M. Altarelli, Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices, Physical Review B, vol.28, issue.2, 1983.
DOI : 10.1103/PhysRevB.28.842

M. Asada, A. Kameyama, and Y. Suematsu, Gain and intervalence band absorption in quantum-well lasers, IEEE Journal of Quantum Electronics, vol.20, issue.7, p.20, 1984.
DOI : 10.1109/JQE.1984.1072464

U. Eckenberg and M. Altarelli, Calculation of hole subbands at the GaAs-Al x Ga 1?x As interface, Physical Review B, vol.30, issue.6, 1984.

D. A. Broido and L. J. Sham, Eective masses of holes at GaAs-AlGaAs heterojunctions, Physical Review B, vol.31, issue.2, 1985.

T. Ando, Hole Subband at GaAs/AlGaAs Heterojunctions and Quantum Wells, Journal of the Physical Society of Japan, vol.54, issue.4, 1985.
DOI : 10.1143/JPSJ.54.1528

L. C. Andreani, A. Pasquarello, and F. Bassani, Hole subbands in strained GaAs- Ga 1?x Al x As quantum wells : Exact solution of the eective-mass equation, Physical Review B, issue.11, p.36, 1987.

S. L. Chuang, Physics of optoelectronic devices Wiley series in Pure and Applied optics, 1995.

G. Bastard and J. A. Brum, Electronic states in semiconductor heterostructures, IEEE Journal of Quantum Electronics, vol.22, issue.9, 1986.

C. S. Chang and S. L. Chuang, Modeling od strained quantum-well lasers with spin-orbit coupling, IEEE Journal of Selected Topics in Quantum Electronics, vol.1, issue.2, 1995.

F. Seitz, Théorie moderne des solides, 1949.

J. R. Chelikowsky and M. L. Cohen, Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors, Physical Review B, vol.14, issue.2, p.556582, 1976.
DOI : 10.1103/PhysRevB.14.556

E. O. Kane, Band structure of indium antimonide, Journal of Physics and Chemistry of Solids, vol.1, issue.4, p.249261, 1957.
DOI : 10.1016/0022-3697(57)90013-6

J. M. Luttinger and W. Kohn, Motion of electrons and holes in perturbed periodic elds, Physical Review, vol.97, issue.4, p.869883, 1955.

G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Eects in Semiconductors, 1974.

C. Y. Chao and S. L. Chuang, Spin-orbit-coupling eects on the valence-band structure of strained semiconductor quantum wells, Physical Review B, vol.46, issue.7, p.41104122, 1992.

L. Euler, Institutiones Calculi Integralis St Petersbourg, 1768. Leonhardi Euleri Opera Omnia, série I, volume XI, p.424, 1913.

. Ames, Numerical methods for partial dierential equations, 1977.

S. L. Chuang, Ecient band-structure calculations of strained quantum wells, Physical Review B, vol.43, issue.12, 1991.

D. Gershoni, C. H. Henry, and G. A. Baraff, Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers, IEEE Journal of Quantum Electronics, vol.29, issue.9
DOI : 10.1109/3.247701

C. A. Fletcher, Computational Galerkin Methods, 1984.

G. Debaisieux, G. Herve-gruyer, M. Filoche, S. Bouchoule, and J. F. Palmier, Selfconsistent 1-D solution of multiquantum-well laser equations, Optical and Electronics, vol.29, 1997.

N. Trenado and J. F. Palmier, An ecient and accurate method for gain spectrum calculation in non-identical multi-quantum-well, IEEE Journal of Quantum Electronics, vol.38, issue.5, p.495499, 2002.

L. Landau and E. Lifchitz, Mécanique quantique, Éditions MIR, 1966.

M. J. Adams, J. V. Collins, and I. D. Henning, Analysis of semiconductor laser optical ampliers, IEE Proceedings Part J, p.5863, 1985.

P. G. Elissev, Line shape function for semiconductor laser modelling, Electronics Letters, vol.33, issue.24, p.20462048, 1997.
DOI : 10.1049/el:19971385

Y. C. Chang and R. B. James, -type semiconductor quantum wells, Physical Review B, vol.39, issue.17, p.1267212681, 1989.
DOI : 10.1103/PhysRevB.39.12672
URL : https://hal.archives-ouvertes.fr/hal-01060357

T. Cho, H. Kim, Y. Kwon, and S. Hong, Theoritical study on intervalence band absorption in inp-based quantum well laser structures, Applied Physics Letters, issue.16, p.6821832185, 1996.

C. Cohen-tannoudji, B. Diu, and E. F. Laloë, Mécanique quantique, 1977.

L. Landau and E. Lifchitz, Électrodynamique des milieux continus, Éditions MIR, vol.7, 1969.

C. H. Henry, Theory of spontaneous emission noise in open resonators and its application to lasers and optical ampliers, IEEE Journal of Lightwave Technology, vol.4, p.229288, 1986.

. Tamir, Guided-wave optoelectronics, 1988.

C. Vassallo, Électromagnétisme classique dans la matière, 1980.

P. Brosson, Analytical Model of a Semiconductor Optical Amplier, IEEE Journal of Lightwave Technology, vol.12, issue.1, p.4954, 1994.

J. F. Palmier, P. Brosson, B. Dagens, and J. Y. Emery, A self-consistent numerical modeling of gain and amplied spontaneous emission in semiconductor optical ampliers, Proceedings ECIO'01, p.395398, 2001.

M. Bernard and G. Duraffourg, Laser conditions in semiconductors, Physica Status Solidi, 1961.

M. Asada, Handbook of Semiconductor lasers, chapter 5, 1992.

M. Asada, A. R. Adams, K. Stubkjaer, Y. Suematsu, Y. Itaya et al., The Temperature Dependency of the Threshold Current of GaInAsP/InP DH Lasers, IEEE Journal of Quantum Electronics, issue.5, p.17611619, 1981.

B. Stroustrup, The C++ Programming Language, 1974.

S. Adachi, Material parameters of In 1?x Ga x As y P 1?y and related binaries, Journal of Applied Physics, vol.53, issue.12, p.87758792, 1982.

J. C. Bouley, J. Charil, and G. Chaminant, 1.55 µmn strip buried schottky laser, 9th IEEE International Semiconductor Laser Conference, p.5455, 1984.
URL : https://hal.archives-ouvertes.fr/jpa-00227969

Y. Suzaki, High-Coupling Eciency of a 1.3-µm Spot-Size Converter Integrated Laser Diode with pn-Buried Heterostructure for High-Temperature Operation, IEEE Journal of Lightwave Technology, issue.8, p.1516021607, 1997.

B. W. Hakki and T. L. Paoli, CW degradation at 300 ? K of GaAs double-heterostructure junction lasers. II. electronic gain, Journal of Applied Physics, vol.44, issue.9, p.41134119, 1973.

H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LEDs, 1977.

M. Filoche and G. Hervé-gruyer, ALCOR v2.4 users' guide