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Modélisation et simulation des composants optoélectroniques à puits quantiques

Abstract : The main goal of this work is the implementation of a new method to calculate bound states in multiquantum well devices. It focuses on the improvement of simulation tools and therefore helps the design of optoelectronic devices prior to their fabrication. We describe the physical model used as well as the classical methods usually employed for this calculation. Compared to first order finite element approach, our method deals correctly with borderline cases like coupling of identical wells or valence bands calculation of large wells and is also advantageous in terms of computational time. The aim of this calculation is the material gain evaluation that is the basis for device simulation. Our new module completes the BCBV simulator of which we will describe the main models such as that of drift-diffusion and electro-optic coupling in the semi-classical approach. However, the quantum wells can require a density matrix approach to take into account transport phenomena more precisely. Finally, we try to compare simulation results with experimental measurements taken from Fabry-Perot lasers.
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Contributor : Nicolas Trenado <>
Submitted on : Tuesday, September 20, 2005 - 3:10:41 PM
Last modification on : Saturday, October 12, 2019 - 1:15:02 AM
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  • HAL Id : tel-00010221, version 1


Nicolas Trenado. Modélisation et simulation des composants optoélectroniques à puits quantiques. Physique [physics]. Université de Rouen, 2002. Français. ⟨tel-00010221⟩



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