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Conditions optimales de fonctionnement pour la fiabilité des transistors à effet de champ micro-ondes de puissance

Abstract : The main frame of this thesis is related to the reliability of Gallium Arsenide Monolithic Microwave Integrated Circuits (MMIC) for power amplifiers. The aim of this work is the determination of meaningful derating rules (in terms of temperature, current, voltage, power) applied on microwave circuits. The first section covers field effect transistor reliability rules. A summery of the mains degradation mechanism is GaAs FET are presented. The second section addresses a methodology for the evaluation of MMIC reliability based on test vehicles definition (Technological Characterisation Vehicle and Dynamic Evaluation Circuit) and the well suited life test conditions. The reliability of the MMIC technology is evaluated by high storage temperature and DC life test results. The power amplifier application is then validated through life test under dynamic electrical stress. The degradation mechanism activated under power amplifier application is analysed in term of impact ionisation processes. Finally, we present a methodology based on short duration life test corroborated with non linear simulation in order to include MMIC power amplifier reliability during design phase.
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https://tel.archives-ouvertes.fr/tel-00010072
Contributor : Emilie Marchand <>
Submitted on : Thursday, September 8, 2005 - 2:49:38 PM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM
Long-term archiving on: : Tuesday, September 7, 2010 - 5:22:40 PM

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  • HAL Id : tel-00010072, version 1

Citation

Jean-Luc Muraro. Conditions optimales de fonctionnement pour la fiabilité des transistors à effet de champ micro-ondes de puissance. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 1997. Français. ⟨tel-00010072⟩

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