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Structural investigation of silicon after ion-implantation using combined x-ray scattering methods.

Abstract : Ultra-low energy (< 5keV) ion implantation in silicon is used industrially in manufacturing complementary metal-oxide semiconductor devices. The unavoidable defects present in Si after ion implantation and annealing play a crucial role for the device performance. Therefore, the structural characterisation of such defects is of great relevance. In this work, it will be shown that the combination of different x-ray scattering methods represents an ideal non-destructive tool to achieve this task. X-ray diffraction reveals the depth distribution of the lattice strain and specular reflectivity provides the electron density profile. Grazing incidence diffuse x-ray scattering (GI-DXS) is sensitive to point and extended defects, with depth resolution. The low intensity of the diffuse signal arising from such defects requires the high brilliance of synchrotron radiation. GI-DXS is especially well suited to investigate the “end-of-range” defects.
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https://tel.archives-ouvertes.fr/tel-00009791
Contributor : Luciana Capello <>
Submitted on : Thursday, July 28, 2005 - 12:05:48 PM
Last modification on : Thursday, October 15, 2020 - 9:00:03 AM
Long-term archiving on: : Friday, April 2, 2010 - 10:08:11 PM

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  • HAL Id : tel-00009791, version 1

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Luciana Capello. Structural investigation of silicon after ion-implantation using combined x-ray scattering methods.. Condensed Matter [cond-mat]. Université Claude Bernard - Lyon I, 2005. English. ⟨tel-00009791⟩

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