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Procédé laser de réalisation de jonctions ultra-minces pour la microélectronique silicium: étude expérimentale, modélisation et tests de faisabilité

Abstract : Semiconductor doping is a critical step for futures CMOS technologies and is intensively study. The reduction of MOS transistor requires techniques able to realize ultra-shallow and highly doped junctions with abrupt profile. This job is focus on study of laser annealing techniques for realization and integration of thin doped film for source/drain extension in process microelectronics flow for CMOS devices. During this work, we used two experimental setup with two excimer lasers with very different temporal characteristics: an industrial laser tool, VEL 15 XeCl (15J, 200ns) developed by SOPRA, and a more conventional laser, Lambda Physik XeCl (200mJ, 20ns). After the presentation of the state of the art for the realization of doped junctions, the experimental optical devices used in this work were described in detail and physical phenomena during laser irradiation. Thermal modelling was done and was in good agreement with many characterizations carried out. Then the integration of the laser process to other MOSFET manufacturing technologies was studied and tested. This study shows the possibility to obtain functional transistors using laser process for the realization of ultra-shallow junctions in the realization of CMOS transistors.
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https://tel.archives-ouvertes.fr/tel-00009586
Contributor : Miguel Hernandez <>
Submitted on : Friday, June 24, 2005 - 11:36:02 AM
Last modification on : Friday, October 23, 2020 - 4:41:11 PM
Long-term archiving on: : Friday, April 2, 2010 - 10:40:36 PM

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Miguel Hernandez. Procédé laser de réalisation de jonctions ultra-minces pour la microélectronique silicium: étude expérimentale, modélisation et tests de faisabilité. Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2005. Français. ⟨tel-00009586⟩

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