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Contribution à l'étude expérimentale et à la simulation de la diffusion anormale du Bore dans le Silicium

Abstract : This work of thesis is dedicated to the study of the Transient Enhanced Diffusion (TED) of boron in silicon. This phenomenon is a major problem for the realisation of ultra-shallow junctions for future silicon technologies (junction depths lower than 20nm). These junctions are made by Ion Implantation followed by annealing. In these conditions, the boron atoms diffuse in a transient and enhanced way (some million times to some hundred times faster than in equilibrium). At the same time, several types of extended defects form and evolve during the annealing. In the first part of this thesis, we investigate the strong relationship, during the annealing, between the TED evolution and the extended defects evolution (interstitial clusters, (311) defects and dislocation loops). Actually, depending on thevarious experimental conditions of Ion Implantation (amorphizing or non-amorphizing implantations) and of annealing, the extended defects evolve in a different way but always following an "Ostwald ripening” mechanism. They evolve by exchanging Si interstitial atoms, which are the main responsible for the enhanced diffusion. Therefore, we were able to interpret and to understand the TED evolution according to the experimental parameters. In this way, we have shown that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si interstitials supersaturation gradient between the defect region and the surface. In the second part of this thesis, we used all the experimental results to improve and optimize a physical model allowing the prediction of the TED time-evolution as well as the formation and growth of the extended defects. This model takes into account the Ostwald ripening mechanism and the interaction of the defects with the surface. Finally, we used the optimized model for TED predictive simulations and for other applications which allowed us to understand some physical phenomena that take place in experimental conditions of technological interest.
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Submitted on : Wednesday, June 22, 2005 - 4:18:11 PM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM
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  • HAL Id : tel-00009567, version 1

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Younes Lamrani. Contribution à l'étude expérimentale et à la simulation de la diffusion anormale du Bore dans le Silicium. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2005. Français. ⟨tel-00009567⟩

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