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Influence de la température sur le comportement statique et dynamique des capteurs de pression capacitifs au silicium

Abstract : This memory treats of the study of the thermal behavior of silicon capacitive pressure sensors manufactured based on silicon/glass technology. Their static and dynamic behavior is studied for various designs. In the first chapter, the theory models are developed for sensors with circular diaphragm. In static mode, the models (pressure and tension sensitivities) are clarified in the linear field. In dynamic mode, the dependence of resonance frequency is studied with respect to the pressure and the applied tension. The thermal coefficient has been calculated for all the set of models. The second chapter describes the geometry of the sensor under study, the used technology as well as the test platform. The characterization of the static behavior with respect to the temperature is studied in the third chapter. It has been found that the thermal coefficient of the capacitance at rest is almost constant and independent of the bonded area width. On the other hand, this thermal coefficient is dependent on the diaphragm thickness, the fixed metal plate thickness and the embedding form. The thermal coefficient of the tension sensitivity and the pressure sensitivity varies in quasi-linear manner between -20°C and +150°C. The characterization of the dynamic behavior with respect to the temperature is studied in the fourth chapter. We have found that the thermal coefficient of the resonance frequency varies linearly between -20°C and +150°C. It appeared that the width of bonded area as the thickness of the fixed metal plate does not influence the thermal coefficient of the resonance frequency. This latter depends much more on the thickness of the diaphragm than on the embedding form, which the influence is minor. A comparison between the two models of the thermal coefficient of pressure sensitivity was carried out on a large number of sensors. It validates these two models and demonstrates that the pressure sensitivity depends on the resonance frequency.
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Submitted on : Friday, June 17, 2005 - 3:22:50 PM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM
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  • HAL Id : tel-00009524, version 1

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Mohamad Al Bahri. Influence de la température sur le comportement statique et dynamique des capteurs de pression capacitifs au silicium. Micro et nanotechnologies/Microélectronique. INSA de Toulouse, 2005. Français. ⟨tel-00009524⟩

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