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Modélisation et caractérisation de transistors MOS appliquées à l'étude de la programmation et du vieillissement de l'oxyde tunnel des mémoires EEPROM

Abstract : Non volatile memories hold 30% of the global volume of semiconductor memory market nowadays. The general trend is the manufacturing of mobile products capable of storing and giving back large amount of information quickly and necessitating a low power supply. This is the general frame of this thesis. This work investigates the ability to increase the programming speed of an EEPROM cell and to decrease its programming biases. We also study the modeling of the programming window closure versus the number of write/erase cycles in extracting Fowler-Nordheim parameters α and β from equivalent capacitors undergoing dynamic stress. The simulations are carried out with an EEPROM cell physical compact model based on the calculation of the surface potential and the floating gate potential. This model takes into account the non-linearity of the tunnel area capacitance due to depletion within the polysilicon floating gate. We demonstrate that the programming time of an EEPROM cell can be decreased down to 10µs while keeping an endurance greater than 50000 write/erase cycles. Moreover, the programming biases of the cell can be divided by two in splitting them between the control gate and the drain. This implies the use of negative biases. Finally, the emulation of EEPROM cell tunnel oxide degradation on equivalent capacitors shows a sharper programming window closure than the one measured on an EEPROM cell. This sharper closure has been attributed to additional tunnel oxide degradation due to Fowler-Nordheim current measurements for the purpose of extracting Fowler-Nordheim parameters.
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https://tel.archives-ouvertes.fr/tel-00009378
Contributor : Juliano Razafindramora <>
Submitted on : Friday, June 3, 2005 - 2:56:10 PM
Last modification on : Thursday, March 15, 2018 - 4:56:03 PM
Long-term archiving on: : Friday, April 2, 2010 - 9:27:41 PM

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Juliano Razafindramora. Modélisation et caractérisation de transistors MOS appliquées à l'étude de la programmation et du vieillissement de l'oxyde tunnel des mémoires EEPROM. Micro et nanotechnologies/Microélectronique. Université de Provence - Aix-Marseille I, 2004. Français. ⟨tel-00009378⟩

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