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Caracterisation et modelisation du bruit basse frequence des composants bipolaires et a effet de champ pour applications micro-ondes

Abstract : This thesis deals mainly with electrical noise in microwave silicon germanium (SiGe) and gallium nitride (GaN) field effect transistors (HEMT's) and SiGe heterojunction bipolar transistors (HBT's). The organisation of this memory is as follows, in first chapter, we remember the important properties of excess noise sources encountered in these type devices. In addition, we describe the measurement set-ups used for static and noise characterization. In the second and third chapters, a thoroughful analysis of the noise dependence on frequency, bias, and geometry of both SiGe and GaN HEMT's, has been carried out, specifically, the input and output current noise sources respectively iG and iD and their correlation. This in combination with static characterization, allowed to identify the different noise sources present in these devices and their supposed origin. The last chapter deals with noise SiGe HBT's. Firstly, the dependence of SiGe HBTs low frequency noise (LFN) versus bias, geometry, and germanium fraction (Ge fraction) has been established. Secondly, the large impact of thermal stress on SiGe HBT's LFN has been shown clearly.
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Submitted on : Tuesday, May 24, 2005 - 10:19:23 AM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM
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  • HAL Id : tel-00009299, version 1

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Abdelali Rennane. Caracterisation et modelisation du bruit basse frequence des composants bipolaires et a effet de champ pour applications micro-ondes. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2004. Français. ⟨tel-00009299⟩

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