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Gravure de la grille en silicium pour les filières CMOS sub-0,1 µm

Abstract : This work focuses on plasma patterning of sub-0.1 µm amorphous silicon gate for CMOS applications. We have performed this study in a high-density plasma Helicon source equipped with diagnostic tools allowing a real time monitoring of the etching process. First, we have developed a standard process based on HBr/O2 chemistry that is best adapted to ensure high selectivity to the thin gate oxide and provides anisotropic etching profiles. We have shown an unsuspected behavior of thin gate oxide (< 2 nm) exposed to the standard process. During the low-energy overetch step, both oxidation and amorphization of the bulk silicon take place leading to the increase of the gate oxide thickness. Different techniques of characterization have been used to fully understand this phenomenon. Second, XPS analyses have been extensively used to investigate the chemical composition of the sidewall passivation films in order to get a better understanding of the mechanism of their formation during the plasma patterning of the sub-0.1 µm silicon gates. These films are basically built up during the main etch step of the process and are bromine silicon oxide-like films. They get more dense as the overetch step proceeds thanks to the bromine substitution by oxygen atoms. We have also shown that the sidewall passivation films formation strongly depends on plasma operating conditions: chemistry, ions energy, the overetch step duration and the oxygen dilution. TEM observations have shown that the thickness of the sidewall passivation films decreases from the top to the bottom of the features.
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Contributor : Emmanuel Desvoivres <>
Submitted on : Friday, April 15, 2005 - 8:43:17 AM
Last modification on : Monday, October 19, 2020 - 10:54:48 AM
Long-term archiving on: : Friday, November 25, 2016 - 9:07:00 AM


  • HAL Id : tel-00009026, version 1


Latifa El Kortobi-Desvoivres. Gravure de la grille en silicium pour les filières CMOS sub-0,1 µm. Physique [physics]. Institut National Polytechnique de Grenoble - INPG, 2000. Français. ⟨tel-00009026⟩



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