F. Nagatsu, Y. Terashita, and . Koide, Low-Temperature Sterilization with Surface-Wave-Excited Oxygen Plasma, Japanese Journal of Applied Physics, vol.42, issue.Part 2, No. 7B, p.856, 2003.
DOI : 10.1143/JJAP.42.L856

C. Delachaux, F. Hollenstein, C. Lévy, and . Verdon, Nitriding of tetragonal zirconia in a high current d.c. plasma source, Thin Solid Films, vol.425, issue.1-2, p.113, 2003.
DOI : 10.1016/S0040-6090(02)01132-X

. Bohm, The Characteristics of Electrical Discharges in Magnetic Fields

A. Godyak, Soviet Radio Frequency Discharge Research, 1986.

A. Edelberg and E. S. , Modeling of the sheath and the energy distribution of ions bombarding rf-biased substrates in high density plasma reactors and comparison to experimental measurements, Journal of Applied Physics, vol.86, issue.9, p.4799, 1999.
DOI : 10.1063/1.371446

R. J. Burns and . Browne, ???2Cl Reaction, The Journal of Chemical Physics, vol.53, issue.8, p.3318, 1970.
DOI : 10.1063/1.1674484

P. E. Husain and . Norris, Kinetic study of reactions of ground state silicon atoms, Si[3p 2(3 P J )], by atomic absorption spectroscopy, Journal of the Chemical Society, Faraday Transactions 2, vol.74, p.106, 1978.
DOI : 10.1039/f29787400106

J. P. Cunge and . Booth, CF2 production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization, Journal of Applied Physics, vol.85, issue.8, p.3952, 1999.
DOI : 10.1063/1.370296

K. Ito, H. Nakamura, and . Sugai, Radical Control by Wall Heating of a Fluorocarbon Etching Reactor, Japanese Journal of Applied Physics, vol.33, issue.Part 2, No. 9A, p.1261, 1994.
DOI : 10.1143/JJAP.33.L1261

K. Sugai, Y. Nakamura, M. Hikosaka, and . Nakamura, Diagnostics and control of radicals in an inductively coupled etching reactor, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.13, issue.3, p.887, 1995.
DOI : 10.1116/1.579847

K. Ito, H. Nakamura, and . Sugai, Radical Control by Wall Heating of a Fluorocarbon Etching Reactor, Japanese Journal of Applied Physics, vol.33, issue.Part 2, No. 9A, p.1261, 1994.
DOI : 10.1143/JJAP.33.L1261

. J. Chantry, A simple formula for diffusion calculations involving wall reflection and low density, Journal of Applied Physics, vol.62, issue.4, p.1141, 1987.
DOI : 10.1063/1.339662

P. Kota, J. W. Coburn, and D. B. Graves, The recombination of chlorine atoms at surfaces, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.1, p.270, 1998.
DOI : 10.1116/1.580982

P. Bruno, G. Capezzuto, F. Cicala, and . Camarossa, glow discharges: A kinetic model of the surface process, Journal of Applied Physics, vol.62, issue.5, p.2050, 1987.
DOI : 10.1063/1.339548

W. Coburn, Ion-assisted etching of Si with Cl2: The effect of flux ratio, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.12, issue.3, p.1384, 1994.
DOI : 10.1116/1.587303

W. Coburn and H. F. Winters, Ion??? and electron???assisted gas???surface chemistry???An important effect in plasma etching, Journal of Applied Physics, vol.50, issue.5, p.3189, 1979.
DOI : 10.1063/1.326355

D. B. Lee, M. A. Graves, and . Lieberman, Role of etch products in polysilicon etching in a high-density chlorine discharge, Plasma Chemistry and Plasma Processing, vol.5, issue.1, p.99, 1996.
DOI : 10.1007/BF01465219

A. Schoolcraft and B. J. Garrison, Chemical reaction dynamics of F atom reaction with the dimer reconstructed Si{100}(2??1) surface, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.8, issue.4, p.3496, 1990.
DOI : 10.1116/1.576538

R. W. Charles and . Boswell, Ion contribution to the deposition of silicon dioxide in oxygen/silane helicon diffusion plasmas, Journal of Applied Physics, vol.81, issue.1, p.43, 1997.
DOI : 10.1063/1.364103

J. Drevillon, A. Huc, J. Lloret, G. Perrin, J. P. De-rosny et al., Silane dissociation mechanisms and thin film formation in a low pressure multipole dc discharge, Applied Physics Letters, vol.37, issue.7, p.646, 1980.
DOI : 10.1063/1.92008

L. Flamm and V. M. Donnelly, The design of plasma etchants, Plasma Chemistry and Plasma Processing, vol.36, issue.2, p.317, 1981.
DOI : 10.1007/BF00565992

I. Klimecky, J. W. Grizzle, F. L. Terry, and J. Jr, Compensation for transient chamber wall condition using real-time plasma density feedback control in an inductively coupled plasma etcher, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.21, issue.3, p.706, 2003.
DOI : 10.1116/1.1569921

J. Ullal, H. Singh, J. Daugherty, V. Vahedi, and E. S. , Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.20, issue.5, p.1939, 2002.
DOI : 10.1116/1.1502698

B. Graves and M. J. Kushner, Influence of modeling and simulation on the maturation of plasma technology: Feature evolution and reactor design, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.21, issue.5, p.152, 2003.
DOI : 10.1116/1.1600447

P. Cunge, J. P. Chabert, and . Booth, Laser-induced fluorescence detection of as a primary product of Si and reactive ion etching with gas, Plasma Sources Science and Technology, vol.6, issue.3, p.349, 1997.
DOI : 10.1088/0963-0252/6/3/012

H. Bell, O. Joubert, and L. Vallier, Polysilicon gate etching in high density plasmas. II. X-ray photoelectron spectroscopy investigation of silicon trenches etched using a chlorine-based chemistry, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.14, issue.3, p.1796, 1996.
DOI : 10.1116/1.588559

H. Bell and O. Joubert, Polysilicon gate etching in high density plasmas. III. X-ray photoelectron spectroscopy investigation of sidewall passivation of silicon trenches using an oxide hard mask, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.14, issue.4, p.2493, 1996.
DOI : 10.1116/1.588758

V. Guinn, C. C. Cheng, and V. M. Donnelly, Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl2/O2 high density plasmas, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.13, issue.2, p.214, 1995.
DOI : 10.1116/1.588355

K. Tuda, H. Shintani, and . Ootera, Profile evolution during polysilicon gate etching with low-pressure high-density Cl2/HBr/O2 plasma chemistries, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.19, issue.3, p.711, 2001.
DOI : 10.1116/1.1365135

H. Bell and O. Joubert, Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl2/O2 plasmas, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.15, issue.1, p.88, 1997.
DOI : 10.1116/1.589259

J. Ullal, H. Singh, V. Vahedi, and E. S. , Deposition of silicon oxychloride films on chamber walls during Cl2/O2 plasma etching of Si, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.20, issue.2, p.499, 2002.
DOI : 10.1116/1.1450578

C. H. Zau and H. Sawin, Effects of O[sub 2] Feed Gas Impurity on Cl[sub 2] Based Plasma Etching of Polysilicon, Journal of The Electrochemical Society, vol.139, issue.1, p.250, 1992.
DOI : 10.1149/1.2069179

R. Godfrey, S. J. Ullal, L. B. Braly, E. A. Edelberg, V. Vahedi et al., New diagnostic method for monitoring plasma reactor walls: Multiple total internal reflection Fourier transform infrared surface probe, Review of Scientific Instruments, vol.72, issue.8, p.3260, 2001.
DOI : 10.1063/1.1382638

J. Ullal, H. Singh, J. Daugherty, V. Vahedi, and E. S. , Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl2/O2 plasma etching of Si, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.20, issue.4, p.1195, 2002.
DOI : 10.1116/1.1479733

Z. Xu, A. Sun, X. Chen, D. Qian, and . Podlesnik, Fluorocarbon polymer formation, characterization, and reduction in polycrystalline???silicon etching with CF4-added plasma, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.19, issue.3, p.871, 2001.
DOI : 10.1116/1.1367262

Z. Xu, X. Sun, J. Qian, D. Holland, and . Podlesnik, Characteristics and mechanism of etch process sensitivity to chamber surface condition, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.19, issue.1, p.166, 2000.
DOI : 10.1116/1.1330266

D. Chou, K. Baer, and . Hanson, HBr concentration and temperature measurements in a plasma etch reactor using diode laser absorption spectroscopy, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.19, issue.2, p.477, 2000.
DOI : 10.1116/1.1342863

O. Cunge, N. Joubert, and . Sadeghi, Enhancement of the recombination rate of Br atoms by CF4 addition and resist etching in HBr/Cl2/O2 plasmas, Journal of Applied Physics, vol.94, issue.10, p.6285, 2003.
DOI : 10.1063/1.1619575

T. Xu, D. Lill, and . Podlesnik, Wall-dependent etching characteristics of organic antireflection coating in O[sub 2]+halogen/hydrogen halide plasma, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.19, issue.6, p.2893, 2001.
DOI : 10.1116/1.1412655

-. Sin, B. W. Chen, J. Loh, P. Yu, A. Yelehanka et al., Resist trimming in high-density CF[sub 4]/O[sub 2] plasmas for sub-0.1 ??m device fabrication, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.20, issue.5, p.1974, 2002.
DOI : 10.1116/1.1503791

J. Ullal, T. W. Kim, V. Vahedi, and E. S. , Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.21, issue.3, p.589, 2003.
DOI : 10.1116/1.1562176

J. Ullal, A. R. Godfrey, E. A. Edelberg, L. B. Braly, V. Vahedi et al., Effect of chamber wall conditions on Cl and Cl2 concentrations in an inductively coupled plasma reactor, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.20, issue.1, p.43, 2002.
DOI : 10.1116/1.1421602

M. Donnelly, plasma, Journal of Applied Physics, vol.79, issue.12, p.9353, 1996.
DOI : 10.1063/1.362613

A. Cleland and D. W. Hess, Detection of dry etching product species with in situ Fourier transform infrared spectroscopy, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.7, issue.1, p.35, 1988.
DOI : 10.1116/1.584442

C. Tsuchizawa, S. Takahashi, and . Matsuo, Influence of Reaction Products and Oxygen on Highly Selective Electron Cyclotron Resonance Ion Stream Etching of Si, Japanese Journal of Applied Physics, vol.33, issue.Part 1, No. 10, p.6019, 1994.
DOI : 10.1143/JJAP.33.6019

P. Herman, V. M. Donnelly, K. V. Guinn, and C. C. Cheng, surface probe during plasma processing, Physical Review Letters, vol.72, issue.17, p.2801, 1994.
DOI : 10.1103/PhysRevLett.72.2801

Y. Choe, N. C. Fuller, V. M. Donnelly, and I. P. Herman, Transient plasma-induced emission analysis of laser-desorbed species during Cl2 plasma etching of Si, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.18, issue.6, p.2669, 2000.
DOI : 10.1116/1.1290375

A. Sakai, H. Sakai, and . Okano, Beam, Japanese Journal of Applied Physics, vol.32, issue.Part 1, No. 6B, p.3089, 1993.
DOI : 10.1143/JJAP.32.3089

URL : https://hal.archives-ouvertes.fr/in2p3-00637485

D. Hartsough, Solid State Technol, 1993.

H. Nakasuji and . Shimizu, Low voltage and high speed operating electrostatic wafer chuck, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.10, issue.6, p.3573, 1992.
DOI : 10.1116/1.577786

F. Marx, Y. Ra, R. Yang, and C. Chen, Plasma and processing effects of electrode spacing for tungsten etchback using a bipolar electrostatic wafer clamp, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.12, issue.6, p.3087, 1994.
DOI : 10.1116/1.578940

V. Malyshev and V. M. Donnelly, Diagnostics of inductively coupled chlorine plasmas: Measurement of electron and total positive ion densities, Journal of Applied Physics, vol.90, issue.3, p.1130, 2001.
DOI : 10.1063/1.1381044

V. Malyshev and V. M. Donnelly, Diagnostics of chlorine inductively coupled plasmas. Measurement of electron temperatures and electron energy distribution functions, Journal of Applied Physics, vol.87, issue.4, p.1642, 2000.
DOI : 10.1063/1.372072

R. L. Cunge, O. Inglebert, L. Joubert, N. Vallier, and . Sadeghi, Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.20, issue.5, p.2137, 2002.
DOI : 10.1116/1.1511219

S. J. Braithwaite, J. P. Booth, and G. Cunge, A novel electrostatic probe method for ion flux measurements, Plasma Sources Science and Technology, vol.5, issue.4, p.677, 1996.
DOI : 10.1088/0963-0252/5/4/009

L. F. Dimauro, R. A. Gottscho, and T. A. Miller, Two???photon laser???induced fluorescence monitoring of O atoms in a plasma etching environment, Journal of Applied Physics, vol.56, issue.7, p.2007, 1984.
DOI : 10.1063/1.334242

W. Coburn and M. Chen, Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density, Journal of Applied Physics, vol.51, issue.6, p.3134, 1980.
DOI : 10.1063/1.328060

P. Booth, O. Joubert, J. Pelletier, and N. Sadeghi, Oxygen atom actinometry reinvestigated: Comparison with absolute measurements by resonance absorption at 130 nm, Journal of Applied Physics, vol.69, issue.2, p.618, 1991.
DOI : 10.1063/1.347395

P. Bouchoule and . Ranson, Study of volume and surface processes in low pressure radio frequency plasma reactors by pulsed excitation methods. I. Hydrogen???argon plasma, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.9, issue.2, p.317, 1991.
DOI : 10.1116/1.577508

J. P. Neuilly, L. Booth, and . Vallier, Chlorine dissociation fraction in an inductively coupled plasma measured by ultraviolet absorption spectroscopy, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.20, issue.1, p.225, 2002.
DOI : 10.1116/1.1430247

URL : https://hal.archives-ouvertes.fr/hal-00475898

E. A. Luque, J. Hudson, and . Booth, CF A???2??+???X???2?? and B???2?????X???2?? study by broadband absorption spectroscopy in a plasma etch reactor: Determination of transition probabilities, CF X???2?? concentrations, and gas temperatures, The Journal of Chemical Physics, vol.118, issue.2, p.622, 2003.
DOI : 10.1063/1.1527923

E. A. Luque, J. Hudson, I. D. Booth, and . Petsalakis, results on the CF C???2??+???X???2?? system, The Journal of Chemical Physics, vol.118, issue.3, p.1206, 2003.
DOI : 10.1063/1.1526637

M. Franz and C. Hollenstein, Diborane nitrogen/ammonia plasma chemistry investigated by infrared absorption spectroscopy, Thin Solid Films, vol.379, issue.1-2, p.37, 2000.
DOI : 10.1016/S0040-6090(00)01348-1

C. Wamsley, K. Mitsuhashi, and J. E. Lawler, High sensitivity absorption spectroscopy in glow discharge plasmas, Review of Scientific Instruments, vol.64, issue.1, p.45, 1993.
DOI : 10.1063/1.1144399

I. Andrew, J. H. Abraham, Z. C. Booske, A. E. Lu, and . Wendt, Absolute densities of long lived species in an ionized physical vapor deposition copper???argon plasma, Journal of Applied Physics, vol.88, issue.6, p.3208, 2000.
DOI : 10.1063/1.1289219

P. Booth, G. Cunge, F. Neuilly, and N. Sadeghi, Absolute radical densities in etching plasmas determined by broad-band UV absorption spectroscopy, Plasma Sources Science and Technology, vol.7, issue.3, p.423, 1998.
DOI : 10.1088/0963-0252/7/3/021

G. Macko, N. Cunge, and . Sadeghi, = 18) molecules in a dc glow discharge measured by cavity ringdown spectroscopy at 227 nm; validity domain of the technique, Journal of Physics D: Applied Physics, vol.34, issue.12, p.1807, 2001.
DOI : 10.1088/0022-3727/34/12/307

M. Donnelly and M. V. Malyshev, Diagnostics of inductively coupled chlorine plasmas: Measurements of the neutral gas temperature, Applied Physics Letters, vol.77, issue.16, p.2467, 2000.
DOI : 10.1063/1.1318727

P. Davis and R. A. Gottscho, Measurement of spatially resolved gas???phase plasma temperatures by optical emission and laser???induced fluorescence spectroscopy, Journal of Applied Physics, vol.54, issue.6, p.3080, 1983.
DOI : 10.1063/1.332514

E. Velazco, J. H. Kolts, and D. W. Setser, Rate constants and quenching mechanisms for the metastable states of argon, krypton, and xenon, The Journal of Chemical Physics, vol.69, issue.10, p.4357, 1978.
DOI : 10.1063/1.436447

R. Scheller, R. A. Gottscho, D. B. Graves, and T. Intrator, Quenching rates of Ar metastables in radio???frequency glow discharges, Journal of Applied Physics, vol.64, issue.2, p.598, 1988.
DOI : 10.1063/1.341948

S. Engeln, P. Mazouffre, D. C. Vankan, N. Schram, and . Sadeghi, Flow dynamics and invasion by background gas of a supersonically expanding thermal plasma, Plasma Sources Science and Technology, vol.10, issue.4, p.595, 2001.
DOI : 10.1088/0963-0252/10/4/308

P. Kim, J. B. Klimecky, F. L. Jeffries, R. K. Terry-jr, and . Hanson, measurements of HCl during plasma etching of poly-silicon using a diode laser absorption sensor, Measurement Science and Technology, vol.14, issue.9, p.1662, 2003.
DOI : 10.1088/0957-0233/14/9/318

L. Maynard and N. Hershkowitz, New alternative graphing methods for thin-film interferometry data, IEEE Transactions on Semiconductor Manufacturing, vol.6, issue.4, p.373, 1993.
DOI : 10.1109/66.267649

L. Maynard and N. Hershkowitz, Thin-film interferometry of patterned surfaces, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.13, issue.3, p.848, 1995.
DOI : 10.1116/1.588195

M. Donnelly, in a high???density helical resonator plasma, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.14, issue.3, p.1076, 1996.
DOI : 10.1116/1.580137

L. G. Renault, D. Gosset, A. Rouchon, and . Ermolieff, Angle-resolved x-ray photoelectron spectroscopy of ultrathin Al[sub 2]O[sub 3] films grown by atomic layer deposition, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.20, issue.6, p.1867, 2002.
DOI : 10.1116/1.1507330

N. Petri, D. Sadeghi, and . Henry, dense plasma: Application to a helicon reactor, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.13, issue.6, p.2930, 1995.
DOI : 10.1116/1.579616

I. Vedeneyev, Bond energies, ionization potentials, and electron affinities, 1966.

J. W. Greer, D. B. Coburn, and . Graves, Vacuum beam studies of photoresist etching kinetics, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.18, issue.5, p.2288, 2000.
DOI : 10.1116/1.1287721

A. Vitale, H. Chae, and H. H. Sawin, Silicon etching yields in F2, Cl2, Br2, and HBr high density plasmas, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.19, issue.5, p.2197, 2001.
DOI : 10.1116/1.1378077

C. Martinet, R. A. Devine, and M. Brunel, Oxidation of crystalline Si in an O2 plasma: Growth kinetics and oxide characterization, Journal of Applied Physics, vol.81, issue.10, p.6996, 1997.
DOI : 10.1063/1.365235

O. Desvoivres, L. Joubert, and . Vallier, X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.19, issue.2, p.420, 2001.
DOI : 10.1116/1.1352727

H. Coutinho and A. G. Trigueiros, Weighted oscillator strengths and lifetimes for the SiI spectrum, Journal of Quantitative Spectroscopy and Radiative Transfer, vol.75, issue.3, p.357, 2002.
DOI : 10.1016/S0022-4073(02)00013-4

W. B. Pearse and A. G. Gaydon, The Identification of Molecular Spectra, 1965.
DOI : 10.1007/978-94-009-5758-9

W. Meijer, J. J. Ubachs, A. Ter-meulen, and . Dymanus, High-resolution lamb dip spectroscopy on OD and SiCl in a molecular beam, Chemical Physics Letters, vol.139, issue.6, p.603, 2002.
DOI : 10.1016/0009-2614(87)87350-5

P. Huber and G. Herzberg, Constant of diatomic molecules (van Nostrand Reinhold Company, 1979.

K. G. Singleton, R. A. Mc-kendrick, J. B. Copeland, and . Jeffries, Vibrational transition probabilities in the B-X and B'-X systems of the chlorosilylidyne radical, The Journal of Physical Chemistry, vol.96, issue.24, p.9703, 1992.
DOI : 10.1021/j100203a026

N. Suzuki, G. Washida, and . Inoue, Laser-induced fluorescence of the SiCl2 radical, Chemical Physics Letters, vol.131, issue.1-2, p.24, 1986.
DOI : 10.1016/0009-2614(86)80511-5

C. Cheng, K. V. Guinn, I. P. Herman, and V. M. Donnelly, , real???time, pulsed laser???induced thermal desorption, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.13, issue.4, p.1970, 1995.
DOI : 10.1116/1.579638

H. Nakano and . Sugai, into neutral radicals, Journal of Physics D: Applied Physics, vol.26, issue.11, p.1909, 1993.
DOI : 10.1088/0022-3727/26/11/011

A. Oldershaw, K. Robinson, and J. , Ultraviolet absorption spectrum of silicon monochloride, Journal of Molecular Spectroscopy, vol.38, issue.2, p.306, 1971.
DOI : 10.1016/0022-2852(71)90115-9

L. Wiese, M. W. Smith, and B. M. Miles, Atomic Transition Probabilities, 1969.
DOI : 10.6028/NBS.NSRDS.4

URL : https://hal.archives-ouvertes.fr/jpa-00249764

H. Smith and H. S. Liszt, Radiative lifetimes and absolute oscillator strengths for the SiOA1??-X1??+ transition, Journal of Quantitative Spectroscopy and Radiative Transfer, vol.12, issue.4, p.505, 1972.
DOI : 10.1016/0022-4073(72)90161-6

N. Oddershede and . Elander, Spectroscopic constants and radiative lifetimes for valence???excited bound states in SiO, The Journal of Chemical Physics, vol.65, issue.9, p.3495, 1976.
DOI : 10.1063/1.433577

B. H. Van-de-weijer and . Zwerver, Laser-induced fluorescence of OH and SiO molecules during thermal chemical vapour deposition of SiO2 from silane-oxygen mixtures, Chemical Physics Letters, vol.163, issue.1, p.48, 1989.
DOI : 10.1016/0009-2614(89)80009-0

A. Oldershaw and K. Robinson, Ultra-violet spectrum of SiBr, Transactions of the Faraday Society, vol.67, p.1870, 1971.
DOI : 10.1039/tf9716701870

F. Rogowski and A. Fontijn, The radiative lifetime of AlCl A 1??, Chemical Physics Letters, vol.137, issue.3, p.219, 1987.
DOI : 10.1016/0009-2614(87)80207-5

J. Mogab, A. C. Adams, and D. L. Flamm, plasmas, Journal of Applied Physics, vol.49, issue.7, p.3796
DOI : 10.1063/1.325382

P. Walkup, R. W. Avouris, J. M. Dreyfus, and . Jasinski, Laser detection of diatomic products of plasma sputtering and etching, Applied Physics Letters, vol.45, issue.4, p.372, 1984.
DOI : 10.1063/1.95280

H. Chew, J. Chen, R. C. Woods, and J. L. Shohet, Silicon oxide deposition in an electron cyclotron resonance plasma with microwave spectroscopic monitoring of SiO, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.13, issue.5, p.2483, 1995.
DOI : 10.1116/1.579492

J. Buss, P. Ho, and M. E. Weber, Laser studies of the reactivity of SiO with the surface of a depositing film, Plasma Chemistry and Plasma Processing, vol.107, issue.121, p.61, 1993.
DOI : 10.1007/BF01447170

J. Whitman, S. A. Joyce, J. A. Yarmoff, F. R. Mcfeely, and L. J. Terminello, The chemisorption of chlorosilanes and chlorine on Si(111)7 ?? 7, Surface Science, vol.232, issue.3, p.297, 1990.
DOI : 10.1016/0039-6028(90)90122-O

P. A. Gupta, B. G. Coon, S. M. Koehler, and . George, on Si(111)7??7, The Journal of Chemical Physics, vol.93, issue.4, p.2827, 1990.
DOI : 10.1063/1.458868

A. Coon, P. Gupta, M. L. Wise, and S. M. George, on Si(111) 7??7, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.10, issue.2, p.324, 1992.
DOI : 10.1116/1.578052

J. Madix and J. A. Schwarz, Chemical relaxation molecular beam studies of reactive gas-solid scattering, Surface Science, vol.24, issue.1, p.264, 1971.
DOI : 10.1016/0039-6028(71)90235-4

K. Nakamura, H. Iizuka, and . Yano, poly-Si RIE with Carbon Elimination, Japanese Journal of Applied Physics, vol.28, issue.Part 1, No. 10, p.2142, 1989.
DOI : 10.1143/JJAP.28.2142

H. Nakano and . Sugai, into Neutral Radicals, Japanese Journal of Applied Physics, vol.31, issue.Part 1, No. 9A, p.2919, 1992.
DOI : 10.1143/JJAP.31.2919

J. Shul, R. S. Freund, and R. C. Wetzel, Electron-impact-ionization cross sections of GaCl, GeCl, and SnCl, Physical Review A, vol.41, issue.11, p.5856, 1990.
DOI : 10.1103/PhysRevA.41.5856

M. A. Codastefano, D. Ricci, and . Rocca, Search for isotope effects in the diffusion of methane in krypton at various densities, Physical Review A, vol.15, issue.5, p.2103, 1977.
DOI : 10.1103/PhysRevA.15.2103

V. Malyshev, V. M. Donnelly, A. Kornblit, and N. A. Ciampa, Percent dissociation of Cl2 in inductively coupled, chlorine-containing plasmas, Journal of Applied Physics, vol.84, issue.1, p.137, 1998.
DOI : 10.1063/1.368010

D. Hwang and T. M. Su, Diffusion Coefficients of Atomic Halogen, Journal of the Chinese Chemical Society, vol.156, issue.1, p.33, 1990.
DOI : 10.1002/jccs.199000005

P. Booth, G. Cunge, P. Chabert, and N. Sadeghi, CFx radical production and loss in a CF4 reactive ion etching plasma: Fluorine rich conditions, Journal of Applied Physics, vol.85, issue.6, p.3097, 1999.
DOI : 10.1063/1.369649

L. Aussi and . Cinétique, qui sont les précurseurs de ce dépôt, a été étudiée par la spectroscopie d'absorption large bande dans l'UV. Il a été conclu que les précurseurs du dépôt sont le Si, et SiCl + , mais la réaction de ces espèces avec les parois peut aussi mener à la formation de SiCl 2 volatil