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Etude des interactions plasma–surface pendant la gravure du silicium dans des plasmas HBr/Cl2/O2

Abstract : The aim of this work is to study the plasma-wall interactions during the etching of silicon gates in HBr/Cl2/O2 chemistries. In these processes a layer forms on the reactor walls and causes process drifts. The chemical nature and the deposition mechanisms of this layer have been studied by its afterward etching with an Ar/SF6 plasma and analysing the time resolved composition of the etch products by optical emission and mass spectrometry diagnostics. This allowed to demonstrate that this layer is a chlorine-rich SiOxCly layer. Also, the kinetics of SiClx radicals produced when etching silicon in HBr/Cl2/O2 plasmas, which are the precursors of the layer deposition, has been analysed by UV broad band absorption spectroscopy. It was concluded that the deposition precursors are Si, Si+, SiCl and SiCl+, but the reaction of these species with the deposited layer also leads to the formation of volatile SiCl2 radicals.
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https://tel.archives-ouvertes.fr/tel-00009005
Contributor : Martin Kogelschatz <>
Submitted on : Wednesday, April 13, 2005 - 10:28:44 AM
Last modification on : Friday, November 6, 2020 - 3:57:08 AM
Long-term archiving on: : Friday, April 2, 2010 - 10:00:43 PM

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Martin Kogelschatz. Etude des interactions plasma–surface pendant la gravure du silicium dans des plasmas HBr/Cl2/O2. Micro et nanotechnologies/Microélectronique. Université Joseph-Fourier - Grenoble I, 2004. Français. ⟨tel-00009005⟩

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