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Intégration monolithique sur silicium d'émetteurs de lumière à base de GaAs par épitaxie en phase vapeur aux organométalliques sur pseudo-substrat de Ge/Si

Abstract : The monolithic integration of GaAs on Si would provide a wide range of applications, from optical interconnects to high efficiency low cost solar cells. However, the differences between the two materials result in the formation of dislocations, cracks, and antiphase boundaries. We demonstrate that the use of a pseudo-substrate, consisting of a Ge buffer layer on a silicon substrate, and the introduction of a super-lattice, grown by atomic layer epitaxy (ALE) at the growth start, lead to a GaAs layer with good optical properties. Light emitting devices based on quantum wells and quantum dots (LED, laser, vertical emitting LED) are realised. Their characteristics are studied and compared to similar devices on pure GaAs substrates.
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https://tel.archives-ouvertes.fr/tel-00008758
Contributor : Yves Chriqui <>
Submitted on : Friday, March 11, 2005 - 3:48:40 PM
Last modification on : Wednesday, December 9, 2020 - 3:10:39 PM
Long-term archiving on: : Friday, April 2, 2010 - 10:02:58 PM

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  • HAL Id : tel-00008758, version 1

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Yves Chriqui. Intégration monolithique sur silicium d'émetteurs de lumière à base de GaAs par épitaxie en phase vapeur aux organométalliques sur pseudo-substrat de Ge/Si. Micro et nanotechnologies/Microélectronique. Université Pierre et Marie Curie - Paris VI, 2004. Français. ⟨tel-00008758⟩

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