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Technologie FeRAM : fiabilité et mécanismes de défaillance de condensateurs ferroélectriques élémentaires et intégrés

Abstract : The industrial development of the FeRAM technology (providing non volatility, fast access and low power consumption) is still limited by the reliability of the integrated ferroelectric capacitor. The PhD work, focused on the understanding of failure mechanisms, was based on both electrical and microstructural studies of elementary capacitors, test vehicles and chips. The degradation of the ferroelectric properties of elementary capacitors under electrical stresses was correlated to their microstructural evolution. Furthermore, X-ray irradiation has revealed as an accelerating factor of degradation. Concerning the advanced technological devices, synchrotron techniques and electron microscopy, associated with reliability testing, enabled to correlate the failure mechanisms with the capacitor microstructure, its geometry (planar or 3D) and the integration steps.
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https://tel.archives-ouvertes.fr/tel-00008576
Contributor : Nicolas Menou <>
Submitted on : Friday, February 25, 2005 - 9:34:13 AM
Last modification on : Thursday, March 15, 2018 - 4:56:03 PM

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  • HAL Id : tel-00008576, version 1

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Nicolas Menou. Technologie FeRAM : fiabilité et mécanismes de défaillance de condensateurs ferroélectriques élémentaires et intégrés. Matière Condensée [cond-mat]. Université du Sud Toulon Var, 2004. Français. ⟨tel-00008576⟩

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