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Transport dépendant du spin dans des doubles jonctions tunnel magnétiques

Abstract : The purpose of this work is the detection of magnetocurrent in the magnetic tunnel transistor based on a double tunnel junction. This magnetocurrent come from the emission of a spin polarized hot electrons current. Samples have been made by sputtering. A new technique of lithography and etching allowed us to take an electrical contact on each three electrode. We showed the influence of etching on magnetic tunnel junction transport properties. Thanks to these three contacts, we compared the individual properties of the bottom junction and the top junction, and we showed that the cumulative roughness of layers leads to magnetoresistance properties degradation. Measurements in transistor configuration have been made. We detected hot electrons current and showed magnetocurrent collection. We quantized the importance of this magnetocurrent compare to a strong leak current. The origin of this leak current and solution to reduce it have been discussed.
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Contributor : Guillemin Rodary <>
Submitted on : Friday, February 25, 2005 - 9:57:14 AM
Last modification on : Wednesday, June 3, 2020 - 10:30:04 AM
Long-term archiving on: : Friday, November 25, 2016 - 8:59:35 AM


  • HAL Id : tel-00008574, version 1



Guillemin Rodary. Transport dépendant du spin dans des doubles jonctions tunnel magnétiques. Matière Condensée [cond-mat]. Université Paris-Diderot - Paris VII, 2004. Français. ⟨tel-00008574⟩



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