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Puits et boîtes quantiques de GaN/AlN pour les applications en optoélectronique à 1,55 µm

Abstract : GaN/AlN nanostructures present great potentialities for applications to devices operating at telecommunication wavelengths. The large conduction-band discontinuity for this system allows intraband transitions between 1.3 and 1.55 µm. The samples presented in this work have been grown by molecular beam epitaxy using radiofrequency nitrogen plasma (CEA/Grenoble) or ammonia (CRHEA) as sources. The structural characterization has been carried out by means of RBS, high-resolutions X-ray diffraction and transmission electron microscopy measurements. Optical measurements including Fourier Transform infrared transmission, photo-induced absorption and photoluminescence have also been performed during this study. In GaN/AlN quantum wells, inter-subband (ISB) transitions are observed in the wavelength range of 1.4-2.1 µm depending on the quantum wells thickness. We show that carrier localization occurs even at room temperature in this system due to thickness fluctuations at the interfaces. The observed blue-shift of the IBS absorption with increasing doping level is attributed to many-body effects dominated by the exchange interaction. The first photo-detector device based on the intersubband absorptions has been designed and processed. Intraband absorptions resulting from the vertical confinement have been observed for the first time in GaN/AlN self-organized quantum between 2.4 and 1.2 µm. The signature of the in-plane confinement is found at longer wavelengths. We show that by increasing the internal field and by reducing the nanostructures height to 1.5-2 nm, absorption can be observed at 1.55 µm.
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https://tel.archives-ouvertes.fr/tel-00008330
Contributor : Ana Helman <>
Submitted on : Wednesday, February 2, 2005 - 7:33:18 PM
Last modification on : Wednesday, October 14, 2020 - 4:00:38 AM
Long-term archiving on: : Friday, April 2, 2010 - 9:05:29 PM

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  • HAL Id : tel-00008330, version 1

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Ana Helman. Puits et boîtes quantiques de GaN/AlN pour les applications en optoélectronique à 1,55 µm. Matériaux. Université Paris Sud - Paris XI, 2004. Français. ⟨tel-00008330⟩

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