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Modélisation physique de la structure électronique, du transport et de l'ionisation par choc dans les matériaux IV-IV massifs, contraints et dans les puits quantiques

Abstract : This PhD thesis is devoted to the study of physical phenomena in SiGe devices involving high energy carriers which can induce impact ionization. A thirty-band k.p method has been developed to model energy band diagrams of bulk and strained Si, Ge and SiGe alloys on the whole Brillouin zone in a large energy range (11 eV around the band gap). This method gives access to the Luttinger parameters and the conduction band effective masses with a very good accuracy. Associated with an envelop function algorithm, the band diagrams of SiGe quantum wells have been obtained in the valence and in the conduction band. From these band diagrams, carrier densities of states are obtained in bulk and strained semiconductors and in quantum wells. Hole density of state masses in bulk and strained SiGe alloys have been calculated as a function of crystal temperature. Chapter 4 is devoted to transport study in SiGe alloys with a matrix resolution of the Boltzmann transport equation. From the density of state masses, hole mean mobilities are calculated in SiGe alloys. From high electric field transport simulation, impact ionization coefficients have been evaluated for electrons in strained Si and for holes in strained Ge. Electroluminescence measurements have been performed on Si/SiGe and Ge/SiGe HFETs. These data give access to experimental study of impact ionization.
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Submitted on : Monday, January 31, 2005 - 5:59:11 PM
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Soline Richard. Modélisation physique de la structure électronique, du transport et de l'ionisation par choc dans les matériaux IV-IV massifs, contraints et dans les puits quantiques. Matière Condensée [cond-mat]. Université Paris Sud - Paris XI, 2004. Français. ⟨tel-00008310⟩

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