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ETUDE DE LA CROISSANCE THERMIQUE DES CAVITES INDUITES PAR IMPLANTATION D'HELIUM DANS LE SILICIUM

Abstract : In this study, we were interested in cavities induce by helium implantation in silicon. We wanted to determine the mechanisms which were involved in cavities formation and growth (Ostwald Ripening or Migration Coalescence). We used implantation energies from 10 keV to 1,55 MeV with implantation doses from 1.45.1016 to 1017 He.cm-2. We have shown vacancies, helium and implantation depth are the main parameters which are involved in cavities growth. We have also demonstrated Ostwald Ripening rules that growth when annealing temperature is below 1000°C so we propose a new model for cavities growth based on this mechanism.
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https://tel.archives-ouvertes.fr/tel-00008137
Contributor : Romain Delamare <>
Submitted on : Thursday, January 20, 2005 - 12:08:30 PM
Last modification on : Thursday, January 11, 2018 - 6:21:04 AM
Long-term archiving on: : Friday, April 2, 2010 - 9:44:55 PM

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  • HAL Id : tel-00008137, version 1

Citation

Romain Delamare. ETUDE DE LA CROISSANCE THERMIQUE DES CAVITES INDUITES PAR IMPLANTATION D'HELIUM DANS LE SILICIUM. Mécanique [physics.med-ph]. Université d'Orléans, 2003. Français. ⟨tel-00008137⟩

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