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Modélisation et simulation du transport quantique dans les transistors MOS nanométriques

Abstract : The agressive downscaling of the transistors leads to nanoscale devices in which quantum effects are increasingly prevalent. This work models MOSFETs transistors and determines the influence of quantum effects on multiple-gate emerging architectures. We use the self-consistent non-equilibrium Green's function formalism expressed in the tight-binding theory. We first model a two-dimension double-gate MOSFET, in which source-drain axis is represented by an atomic chain. We study the magnitude of the tunneling current between source and drain according to the channel length and show that the transistor still has acceptable electrical characteristics down to a 7 nm channel length. We then develop a three-dimension model to describe the emerging MOSFET architectures i.e. Tri-gate, Pi-gate, Omega-gate, and Gate-all-around. A detailed study illustrates several concepts of the theory of Landauer transport (quantum of conductance, resistance of the reservoirs) and compares the electrical performances associated to each gate configuration. We discuss the influence of electrostatic control according to the channel length and dimensions of the cross-section. Lastly, we propose a model able to treat point defects in such components and investigate the impact of their type and their position.
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https://tel.archives-ouvertes.fr/tel-00008075
Contributor : Marc Bescond <>
Submitted on : Friday, January 14, 2005 - 4:36:20 PM
Last modification on : Thursday, October 24, 2019 - 3:22:02 PM
Long-term archiving on: : Friday, April 2, 2010 - 9:02:37 PM

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  • HAL Id : tel-00008075, version 1

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Marc Bescond. Modélisation et simulation du transport quantique dans les transistors MOS nanométriques. Matière Condensée [cond-mat]. Université de Provence - Aix-Marseille I, 2004. Français. ⟨tel-00008075⟩

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