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Modélisation des structures Métal-Oxyde-Semiconducteur (MOS) : Applications aux dispositifs mémoires

Abstract : Our study concerns the modeling of MOS devices affected by defects which deteriorate their electric properties and consequently those of the memory devices. A great importance is given to the knowledge of the phenomena induced by the miniaturization of the capacity and transistor MOS which compose the memories. Our models, based on various studies of these subjects, represent new analysis tools geared to basic models in order to describe the complex operations of the memory devices. After a review of the symbols and basic equations used for MOS capacitors and MOS transistors, we summarize the memory history up to the use of dots. The second part of our work describes various MOS capacitor modeling developed in presence of parasitic effects such as poly-depletion of the gate, non uniformity of the substrate doping, non uniformity of the oxide layer, and the oxide fixed charges. From these models, we come up with a method to determine the repartition of the charges generated within the oxide layer after electrical stress and an analysis of the charge origin. The third part is devoted to MOS transistor modeling based on a segmented approach. This was applied to the series resistance study and the doping (gate and substrate) modeling, then extended to the modeling of ultra-thin insulator transistors. First, we present the modifications of MOS transistor IDS(VGS, VDS) characteristics induced by these non uniformities. Then, we use our models for the silicon nanocristal memories. We propose a model of charge storage in the dots close to the drain which enabled us to develop a model simulating writing operation of these memories. The electric characterizations of these structures with discrete traps are also analyzed by using the same models.
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Contributor : Sandrine Bernardini <>
Submitted on : Wednesday, December 15, 2004 - 4:38:49 PM
Last modification on : Monday, November 19, 2018 - 11:04:04 AM
Long-term archiving on: : Wednesday, November 23, 2016 - 5:36:58 PM


  • HAL Id : tel-00007764, version 1



Sandrine Bernardini. Modélisation des structures Métal-Oxyde-Semiconducteur (MOS) : Applications aux dispositifs mémoires. Micro et nanotechnologies/Microélectronique. Université de Provence - Aix-Marseille I, 2004. Français. ⟨tel-00007764⟩



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