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Organisation à longue distance par un réseau de dislocations faiblement enterré de nanostructures de semiconducteurs III-V auto-assemblées sur substrat d'arséniure de gallium

Abstract : Self-assembled nanostructures are particularly interesting for optoelectronic and photonic applications, especially on GaAs substrate. Nevertheless, their long-range spatial distribution is random, their density is difficult to control, their size distribution can be large and their shapes can be different. By overcoming these drawbacks, it should be possible to improve the performances of existing devices or to fabricate new ones. This work studies the possibility to order on a long-range self-assembled nanostructures on GaAs substrate, by means of the elastic fields induced at the surface by shallowly buried periodic dislocation networks (DNs). These DNs form at the crystalline interface between a thin GaAs layer and a GaAs substrate (joined together by <>) in order to accommodate crystalline misorientations between their crystallographic planes. We showed by means of a transmission electron microscopy study that the misorientations can be chosen so that the dislocations form a periodic hexagonal network, which possesses characteristics favorable to the two-dimensional long-range ordering of nanostructures. We demonstrated experimentally such an ordering for GaAs and InGaAs self-assembled nanostructures.
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https://tel.archives-ouvertes.fr/tel-00007633
Contributor : José Coelho <>
Submitted on : Friday, December 3, 2004 - 4:34:27 PM
Last modification on : Monday, October 19, 2020 - 11:11:52 AM
Long-term archiving on: : Thursday, September 13, 2012 - 1:25:10 PM

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  • HAL Id : tel-00007633, version 1

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José Coelho. Organisation à longue distance par un réseau de dislocations faiblement enterré de nanostructures de semiconducteurs III-V auto-assemblées sur substrat d'arséniure de gallium. Matière Condensée [cond-mat]. Université Paris Sud - Paris XI, 2004. Français. ⟨tel-00007633⟩

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