H. A. Atwater, Course de 'Physics of Semiconductors and Semiconductor Devices

]. A. Gro67 and . Grove, Physics and technology of semiconductor devices, Vescan and H. Lüth, Sci. Eng. B, vol.101, issue.9, 1967.

H. Hirayama, M. Hiroi, and T. Ide, -patterned Si(100) surfaces, Physical Review B, vol.48, issue.23, p.17331, 1993.
DOI : 10.1103/PhysRevB.48.17331
URL : https://hal.archives-ouvertes.fr/in2p3-00842900

C. J. Huang, D. Z. Li, B. W. Cheng, J. Z. Yu, and Q. M. Wang, Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure, Applied Physics Letters, vol.77, issue.18, p.2852, 2000.
DOI : 10.1063/1.1322372

Y. Kobayashi and K. Sugii, Thermal decomposition of very thin oxide layers on Si(111), Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.10, issue.4, p.2308, 1992.
DOI : 10.1116/1.577936

F. Leroy, Auto-organisation de nano-structures par des réseaux de dislocations enterrées, Thèse de doctorat CEA/ DRFMC, 2003.

V. Vinh-le-thanh, . Yam, H. Lam, Y. Nguyen, P. Zheng et al., Vertical ordering in multilayers of self-assembled Ge/Si(001) quantum dots, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.20, issue.3, p.1259, 2002.
DOI : 10.1116/1.1456522

W. K. Liu and M. B. Santos, Thin Films: Heteroepitaxial Systems, World Scientific, 1999.
DOI : 10.1142/3715

G. J. Slusser and L. M. Dowell, Sources of surface contamination affecting electrical characteristics of semiconductors, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.5, issue.4, p.1649, 1987.
DOI : 10.1116/1.574539

L. Vescan, K. Grimm, and C. Dieker, Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.16, issue.3, p.1549, 1998.
DOI : 10.1116/1.589937

]. V. Yam01, V. L. Yam, Y. Thanh, P. Zheng, and D. Boucaud, Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots, Physical Review B, vol.63, issue.3, p.33313, 2001.
DOI : 10.1103/PhysRevB.63.033313

Z. Zhong, A. Halilovic, M. Muhlberger, F. Schaffler, and G. Bauer, Ge island formation on stripe-patterned Si(001) substrates, Applied Physics Letters, vol.82, issue.3, p.445, 2003.
DOI : 10.1063/1.1536265

H. Nguyen, V. L. Thanh, D. Débarre, V. Yam, M. Halbwax et al., Si(001) surfaces Lam, Selective epitaxial growth of Ge quantum dots on patterned SiO, p.224, 2003.

H. Nguyen, V. L. Thanh, D. Débarre, V. Yam, D. Bouchier et al., Selective growth of Ge quantum dots on chemically prepared SiO 2 /Si(001) surfaces Lam, Material Science and Engineering B, vol.101, 0199.

V. Le-thanh, . Yam, . H. Lam, Y. Nguyen, P. Zheng et al., Vertical ordering in multilayers of self-assembled Ge/Si(001) quantum dots, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.20, issue.3, p.1259, 2002.
DOI : 10.1116/1.1456522

. H. Lam, V. L. Nguyen, M. Thanh, D. Halbwax, V. Débarre et al., Formation and properties of selectively grown Ge, press dans Supperlattices and Microstructures, 2004.

H. Nguyen, V. L. Thanh, D. Débarre, V. Yam, and M. Halbwax, Si(001) sous forme de couches simples et de multicouches Lam, Étude de la formation de boîtes quantiques de Ge dans des motifs de SiO Bouchier Journée Nationale Boîtes Quantiques, 2003.

H. Ge, /. Si-halbwax, E. Cassan, V. Yam, L. Vivien et al., pour la photodétection à 1,31 et 1,55 µm dans la filière silicium M, 2003.