Y. A. Aarik, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev et al., wavelength range, Soviet Journal of Quantum Electronics, vol.10, issue.1, p.50, 1980.
DOI : 10.1070/QE1980v010n01ABEH009853

M. A. Afromowitz, Refractive index of Ga1???xAlxAs, Solid State Communications, vol.15, issue.1, p.59, 1974.
DOI : 10.1016/0038-1098(74)90014-3

Z. I. Alferov and R. F. Kazarinov, Semiconductor laser with electrical pumping, p.181737, 1963.

C. Alibert, Contribution à l'étude de l'électroréflexion, Applications spectroscopiques dans les semiconducteurs, Thèse de Doctorat, 1973.

C. Alibert, M. Skouri, A. Joullié, and M. Benouna, in the transparent wavelength region, Journal of Applied Physics, vol.69, issue.5, p.3208, 1991.
DOI : 10.1063/1.348538

G. Almuneau, F. Genty, L. Chusseau, S. Gaillard, N. Bertru et al., AlGaAsSb/AlAsSb Bragg Mirrors on InP for 1.3 and 1.55µm Vertical Cavity Surface Emitting Lasers, 1997.

G. Almuneau, F. Genty, A. Wilk, P. Grech, A. Joullié et al., GaInSb/AlGaAsSb Strained Quantum Well Edge and Vertical Semiconductor Lasers at 1.55 µm Operation
DOI : 10.1088/0268-1242/14/1/014

P. M. Amirtharaj and D. G. Seiler, Optical properties of semiconductors, Handbook of Optics, Part II, 1995.

T. Anan, H. Shimomura, and S. Sugou, Improved reflectivity of AlPSb/GaPSb Bragg reflector for 1.55 ??m wavelength, Electronics Letters, vol.30, issue.25, p.2138, 1994.
DOI : 10.1049/el:19941448

J. R. Arthur, Molecular Beams with GaAs Surfaces, Journal of Applied Physics, vol.39, issue.8, p.4032, 1968.
DOI : 10.1063/1.1656901

D. I. Babic and S. W. Corzine, Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors, IEEE Journal of Quantum Electronics, vol.28, issue.2, p.514, 1992.
DOI : 10.1109/3.123281

D. I. Babic, Double-fused long-wavelength vertical-cavity lasers, 1995.

D. I. Babic, J. Piprek, K. Streubel, R. P. Mirin, N. M. Margalit et al., Design and analysis of double-fused 1.55-??m vertical-cavity lasers, IEEE Journal of Quantum Electronics, vol.33, issue.8, p.1369, 1997.
DOI : 10.1109/3.605560

B. R. Bennett and R. A. Soref, Electrorefraction and electroabsorption in InP, GaAs, GaSb, InAs, and InSb, IEEE Journal of Quantum Electronics, vol.23, issue.12, p.2159, 1987.
DOI : 10.1109/JQE.1987.1073276

B. R. Bennett, R. A. Soref, D. Alamo, and J. A. , Carrier-induced change in refractive index of InP, GaAs and InGaAsP, IEEE Journal of Quantum Electronics, vol.26, issue.1, p.113, 1990.
DOI : 10.1109/3.44924

N. Bertru, O. Brandt, N. Wassemeier, and K. Ploog, Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy, Applied Physics Letters, vol.68, issue.1, p.31, 1996.
DOI : 10.1063/1.116746

N. Bertru, A. N. Baranov, Y. Cuminal, G. Almuneau, F. Genty et al., Molecular Beam Epitaxial growth of GaInSb/GaSb strained quantum wells for infrared diode lasers, Semicond. Sci. Technol, vol.13, p.1, 1998.

O. Blum, M. J. Hafich, J. F. Klem, K. L. Lear, and S. N. Chu, Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers, Applied Physics Letters, vol.67, issue.22, p.3233, 1995.
DOI : 10.1063/1.114882

O. Blum, J. F. Klem, K. L. Lear, G. A. Vawter, and S. R. Kurtz, Optically pumped, monolithic, all-epitaxial 1.56 [micro sign]m vertical cavity surface emitting laser using Sb-based reflectors, Electronics Letters, vol.33, issue.22, p.1878, 1997.
DOI : 10.1049/el:19971284

M. Born and E. Wolf, Principles of Optics, 1970.
DOI : 10.1017/CBO9781139644181

H. C. Casey and M. B. Panish, Heterostructure Lasers, Journal of The Electrochemical Society, vol.126, issue.5, 1978.
DOI : 10.1149/1.2129123

L. L. Chang, L. Esaki, W. E. Howard, R. Ludeke, and G. Schul, Structures Grown by Molecular Beam Epitaxy, Journal of Vacuum Science and Technology, vol.10, issue.5, p.655, 1973.
DOI : 10.1116/1.1318408

M. J. Cherng, Y. T. Cherng, H. R. Jen, P. Harper, R. M. Cohen et al., OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5, Journal of Electronic Materials, vol.20, issue.2, p.79, 1985.
DOI : 10.1007/BF02649907

T. H. Chiu, W. T. Tsang, S. N. Chu, J. Shah, and J. A. Ditzenberger, lattice matched to InP, Applied Physics Letters, vol.46, issue.4, p.408, 1985.
DOI : 10.1063/1.95595

F. S. Choa, K. Tai, W. T. Tsang, and S. N. Chu, High reflectivity 1.55 ??m InP/InGaAsP Bragg mirror grown by chemical beam epitaxy, Applied Physics Letters, vol.59, issue.22, p.2820, 1991.
DOI : 10.1063/1.105870

H. K. Choi and S. J. Eglash, Room???temperature cw operation at 2.2 ??m of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy, Applied Physics Letters, vol.59, issue.10, p.1165, 1991.
DOI : 10.1063/1.105544

Y. Cuminal, Réalisation et étude de diodes lasers à base de GaSb émettant vers 2,3 µm pour application à l'analyse des gaz, Thèse de Doctorat, 1997.

P. J. Dean, . Prog, and . Cryst, Photoluminescence as a diagnostic of semiconductors, Progress in Crystal Growth and Characterization, vol.5, issue.1-2, p.89, 1982.
DOI : 10.1016/0146-3535(82)90010-7

J. P. Debray, N. Bouché, L. Roux, G. Raj, R. Quillec et al., Monolithic vertical cavity device lasing at 1.55 [micro sign]m in InGaAlAs system, Monolithic vertical cavity device lasing at 1.55 µm in InGaAlAs system, p.868, 1997.
DOI : 10.1049/el:19970568

C. Deparis, J. Massies, and G. Neu, As/GaAs quantum wells and their photoluminescence properties, Applied Physics Letters, vol.56, issue.3, p.233, 1990.
DOI : 10.1063/1.102840

D. G. Deppe, N. D. Gerrard, C. J. Pinzone, R. D. Dupuis, and E. F. Shubert, As for 1.65 ??m wavelength, Applied Physics Letters, vol.56, issue.4, p.315, 1990.
DOI : 10.1063/1.102814

R. Dingle, W. Wiegmann, and C. H. Henry, Heterostructures, Physical Review Letters, vol.33, issue.14, p.827, 1974.
DOI : 10.1103/PhysRevLett.33.827

J. A. Dobrowolski, Optical properties of films and coatings, Handbook of Optics, p.42, 1995.

J. D. Dow and D. Redfield, Toward a Unified Theory of Urbach's Rule and Exponential Absorption Edges, Physical Review B, vol.5, issue.2, p.594, 1972.
DOI : 10.1103/PhysRevB.5.594

J. J. Dudley, D. L. Crawford, and J. E. Bowers, Temperature dependence of the properties of DBR mirrors used in surface normal optoelectronic devices, IEEE Photonics Technology Letters, vol.4, issue.4, p.311, 1992.
DOI : 10.1109/68.127197

D. Effer and P. J. Etter, An investigation into the apparent purity limit in GaSb, Journal of Physics and Chemistry of Solids, vol.25, issue.5, p.451, 1964.
DOI : 10.1016/0022-3697(64)90117-9

L. Esaki and R. Tsu, Superlattice and Negative Differential Conductivity in Semiconductors, IBM Journal of Research and Development, vol.14, issue.1, p.61, 1970.
DOI : 10.1147/rd.141.0061

K. R. Evans, C. E. Stutz, P. W. Yu, and C. R. Wie, Mass-spectrometric determination of antimony incorporation during III???V molecular beam epitaxy, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.8, issue.2, p.271, 1990.
DOI : 10.1116/1.584825

J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson et al., Quantum Cascade Laser, Science, vol.264, issue.5158, p.553, 1994.
DOI : 10.1126/science.264.5158.553
URL : https://hal.archives-ouvertes.fr/hal-00156810

I. T. Ferguson, D. Oliveira, A. G. , and J. B. , RHEED intensity effects during the growth of InAs, InSb and In(As,Sb) by molecular beam epitaxy, Journal of Crystal Growth, vol.121, issue.3, p.267, 1992.
DOI : 10.1016/0022-0248(92)90137-8

C. G. Fonstad, M. Quillec, and S. Garone, Gallium arsenide antimonide: The possibility of lattice???matched LPE growth on InP substrates, Journal of Applied Physics, vol.49, issue.12, p.5920, 1978.
DOI : 10.1063/1.324558

C. T. Foxon and J. B. , Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique, Surface Science, vol.50, issue.2, p.434, 1975.
DOI : 10.1016/0039-6028(75)90035-7

D. Gallet, M. Gendry, G. Hollinger, A. Overs, G. Jacob et al., Protection of InP EPI-ready wafers by controlled oxide growth, Journal of Electronic Materials, vol.48, issue.12, p.963, 1991.
DOI : 10.1007/BF03030189

. Algaassb, GaInAsSb single-quantum-well broadened waveguide laser diodes, Appl. Phys. Lett, vol.70, p.2931, 1997.

F. Genty, G. Almuneau, L. Chusseau, G. Boissier, J. P. Malzac et al., High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 [micro sign]m surface emitting lasers, Electronics Letters, vol.33, issue.2, p.140, 1997.
DOI : 10.1049/el:19970112

F. Genty, G. Almuneau, N. Bertru, L. Chusseau, P. Grech et al., Molecular beam epitaxy growth and characterizations of AlGaAsSb/AlAsSb Bragg reflectors on InP, Journal of Crystal Growth, vol.183, issue.1-2, p.15, 1998.
DOI : 10.1016/S0022-0248(97)00397-7

J. M. Gérard, High resolution in situ measurement of the surface composition of InxGa1-xAs and InxAl1-xAs at growth temperature, Journal of Crystal Growth, vol.127, issue.1-4, p.981, 1993.
DOI : 10.1016/0022-0248(93)90772-O

L. Goldstein, C. Fortin, C. Starck, A. Plais, J. Jacquet et al., GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs, Electronics Letters, vol.34, issue.3, p.268, 1998.
DOI : 10.1049/el:19980117

M. F. Gratton and J. C. Wolley, Phase diagram and lattice parameter data for the GaAsySb1???y system, Journal of Electronic Materials, vol.31, issue.3, p.455, 1973.
DOI : 10.1007/BF02660149

R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, and R. O. Carlson, Coherent Light Emission From GaAs Junctions, Physical Review Letters, vol.9, issue.9, p.366, 1962.
DOI : 10.1103/PhysRevLett.9.366

J. C. Harmand, A. Kohl, M. Juhel, L. Roux, and G. , Molecular Beam Epitaxy of AlGaAsSb system for 1.55 µm Bragg Mirrors, J. Cryst. Growth, vol.175, p.372, 1997.

A. Haug, Auger recombination in quantum well gallium antimonide, Journal of Physics C: Solid State Physics, vol.20, issue.9, p.1293, 1987.
DOI : 10.1088/0022-3719/20/9/018

M. A. Herman, Semiconductor Superlattice, 1986.

M. A. Herman and H. Sitter, Molecular Beam Epitaxy, Fundamentals and Current Status, 1989.

G. Hollinger, M. P. Besland, D. Gallet, and M. Gendry, Preparation of InP Surfaces for Epitaxial Growth and Regrowth, Proc. MRS Symp, p.139, 1993.
DOI : 10.1063/1.106248

N. Holonyak, . Jr, and S. F. Bevacqua, ) JUNCTIONS, Applied Physics Letters, vol.1, issue.4, p.82, 1962.
DOI : 10.1063/1.1753706

D. L. Huffaker, H. Deng, and D. G. Deppe, 1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser, IEEE Photonics Technology Letters, vol.10, issue.2, p.185, 1998.
DOI : 10.1109/68.655352

Y. Imajo, A. Kasukawa, S. Kashiwa, and H. Okamoto, GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode, Japanese Journal of Applied Physics, vol.29, issue.Part 2, No. 7, p.1130, 1990.
DOI : 10.1143/JJAP.29.L1130

Y. Jiang, M. C. Teich, and W. I. Wang, Forbidden Auger process in strained InGaSb/AlGaSb quantum wells, Applied Physics Letters, vol.57, issue.27, p.2922, 1990.
DOI : 10.1063/1.103731

Y. Jiang, M. C. Teich, and W. I. Wang, The Auger recombination rate is larger in a GaSb quantum well than in bulk GaSb, Journal of Applied Physics, vol.69, issue.2, p.836, 1991.
DOI : 10.1063/1.347318

A. Joullié, Répertoire bibliographique des paramètres physiques des binaires III-V, Rapport interne, 1998.

B. A. Joyce, Molecular beam epitaxy, Vacuum, vol.31, issue.3, p.1637, 1985.
DOI : 10.1016/0042-207X(81)90016-6
URL : https://hal.archives-ouvertes.fr/jpa-00222260

B. A. Joyce, P. J. Dobson, J. H. Neave, K. Woodbridge, J. Zhang et al., RHEED studies of heterojunction and quantum well formation during MBE growth ??? from multiple scattering to band offsets, Surface Science, vol.168, issue.1-3, p.423, 1986.
DOI : 10.1016/0039-6028(86)90873-3

A. Kasukawa, R. Bhat, C. E. Zah, S. A. Schwarz, D. M. Hwang et al., Low threshold current density 1.5 ??m GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by metal organic chemical vapour deposition, Electronics Letters, vol.27, issue.12, p.1063, 1991.
DOI : 10.1049/el:19910660

J. Klem, R. Fisher, T. J. Drummond, H. Morkoç, and A. Y. Cho, Incorporation of Sb in GaAs1???xSbx (x<0.15) by molecular beam epitaxy, Electronics Letters, vol.19, issue.12, p.453, 1983.
DOI : 10.1049/el:19830310

J. Koeth, R. Dietrich, and A. Forchel, GaSb vertical-cavity surface-emitting lasers for the 1.5 ??m range, Applied Physics Letters, vol.72, issue.13, p.1638, 1998.
DOI : 10.1063/1.121138

M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, and M. Okai, Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance, Japanese Journal of Applied Physics, vol.35, issue.Part 1, No. 11, p.5711, 1996.
DOI : 10.1143/JJAP.35.5711

M. P. Krijn, Heterojunction band offsets and effective masses in III-V quaternary alloys, Semiconductor Science and Technology, vol.6, issue.1, p.27, 1991.
DOI : 10.1088/0268-1242/6/1/005

H. Kroemer, A proposed class of heterojunction lasers, Proc. IEEE, p.1782, 1963.

B. Lambert, Y. Toudic, Y. Rouillard, M. Baudet, B. Guenais et al., High reflectivity 1.55 ??m (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy, Applied Physics Letters, vol.64, issue.6, p.690, 1994.
DOI : 10.1063/1.111035

B. Lambert, Y. Toudic, Y. Rouillard, M. Gauneau, M. Baudet et al., High reflectivity 1.55 ??m (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates, High reflectivity 1.55 µm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP subsrates, p.442, 1995.
DOI : 10.1063/1.114050

K. K. Law and D. I. Babic, Effect of layer thickness variations on propagation delay and penetration depth of a quarter-wave distributed Bragg reflector, IEEE Photonics Technology Letters, vol.5, issue.11, p.1294, 1993.
DOI : 10.1109/68.250048

J. L. Lazzari, J. L. Leclercq, P. Grunberg, A. Joulllié, B. Lambert et al., Liquid phase epitaxial growth of AlGaAsSb on GaSb, Journal of Crystal Growth, vol.123, issue.3-4, p.465, 1992.
DOI : 10.1016/0022-0248(92)90608-L

M. Lee, D. J. Nicholas, K. E. Singer, and B. Hamilton, A photoluminescence and Hall???effect study of GaSb grown by molecular???beam epitaxy, Journal of Applied Physics, vol.59, issue.8, p.2895, 1986.
DOI : 10.1063/1.336948

B. F. Lewis, R. Fernandez, A. Madhukar, and J. Grunthaner, Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.4, issue.2, p.560, 1986.
DOI : 10.1116/1.583432

J. A. Lott, L. R. Dawson, E. D. Jones, I. J. Fritz, J. S. Nelson et al., Molecular beam epitaxy and characterization of Al x Ga1-x As y Sb1-y (0.0 ???x ??? 1.0) lattice matched to InAs substrates, Journal of Electronic Materials, vol.26, issue.9, p.989, 1990.
DOI : 10.1007/BF02652926

H. A. Macleod, Thin-film optical filters, 1986.
DOI : 10.1887/0750306882

J. P. Malzac, Modélisation des systèmes optiques multicouches : application aux filtres accordables et aux miroirs de Bragg, Thèse de Doctorat, 1996.

N. M. Margalit, D. I. Babic, K. Steubel, R. P. Mirin, R. L. Maone et al., Submilliamp long wavelength vertical cavity lasers, Electronics Letters, vol.32, issue.18, p.1675, 1996.
DOI : 10.1049/el:19961099

P. Martin, Mesure des indices de réfraction de semiconducteurs III-V en structure guide d'onde, Thèse de Doctorat, 1996.

R. Mirin, J. Ibbeston, K. Nishi, A. Gossard, and J. Bowers, 1.3 ??m photoluminescence from InGaAs quantum dots on GaAs, Applied Physics Letters, vol.67, issue.25, p.3795, 1995.
DOI : 10.1063/1.115386

K. Mochizuki and T. Nishinaga, As and Application of BCF Theory to Study the Alloy Composition, Japanese Journal of Applied Physics, vol.27, issue.Part 1, No. 9, p.1585, 1988.
DOI : 10.1143/JJAP.27.1585

M. J. Mondry, Z. M. Chuang, M. G. Peters, and L. A. Coldren, Low threshold current density 1.5 ??m (In,Ga,Al)As quantum well lasers grown by MBE, Electronics Letters, vol.28, issue.15, p.1471, 1992.
DOI : 10.1049/el:19920936

F. J. Morris, H. Fukui, and J. , A new GaAs, GaP, and GaAsxP1???x vacuum deposition technique using arsine and phosphine gas, Journal of Vacuum Science and Technology, vol.11, issue.2, p.506, 1974.
DOI : 10.1116/1.1317848

A. J. Moseley, J. Thompson, D. J. Robbins, and M. Q. Kearley, High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators, Electronics Letters, vol.25, issue.25, p.1717, 1989.
DOI : 10.1049/el:19891148

A. Mozer, K. M. Romanek, O. Hildebrand, W. Schmid, and M. H. Pilkuhn, Losses in GaInAs(P)/InP and GaAlSb(As)/GaSb lasers - The influence of the split-off valence band, IEEE Journal of Quantum Electronics, vol.19, issue.6, p.913, 1983.
DOI : 10.1109/JQE.1983.1071951

H. Munekata, T. P. Smith, and L. L. Chang, Heteroepitaxy of InAs quantum wells, Journal of Crystal Growth, vol.95, issue.1-4, p.235, 1989.
DOI : 10.1016/0022-0248(89)90390-4

I. J. Murgatroyd, A. G. Norman, and B. G. , layers: Possible relationship to surface reconstruction occurring during layer growth, Journal of Applied Physics, vol.67, issue.5, p.2310, 1990.
DOI : 10.1063/1.345526

M. Naganuma, S. Miyazawa, H. Iwasaki, and J. , Desorption properties of Sb on a GaAs (100) surface, Journal of Vacuum Science and Technology, vol.17, issue.2, p.606, 1980.
DOI : 10.1116/1.570523

K. Nakahara, M. Kondow, T. Kitatani, M. C. Larson, and K. Uomi, 1.3-&#x003BC;m continuous-wave lasing operation in GaInNAs quantum-well lasers, IEEE Photonics Technology Letters, vol.10, issue.4, p.487, 1998.
DOI : 10.1109/68.662569

S. Nakamura, T. Mukai, and M. Senoh, High-Power GaN P-N Junction Blue-Light-Emitting Diodes, Japanese Journal of Applied Physics, vol.30, issue.Part 2, No. 12A
DOI : 10.1143/JJAP.30.L1998

Y. Nakata, T. Fujii, A. Sandhu, Y. Sugiyama, and E. Miyauchi, Growth and characterization of GaAs0.5Sb0.5 lattice-matched to InP by molecular beam epitaxy, Journal of Crystal Growth, vol.91, issue.4, p.655, 1988.
DOI : 10.1016/0022-0248(88)90137-6

M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, . Jr et al., JUNCTIONS, Applied Physics Letters, vol.1, issue.3, p.62, 1962.
DOI : 10.1063/1.1777371

J. H. Neave, B. A. Joyce, P. J. Dobson, and N. Norton, Dynamics of film growth of GaAs by MBE from Rheed observations, Applied Physics A Solids and Surfaces, vol.118, issue.12, p.1, 1983.
DOI : 10.1007/BF00617180

S. Németh, B. Grietens, and G. Borghs, ternaries on the ratio of Sb/As fluxes and on the substrate temperature, Journal of Applied Physics, vol.77, issue.7, p.3552, 1995.
DOI : 10.1063/1.358586

Y. Ohmori, Y. Suzuki, and H. Okamoto, Room Temperature CW Operation of GaSb/AlGaSb MQW Laser Diodes Grown by MBE, Japanese Journal of Applied Physics, vol.24, issue.Part 2, No. 8, p.657, 1985.
DOI : 10.1143/JJAP.24.L657

O. , R. E. Ghiti, and A. , Quantum well lasers, Academic, 1993.

J. S. Osinski, Y. Zou, P. Grodzinski, A. Mathur, and P. D. Dapkus, Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells, IEEE Photonics Technology Letters, vol.4, issue.1, p.10, 1992.
DOI : 10.1109/68.124858

J. M. Palmer, The measurement of transmission, absorption, emission, and reflection, Handbook of Optics, 1995.

M. B. Panish, H. Temkin, and S. Sumski, Gas source MBE of InP and GaxIn1???xPyAs1???y : Materials properties and heterostructure lasers, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.3, issue.2, p.657, 1985.
DOI : 10.1116/1.583208

J. Piprek, H. Wenzel, and G. Stefka, Modeling thermal effects on the light vs. current characteristic of gain-guided vertical-cavity surface-emitting lasers, IEEE Photonics Technology Letters, vol.6, issue.2, p.139, 1994.
DOI : 10.1109/68.275409

Y. Quian, Z. H. Zhu, Y. H. Lo, D. L. Huffaker, D. G. Deppe et al., Low-threshold proton-implanted 1.3-&#x03BC;m vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors, IEEE Photonics Technology Letters, vol.9, issue.7, p.866, 1997.
DOI : 10.1109/68.593326

M. Quillec, L. Goldstein, L. Roux, G. Burgeat, J. Primot et al., Growth conditions and characterization of InGaAs/GaAs strained layers superlattices, Journal of Applied Physics, vol.55, issue.8, p.2904, 1984.
DOI : 10.1063/1.333331

T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax et al., SEMICONDUCTOR MASER OF GaAs, Applied Physics Letters, vol.1, issue.4, p.91, 1962.
DOI : 10.1063/1.1753710

D. Redfield, Effect of Defect Fields on the Optical Absorption Edge, Physical Review, vol.130, issue.3, p.916, 1963.
DOI : 10.1103/PhysRev.130.916

G. Rempe, R. J. Thompson, H. J. Kimble, and R. Lelezari, Measurement of ultralow losses in an optical interferometer, Optics Letters, vol.17, issue.5, p.363, 1992.
DOI : 10.1364/OL.17.000363

H. Sakaki, L. L. Chang, R. Ludeke, C. A. Chang, G. A. Sai-halasz et al., heterojunctions by molecular beam epitaxy, Applied Physics Letters, vol.31, issue.3, p.211, 1977.
DOI : 10.1063/1.89609

A. L. Schawlow and C. H. Townes, Infrared and Optical Masers, Physical Review, vol.112, issue.6, p.1940, 1958.
DOI : 10.1103/PhysRev.112.1940

H. Schweizer, E. Zielinski, S. Hausser, R. Stuber, M. H. Pilkuhn et al., Enhanced T<inf>0</inf>values in GaSb/AlSb multiquantum well heterostructures, IEEE Journal of Quantum Electronics, vol.23, issue.6, p.977, 1987.
DOI : 10.1109/JQE.1987.1073451

H. Soda, K. Iga, C. Kitahara, and Y. Suematsu, GaInAsP/InP Surface Emitting Injection Lasers, Japanese Journal of Applied Physics, vol.18, issue.12
DOI : 10.1143/JJAP.18.2329

A. Sugimura, E. Patzak, and P. Meissner, Reduction of Auger effect by GaSb quantum well lasers in the 1.5 microm wavelength region, Surface Science, vol.174, issue.1-3, p.163, 1986.
DOI : 10.1016/0039-6028(86)90402-4

Y. Sugiyama, T. Inata, T. Fujii, Y. Nakata, S. Muto et al., =<1) Heterostructures, Japanese Journal of Applied Physics, vol.25, issue.Part 2, No. 8, p.648, 1986.
DOI : 10.1143/JJAP.25.L648

C. Tanguy, Optical Dispersion by Wannier Excitons, Physical Review Letters, vol.75, issue.22, p.4090, 1995.
DOI : 10.1103/PhysRevLett.75.4090

W. T. Tsang, F. S. Choa, M. C. Wu, Y. K. Chen, A. M. Sergent et al., Very low threshold single quantum well graded???index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy, Applied Physics Letters, vol.58, issue.23, p.2610, 1991.
DOI : 10.1063/1.104838

W. T. Tsang, The growth of GaAs, AIGaAs, InP and InGaAs by chemical beam epitaxy using group III and V alkyls, Journal of Electronic Materials, vol.35, issue.4, p.235, 1986.
DOI : 10.1007/BF02659637

G. Tuttle, J. Kavanagh, S. Mccalmont, . Al, and . Ga, (Al,Ga)Sb long-wavelength distributed Bragg reflectors, IEEE Photonics Technology Letters, vol.5, issue.12, p.1376, 1993.
DOI : 10.1109/68.262546

F. Urbach, The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids, Physical Review, vol.92, issue.5, p.1324, 1953.
DOI : 10.1103/PhysRev.92.1324

J. A. Venables, G. D. Spiller, and M. Hanbueken, Nucleation and growth of thin films, Reports on Progress in Physics, vol.47, issue.4, p.399, 1984.
DOI : 10.1088/0034-4885/47/4/002

B. Voigtländer, High temperature STM investigations of the growth of Si and Ge on silicon surfaces, 1998.

T. Waho, S. Ogawa, and S. Maruyama, GaAs 1-x Sb x (0.3 < x < 0.9) grown by molecular beam epitaxy, Jpn

J. R. Waterman, B. V. Shanabrook, and R. J. Wagner, Reflection high-energy electron diffraction study of Sb incorporation during molecular-beam epitaxy growth of GaSb and AlSb, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.10, issue.2, p.895, 1992.
DOI : 10.1116/1.586146

J. P. Weber and S. Wang, Effect of layer thickness variations in a distributed-Bragg-reflector mirror on the phase of the reflected light, Optics Letters, vol.15, issue.10, p.526, 1990.
DOI : 10.1364/OL.15.000526

S. H. Wemple, M. Didomenico, and . Jr, Behavior of the Electronic Dielectric Constant in Covalent and Ionic Materials, Physical Review B, vol.3, issue.4, p.1338, 1971.
DOI : 10.1103/PhysRevB.3.1338

E. Yablonovitch and E. O. Kane, Reduction of lasing threshold current density by the lowering of valence band effective mass, Journal of Lightwave Technology, vol.4, issue.5, p.504, 1986.
DOI : 10.1109/JLT.1986.1074751

M. Yano, M. Ashida, A. Kawaguchi, Y. Iwai, and M. Inoue, Molecular-beam epitaxial growth and interface characteristics of GaAsSb on GaAs substrates, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.7, issue.2, p.199, 1989.
DOI : 10.1116/1.584716

P. Liste-des-publications, C. Dans-les-revues-internationales-À, . De, G. Genty, L. Almuneau et al., LECTURE 1) Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 µm emission F, Xth MBE International Conference Proceedings), 1998.

. Gainsb, AlGaAsSb Strained Quantum Well Laser Emitting at 1.55 µm at Room Temperature, Chusseau à paraître dans Semiconductor Science and Technology, 1999.

. High-reflectivity-te-doped-gaassb, G. Genty, L. Almuneau, G. Chusseau, J. Boissier et al., AlAsSb Bragg mirror for 1.5 µm surface emitting lasers F, Salet and J. Jacquet Electronics Letters, vol.33, pp.140-141, 1997.

P. Dans and L. Conferences, INTERNATIONALES 1) AlGaAsSb based on Bragg mirrors and microcavities for 1.55 µm (poster) G, Almuneau Summer School and European Optical Society Topical Meeting on Semiconductor Microcavity Ligth Emitters, 1998.

F. Genty, G. Almuneau, L. Chusseau, A. Wilk, S. Gaillard et al., AlAsSb Bragg mirrors for 1.55 µm emission (poster), Vertical Cavity structures on InP and GaSb with AlGaAsSb Tenth International Conference on Molecular Beam Epitaxy, Paper PT4, 1998.

F. Genty, G. Almuneau, L. Chusseau, A. Wilk, G. Boissier et al., Jacquet 17th General Conference of the Condensed Matter Division) 4) First steps towards 1.3-1.55 µm antimonide Vertical Cavity Semiconductor Lasers (oral), AlGaAsSb based on Bragg mirrors and microcavities for 1.3 µm and 1.55 µm OSA Annual Meeting, Symposium on Advances in Vertical-Cavity Surface Lasers, Paper WZ2, 1997.

A. Almuneau, F. Genty, L. Chusseau, S. Gaillard, N. Bertru et al., ) 6) (Al)GaAsSb/AlAsSb Bragg Mirrors for 1.5 µm use (communication orale), AlAsSb Bragg Mirrors on InP for 1.3 and 1.55µm Vertical Cavity Surface Emitting Lasers, 1996.

P. Dans, L. Conférences, N. G. Almuneau, F. Genty, L. Chusseau et al., Croissance de Multi-puits Quantiques dans le Système (Al)GaInAs sur AlGaAsSb en accord de maille sur InP (oral), pp.28-30, 1997.

G. Miroir-de-bragg-algaassb, F. Almuneau, L. Genty, J. Chusseau, and P. Malzac, AlAsSb sur InP de pouvoir réflecteur =95% à 1,4 µm (poster), Salet et J. Jacquet 6èmes Journées Nationales de Microélectronique et Optoélectronique III-V, Papier µCAV-2, pp.29-31, 1997.

F. Miroir-de-bragg-À-haut-pouvoir-réflecteur-gaassb, G. Genty, J. Almuneau, L. Malzac, C. Chusseau et al., AlAsSb pour lasers à semiconducteurs à cavité verticale émettant à 1,5 µm (poster), Salet et J, 1996.

F. Genty, G. Almuneau, L. Chusseau, S. Gaillard, D. Fournier et al., SEMINAIRE 1) Premiers pas vers des VCSELs antimoniures à 1,3-1,55 µm (oral), Jacquet GDR Microcavités et Cristaux Photoniques

L. Au, R. Toulouse, V. F. De, G. Genty, L. Almuneau et al., CONTRATS 1) Rapport d'activité de recherche n°5, Caractérisation et fabrication de miroir, 1997.

V. F. Genty, G. Almuneau, L. Chusseau, and C. , Rapport d'activité de recherche n°4, Caractérisation et fabrication de miroir Alibert Contrat Alcatel-Alsthom-Recherche, 1997.

V. F. Genty, G. Almuneau, L. Chusseau, and C. , Rapport d'activité de recherche n°,3 Caractérisation et fabrication de miroir Alibert Contrat Alcatel-Alsthom-Recherche, 1997.

V. G. Almuneau, F. Genty, L. Chusseau, and C. , Rapport d'activité de recherche n°2, Caractérisation et fabrication de miroir Alibert Contrat Alcatel-Alsthom-Recherche, 1997.

V. F. De-miroir, G. Genty, L. Almuneau, and C. Chusseau, Caractérisation Alibert Contrat Alcatel-Alsthom-Recherche, 1996.