L. T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Applied Physics Letters, vol.57, issue.10, p.1046, 1990.
DOI : 10.1063/1.103561

J. B. Xia, Electronic structures of zero-dimensional quantum wells, Physical Review B, vol.40, issue.12, pp.12-8500, 1989.
DOI : 10.1103/PhysRevB.40.8500

A. D. Yoffe, Semiconductor quantum dots and related systems: Electronic, optical, luminescence and related properties of low dimensional systems, Advances in Physics, vol.50, issue.1, p.1, 2001.
DOI : 10.1080/00018730010006608

G. C. John and V. A. Singh, Porous silicon: theoretical studies, Physics Reports, vol.263, issue.2, p.93, 1995.
DOI : 10.1016/0370-1573(95)00052-4

C. Bonafos, B. Colombeau, and A. Altibelli, Kinetic study of group IV nanoparticles ion beam synthesized in SiO 2, Nucl. Instr. And Meth. B, vol.178, pp.1-4, 2001.

T. Baron, F. Martin, and P. Mur, Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices, Journal of Crystal Growth, vol.209, issue.4, p.1004, 2000.
DOI : 10.1016/S0022-0248(99)00742-3

H. Seifarth, J. U. Schmidt, and R. Grötzschel, Phenomenological model of reactive r.f.magnetron sputtering of Si in Ar/O 2 atmosphere for the prediction of SiOx thin film stoichiometry from process parameters, Thin Solid Films, vol.389, pp.1-2, 2001.

L. Levoska, M. Tyunina, and S. Leppävuori, Laser ablation deposition of silicon nanostructures, Nanostructured Materials, vol.12, issue.1-4, pp.1-4, 1999.
DOI : 10.1016/S0965-9773(99)00074-4

R. E. Hummel and M. H. Ludwig, Spark-processing ?? A novel technique to prepare lightemitting , nanocrystalline silicon, J. of Lum, vol.68, pp.2-4, 1996.

F. Huisken, B. Kohn, and V. Paillard, Structured films of light-emitting silicon nanoparticles produced by cluster beam deposition, Applied Physics Letters, vol.74, issue.25, pp.25-3776, 1999.
DOI : 10.1063/1.124176

L. Tsybeskov, K. D. Hirschman, and S. P. Duttagupta, Fabrication of Nanocrystalline Silicon Superlattices by Controlled Thermal Recrystallization, physica status solidi (a), vol.176, issue.1, p.69, 1998.
DOI : 10.1002/(SICI)1521-396X(199801)165:1<69::AID-PSSA69>3.0.CO;2-H

B. Garrido, M. Lopez, and C. Garcia, Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2, Journal of Applied Physics, vol.91, issue.2, p.798, 2002.
DOI : 10.1063/1.1423768

M. López, B. Garrido, and C. Bonafos, Phenomenological model of efficient visible emission from Si ion beam synthesised NC in SiO, MRS Spring Meeting, 2000.

E. Wendler, U. Herrmann, and W. Wesch, Structural changes and Si redistribution in Si+ implanted silica glass, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.116, issue.1-4, pp.1-4, 1996.
DOI : 10.1016/0168-583X(96)00068-7

A. Nakajima, Y. Sugita, and K. Kawamura, Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition, Japanese Journal of Applied Physics, vol.35, issue.Part 2, No. 2B, p.189, 1996.
DOI : 10.1143/JJAP.35.L189

M. L. Hitchman and J. Kane, Semi-insulating polysilicon (SIPOS) deposition in a low pressure CVD reactor, Journal of Crystal Growth, vol.55, issue.3, p.485, 1981.
DOI : 10.1016/0022-0248(81)90106-8

R. W. Fathauer, T. George, and A. Ksendzov, Visible luminescence from silicon wafers subjected to stain etches, Applied Physics Letters, vol.60, issue.8, p.995, 1992.
DOI : 10.1063/1.106485

C. Tsai, K. H. Li, and J. Sarathy, Thermal treatment studies of the photoluminescence intensity of porous silicon, Applied Physics Letters, vol.59, issue.22, pp.22-2814, 1991.
DOI : 10.1063/1.105869

M. S. Brandt, H. D. Fuchs, and M. Stutzmann, The origin of visible luminescencefrom ???porous silicon???: A new interpretation, Solid State Communications, vol.81, issue.4, p.307, 1992.
DOI : 10.1016/0038-1098(92)90815-Q

S. M. Prokes and W. E. Carlos, Oxygen defect center red room temperature photoluminescence from freshly etched and oxidized porous silicon, Journal of Applied Physics, vol.78, issue.4, p.2671, 1995.
DOI : 10.1063/1.360716

F. Koch and V. Petrova-koch, Light from Si-nanoparticle systems ??? a comprehensive view, Journal of Non-Crystalline Solids, vol.198, issue.200, pp.198-200, 1996.
DOI : 10.1016/0022-3093(96)00067-1

P. D. Calcott, K. J. Nash, and L. T. Canham, Identification of radiative transitions in highly porous silicon, Journal of Physics: Condensed Matter, vol.5, issue.7, p.91, 1993.
DOI : 10.1088/0953-8984/5/7/003

B. Delley and F. Steigmeier, Quantum confinement in Si nanocrystals, Physical Review B, vol.47, issue.3, p.1397, 1993.
DOI : 10.1103/PhysRevB.47.1397

R. P. Vasquez, A. Madhukar, and J. A. Tanguay, Spectroscopic ellipsometry and x???ray photoelectron spectroscopy studies of the annealing behavior of amorphous Si produced by Si ion implantation, Journal of Applied Physics, vol.58, issue.6, p.2337, 1985.
DOI : 10.1063/1.335956

K. L. Ngai and K. Murayama, Luminescence, transient transport and photoconductivity in chalcogenide glasses, Physica B+C, issue.2, pp.117-118118, 1983.

S. M. Prokes, O. J. Glembocki, and V. M. Bermudez, excitation: An alternate mechanism for porous Si photoluminescence, Physical Review B, vol.45, issue.23, p.13788, 1992.
DOI : 10.1103/PhysRevB.45.13788

M. Sacilotti, B. Champagnon, and P. Abraham, Properties of type II interfaces in semiconductor heterojunctions, application to porous silicon, Journal of Luminescence, vol.57, issue.1-6, pp.1-6, 1993.
DOI : 10.1016/0022-2313(93)90102-S

G. G. Qin and Y. Q. Jia, Mechanism of the visible luminescence in porous silicon, Solid State Communications, vol.86, issue.9, p.559, 1993.
DOI : 10.1016/0038-1098(93)90139-E

F. Koch, V. Petrova-koch, and T. Muschik, The luminescence of porous Si: the case for the surface state mechanism, Journal of Luminescence, vol.57, issue.1-6, pp.1-6271, 1993.
DOI : 10.1016/0022-2313(93)90145-D

S. Veprek, T. Wirschem, and M. Rückschlob, Localization phenomena and photoluminescence in nc-Si and nc-Si/a-SiO2 composites, Eds. Microcrystalline and Nanocrystalline Semiconductors MRS Symp. Proc, p.99, 1995.

Y. Kanemitsu, H. Uto, and Y. Matsumoto, Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites, Physical Review B, vol.48, issue.4, p.2827, 1993.
DOI : 10.1103/PhysRevB.48.2827

S. M. Prokes, Light emission in thermally oxidized porous silicon: Evidence for oxide???related luminescence, Applied Physics Letters, vol.62, issue.25, pp.25-3244, 1993.
DOI : 10.1063/1.109087

Y. Kanemitsu, T. Ogawa, and K. Shiraishi, Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shell, Physical Review B, vol.48, issue.7, p.4883, 1993.
DOI : 10.1103/PhysRevB.48.4883

T. S. Iwayama, N. Kurumado, and D. E. Hole, Optical properties of silicon nanoclusters fabricated by ion implantation, Journal of Applied Physics, vol.83, issue.11, p.6018, 1998.
DOI : 10.1063/1.367469

M. V. Wolkin, J. Jorne, and P. M. Fauchet, Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen, Physical Review Letters, vol.82, issue.1, p.197, 1999.
DOI : 10.1103/PhysRevLett.82.197

Y. Kanemitsu, Efficient light emission from crystalline and amorphous silicon nanostructures, Journal of Luminescence, vol.100, issue.1-4, pp.1-4, 2002.
DOI : 10.1016/S0022-2313(02)00425-8

S. P. Pogossian, L. Vescan, and A. Vonsovici, High-confinement SiGe low-loss waveguides for Si-based optoelectronics, Applied Physics Letters, vol.75, issue.10, p.1440, 1999.
DOI : 10.1063/1.124719

G. Masini, L. Colace, and G. Assanto, Si based optoelectronics for communications, Materials Science and Engineering: B, vol.89, issue.1-3, pp.1-3, 2002.
DOI : 10.1016/S0921-5107(01)00781-4

T. P. Pearsall, H. Temkin, and J. C. Bean, Avalanche gain in Ge<inf>x</inf>Si<inf>1-x</inf>/Si infrared waveguide detectors, IEEE Electron Device Letters, vol.7, issue.5, p.330, 1986.
DOI : 10.1109/EDL.1986.26390

G. Masini, L. Colace, and G. Assanto, Germanium on silicon pin photodiodes for the near infrared, Electronics Letters, vol.36, issue.25, pp.25-2095, 2000.
DOI : 10.1049/el:20001448

D. J. Dimaria, J. R. Kirtley, and E. J. Pakulis, Electroluminescence studies in silicon dioxide films containing tiny silicon islands, Journal of Applied Physics, vol.56, issue.2, p.401, 1984.
DOI : 10.1063/1.333979

A. Richter, P. Steiner, and F. Kozlowski, Current-induced light emission from a porous silicon device, IEEE Electron Device Letters, vol.12, issue.12, pp.12-691, 1991.
DOI : 10.1109/55.116957

P. Steiner, F. Kozlowski, and W. Lang, Light???emitting porous silicon diode with an increased electroluminescence quantum efficiency, Applied Physics Letters, vol.62, issue.21, p.2700, 1993.
DOI : 10.1063/1.109236

A. Loni, A. J. Simons, and T. I. Cox, Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation, Electronics Letters, vol.31, issue.15, pp.15-1288, 1995.
DOI : 10.1049/el:19950831

B. Gelloz and N. Koshida, Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode, Journal of Applied Physics, vol.88, issue.7, p.4319, 2000.
DOI : 10.1063/1.1290458

L. T. Canham, T. I. Cox, and A. Loni, Progress towards silicon optoelectronics using porous silicon technology, Applied Surface Science, vol.102, p.436, 1996.
DOI : 10.1016/0169-4332(96)00094-3

G. G. Qin, Y. M. Huang, and B. Q. Zong, A comparison study of electroluminescence from Au, Si and Au/porous Si diodes, Superlatt. and Microstruct, p.387, 1994.

N. Lalic and J. Linros, Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide, Journal of Luminescence, vol.80, issue.1-4, pp.1-4, 1999.
DOI : 10.1016/S0022-2313(98)00109-4

J. De-la-torre, A. Souifi, and A. Poncet, Optical properties of silicon nanocrystal LEDs, Physica E: Low-dimensional Systems and Nanostructures, vol.16, issue.3-4, pp.3-4, 2003.
DOI : 10.1016/S1386-9477(02)00612-4

L. Pavesi, L. Dal-negro, and G. Franzó, Optical gain in silicon nanocrystals, Silicon-based and Hybrid Optoelectronics III, p.440, 2000.
DOI : 10.1117/12.426932

L. Dal-negro, M. Cazzanelli, and N. Daldosso, Stimulated emission in plasmaenhanced chemical vapour deposited silicon nanocrystals, pp.3-4, 2003.

P. Bettoti, M. Cazzanelli, and L. Dal-negro, Silicon nanostructures for photonics, Journal of Physics: Condensed Matter, vol.14, issue.35, pp.35-8253, 2002.
DOI : 10.1088/0953-8984/14/35/305

S. Coffa, S. Libertino, and G. Coppola, Feasibility analysis of laser action in erbium-doped silicon waveguides, IEEE Journal of Quantum Electronics, vol.36, issue.10, p.1206, 2000.
DOI : 10.1109/3.880662

A. J. Kenyon, Recent developments in rare-earth doped materials for optoelectronics, Progress in Quant. Electron, pp.4-5, 2002.
DOI : 10.1016/S0079-6727(02)00014-9

G. Franzó, G. Priolo, and S. Coffa, Room-temperature electroluminescence from Erdoped crystalline Si, Appl. Phys. Lett, vol.64, pp.17-2235, 1994.

B. Zheng, J. Michel, and F. Y. Ren, Room???temperature sharp line electroluminescence at ??=1.54 ??m from an erbium???doped, silicon light???emitting diode, Applied Physics Letters, vol.64, issue.21, p.2842, 1994.
DOI : 10.1063/1.111977

L. Friedman, R. A. Soref, and G. Sun, Silicon-based interminiband infrared laser, Journal of Applied Physics, vol.83, issue.7, p.3480, 1998.
DOI : 10.1063/1.366559

L. Heikkilä, T. Kuusela, and H. P. Hedman, Laser type of spectral narrowing in electroluminescent Si/SiO2superlattices prepared by low-pressure chemical vapour deposition, Superlattices and Microstructures, vol.26, issue.3, p.157, 1999.
DOI : 10.1006/spmi.1999.0769

M. Nayfeh, N. Barry, and J. Therrien, Stimulated blue emission in reconstituted films of ultrasmall silicon nanoparticles, Applied Physics Letters, vol.78, issue.8, p.1131, 2001.
DOI : 10.1063/1.1347398

]. R. Soref and R. Bennet, Electrooptical effects in silicon, Etude de propriétés optoélectroniques de structures et composants à base de nanocristaux de Si, p.123, 1987.
DOI : 10.1109/JQE.1987.1073206

G. Cocurullo, M. Iodice, and I. Rendina, Silicon thermooptical micromodulator with 700-kHz -3-dB bandwidth, IEEE Photonics Technology Letters, vol.7, issue.4, p.363, 1995.
DOI : 10.1109/68.376803

A. Polman, R. G. Elliman, and . Pavesi, Towards the first Silicon Laser, p.209, 2003.

C. Delerue, G. Allan, and M. Lannoo, Optical band gap of Si nanoclusters, Journal of Luminescence, vol.80, issue.1-4, pp.1-465, 1999.
DOI : 10.1016/S0022-2313(98)00071-4

A. Zunger and L. W. Wang, Theory of silicon nanostructures, Applied Surface Science, vol.102, p.350, 1996.
DOI : 10.1016/0169-4332(96)00078-5

Y. Kanemitsu and S. Okamoto, Photoluminescence mechanism in surface-oxidized silicon nanocrystals, Physical Review B, vol.55, issue.12, pp.12-7375, 1997.
DOI : 10.1103/PhysRevB.55.R7375

J. I. Pankove, Optical Processes in Semiconductors " 1 er ed, 1975.

Y. P. Varshni, Temperature dependence of the energy gap in semiconductors, Physica, p.149, 1967.

. N. Md, S. Islam, and . Kumar, Influence of surface states on the photoluminescence from silicon nanostructures, J. Appl. Phys, vol.93, issue.3, p.1753, 2003.

T. Suemoto, K. Tanaka, and A. Nakajima, Observation of phonon structures in porous Si luminescence, Physical Review Letters, vol.70, issue.23, p.3659, 1993.
DOI : 10.1103/PhysRevLett.70.3659

H. Yorikawa and S. Muramatsu, Analysis of photoluminescence from porous silicon: Particle size distribution, Journal of Applied Physics, vol.84, issue.6, p.3354, 1998.
DOI : 10.1063/1.368492

T. Matsumoto, J. Suzuki, and M. Ohnuma, Evidence of quantum size effect in nanocrystalline silicon by optical absorption, Physical Review B, vol.63, issue.19, p.195322, 2001.
DOI : 10.1103/PhysRevB.63.195322

J. Von-behren, T. Van-buuren, and M. Zacharias, Quantum confinement in nanoscale silicon: The correlation of size with bandgap and luminescence, Solid State Communications, vol.105, issue.5, p.317, 1998.
DOI : 10.1016/S0038-1098(97)10099-0

K. Kimura and S. Iwasaki, Vibronic Fine Structure Found in the Blue Luminescence from Silicon Nanocolloids, Japanese Journal of Applied Physics, vol.38, issue.Part 1, No. 2A, p.609, 1999.
DOI : 10.1143/JJAP.38.609

A. Mimura, M. Fujii, and S. Hayashi, Quenching of photoluminescence from Si nanocrystals caused by boron doping, Solid State Communications, vol.109, issue.9, p.561, 1999.
DOI : 10.1016/S0038-1098(98)00632-2

C. Busseret, Etudes optiques et électriques des proprietés électroniques de nanocristaux de silicium pour composants mono-électroniques, Thèse LPM. Lyon : INSA de Lyon, 2001.

L. Skuja, Optically active oxygen-deficiency-related centers in amorphous silicon dioxide, Journal of Non-Crystalline Solids, vol.239, issue.1-3, pp.1-3, 1998.
DOI : 10.1016/S0022-3093(98)00720-0

S. M. Prokes, Light emission in thermally oxidized porous silicon: Evidence for oxide???related luminescence, Applied Physics Letters, vol.62, issue.25, pp.25-3244, 1993.
DOI : 10.1063/1.109087

T. Suemoto, K. Tanaka, and A. Nakajima, Interpretation of the temperature dependence of the luminescence intensity, lifetime, and decay profiles in porous Si, Physical Review B, vol.49, issue.16, p.11005, 1994.
DOI : 10.1103/PhysRevB.49.11005

B. Garrido, M. Lopez, and O. Gonzalez, Correlation between structural and optical properties of Si nanocrystals embedded in SiO2: The mechanism of visible light emission, Applied Physics Letters, vol.77, issue.20, pp.20-3143, 2000.
DOI : 10.1063/1.1325392

Y. Kanemitsu, Photoluminescence spectrum and dynamics in oxidized silicon nanocrystals: A nanoscopic disorder system, Physical Review B, vol.53, issue.20, p.2013515, 1996.
DOI : 10.1103/PhysRevB.53.13515

S. M. Sze, Physics of Semiconductor Devices " 2 e ed, 1981.

H. Z. Song and X. M. Bao, sfilm and its multiple mechanisms, Physical Review B, vol.55, issue.11, p.6988, 1997.
DOI : 10.1103/PhysRevB.55.6988

T. S. Iwayama, N. Kurumado, and D. Hole, Optical properties of silicon nanoclusters fabricated by ion implantation, Journal of Applied Physics, vol.83, issue.11, p.6018, 1998.
DOI : 10.1063/1.367469

Y. Kanemitsu, Excitons in silicon quantum structures, Journal of Luminescence, vol.83, issue.84, pp.83-84, 1999.
DOI : 10.1016/S0022-2313(99)00112-X

S. T. Chou, J. H. Tsai, and B. C. Sheu, The photoluminescence in Si+-implanted SiO2 films with rapid thermal anneal, Journal of Applied Physics, vol.83, issue.10, p.5394, 1998.
DOI : 10.1063/1.367368

B. E. Deal and A. S. Grove, General Relationship for the Thermal Oxidation of Silicon, Journal of Applied Physics, vol.36, issue.12, p.3770, 1965.
DOI : 10.1063/1.1713945

H. Heidemeyer, C. Single, and F. Zhou, Self-limiting and pattern dependent oxidation of silicon dots fabricated on silicon-on-insulator material, Journal of Applied Physics, vol.87, issue.9, p.4580, 2000.
DOI : 10.1063/1.373105

K. C. Scheer, R. A. Rao, and R. Muralidhar, Thermal oxidation of silicon nanocrystals in O2 and NO ambient, Journal of Applied Physics, vol.93, issue.9, p.5637, 2003.
DOI : 10.1063/1.1565172

J. Wang, B. Zou, and M. A. Sayed, Comparison between the polarized Fourier-transform infrared spectra of aged porous silicon and amorphous silicon dioxide films on Si (100) surface, Journal of Molecular Structure, vol.508, issue.1-3, pp.1-3, 1999.
DOI : 10.1016/S0022-2860(99)00003-4

B. J. Hinds, F. Wang, and D. M. Wolfe, Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiO 2 matrix, J. of Non-Cryst. Sol, issue.1, pp.227-230, 1998.

A. Richter, P. Steiner, and F. Kozlowski, Current-induced light emission from a porous silicon device, IEEE Electron Device Letters, vol.12, issue.12, pp.12-691, 1991.
DOI : 10.1109/55.116957

N. Koshida and H. Koyama, Visible electroluminescence from porous silicon, Applied Physics Letters, vol.60, issue.3, p.347, 1992.
DOI : 10.1063/1.106652

J. Kramer, P. Seitz, and E. F. Steigmeier, Light-emitting devices in industrial CMOS technology, Sensors and Actuators A: Physical, vol.37, issue.38, p.527, 1993.
DOI : 10.1016/0924-4247(93)80091-T

P. Steiner, F. Kozlowski, and M. Wielinska, Enhanced Blue-Light Emission from an Indium-Treated Porous Silicon Device, Japanese Journal of Applied Physics, vol.33, issue.Part 1, No. 11, p.6075, 1994.
DOI : 10.1143/JJAP.33.6075

C. Peng, P. M. Fauchet, and K. D. Hirschmann, Carrier Transport in Porous Silicon Light-Emitting Diodes, MRS Proceedings, vol.358
DOI : 10.1063/1.110411

L. Pavesi, Will silicon be the photonic material of the third millenium? *, Journal of Physics: Condensed Matter, vol.15, issue.26, pp.26-1169, 2003.
DOI : 10.1088/0953-8984/15/26/201

L. Tsybeskov and S. P. Duttagupta, Stable and efficient electroluminescence from a porous silicon???based bipolar device, Applied Physics Letters, vol.68, issue.15, pp.15-2058, 1996.
DOI : 10.1063/1.116302

L. B. Valdés and . Proc, Resistivity measurements on Ge for transistors, IRC, vol.42, p.420, 1954.

D. J. Dimaria, D. W. Dong, and C. Falcony, Charge transport and trapping phenomena in off???stoichiometric silicon dioxide films, Journal of Applied Physics, vol.54, issue.10, p.5801, 1983.
DOI : 10.1063/1.331806

E. Kameda, T. Matsuda, and Y. Emura, Study of the current?voltage characteristics in MOS capacitors with Si-implanted gate oxide, Solid State Elect, p.555, 1999.

E. Kameda, T. Matsuda, and Y. Emura, Fowler?Nordheim tunneling in MOS capacitors with Si-implanted SiO 2 , Solid State Elect, p.2105, 1998.

K. Luterova, I. Pelant, and J. Valenta, Red electroluminescence in Si+-implanted sol???gel-derived SiO2 films, Applied Physics Letters, vol.77, issue.19, p.2952, 2000.
DOI : 10.1063/1.1323551

L. Skuja, Optically active oxygen-deficiency-related centers in amorphous silicon dioxide, Journal of Non-Crystalline Solids, vol.239, issue.1-3, pp.1-3, 1998.
DOI : 10.1016/S0022-3093(98)00720-0

S. T. Chou, J. H. Tsai, and B. C. Sheu, The photoluminescence in Si+-implanted SiO2 films with rapid thermal anneal, Journal of Applied Physics, vol.83, issue.10, p.5394, 1998.
DOI : 10.1063/1.367368

S. M. Prokes, Light emission in thermally oxidized porous silicon: Evidence for oxide???related luminescence, Applied Physics Letters, vol.62, issue.25, pp.25-3244, 1993.
DOI : 10.1063/1.109087

O. V. Brodovoy, V. A. Skryshevsky, and V. A. Brodovoy, Recombination properties of electronic states in porous silicon, Solid-State Electronics, vol.46, issue.1, p.83, 2002.
DOI : 10.1016/S0038-1101(01)00260-X

Y. P. Varshni, Temperature dependence of the energy gap in semiconductors, Physica, p.149, 1967.

C. Delerue, G. Allan, and M. Lannoo, Optical band gap of Si nanoclusters, Journal of Luminescence, vol.80, issue.1-4, pp.1-465, 1999.
DOI : 10.1016/S0022-2313(98)00071-4

L. Skuja, Optically active oxygen-deficiency-related centers in amorphous silicon dioxide, Journal of Non-Crystalline Solids, vol.239, issue.1-3, pp.1-3, 1998.
DOI : 10.1016/S0022-3093(98)00720-0

S. T. Chou, J. H. Tsai, and B. C. Sheu, The photoluminescence in Si+-implanted SiO2 films with rapid thermal anneal, Journal of Applied Physics, vol.83, issue.10, p.5394, 1998.
DOI : 10.1063/1.367368

J. I. Pankove, Optical Processes in Semiconductors " 1 er ed, 1975.

S. M. Sze, Physics of Semiconductor Devices " 2 e ed, 1981.

F. P. Romstad and E. Veje, Experimental determination of the electrical band-gap energy of porous silicon and the band offsets at the porous silicon/crystalline silicon heterojunction, Physical Review B, vol.55, issue.8, p.5220, 1997.
DOI : 10.1103/PhysRevB.55.5220

P. Balk, The Si-SiO2 System " (Material science monographs : 32, 1988.

J. Singh, Semiconductor Optoelectronics Singapore : McGraw-Hill, 1995.

. Techniques, QUANTIX : Simulateur Poisson-Schrödinger-2D. Disponible sur < http://www.insa-lyon, 2003.

D. B. Kao, J. P. Mcvittie, and W. D. Nix, Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides, IEEE Transactions on Electron Devices, vol.35, issue.1, p.25, 1988.
DOI : 10.1109/16.2412

M. Sánchez-del-río and R. J. Dejus, <title>XOP: a multiplatform graphical user interface for synchrotron radiation spectral and optics calculations</title>, Materials, Manufacturing, and Measurement for Synchrotron Radiation Mirrors, p.148, 1997.
DOI : 10.1117/12.295554