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Etudes des propriétés opto-électroniques de structures et de composants à base de nanostructures de Si

Abstract : Silicon is the base semiconductor for microelectronics in particular because of the high integration levels and low productions costs that can be achieved. However, at the present time, the size reduction of components is confronted to serious problems since according to predictions, in the next 10 years the transmission lengths will exceed the 90km in one single chip and the transmission of information will represent a serious handicap because of signal propagation delays and overheating. In this framework, a 100% silicon based microphotonics seems to be a a very interessting option since to date most of the photonics devices neccesary to develop this technology like optical waveguides, fast switches and optical modulators or even tunable optical filters has been demonstrated. However, a major element for the development of this sector which is obtaining a silicon based effective light source is a serious challenge to overcome. This work concerns the study of the optoelectronic properties of silicon nanocrystals (nc-Si) fabricated by ion implantation at University of Barcelona or by LPCVD at CEA-LETI in Grenoble for obtaining reliable light emitting devices (DEL). Thus, the luminescence of nc-Si will be discussed within the framework of the various postulated models. Besides, we will discuss the several approches used to obtain DELs and we will present a light emitting device operating in a “cold” carrier injection regime with low polarisation voltage which avoids the electroluminescent properties's degradation. Finally, the development of the photocurrent technique that has permitted to determine in a relatively simple way the absorption spectrum of nc-Si will be presented.
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https://tel.archives-ouvertes.fr/tel-00006823
Contributor : Jorge de la Torre <>
Submitted on : Monday, September 6, 2004 - 4:02:30 PM
Last modification on : Wednesday, July 8, 2020 - 12:42:08 PM
Long-term archiving on: : Friday, April 2, 2010 - 8:25:53 PM

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  • HAL Id : tel-00006823, version 1

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Jorge de la Torre. Etudes des propriétés opto-électroniques de structures et de composants à base de nanostructures de Si. Matière Condensée [cond-mat]. INSA de Lyon, 2003. Français. ⟨tel-00006823⟩

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