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Transistor Bipolaire à Hététrojonction GaInAs/InP pour circuits ultra-rapides : structure, fabrication et caractérisation

Mathias Kahn 1
Abstract : THE DEVELOPPEMENT OF OPTICAL NETWORKS IN THE LAST DECADE HAS MADE POSSIBLE THE STRONG INCREASE IN WORLWIDE TELECOMUNICATIONS. PROCESSING OF HIGH-BITRATES SIGNALS (ABOVE 40 GB/S) AT FIBER INPUT AND OUTPUT REQUIRES NUMERICAL CIRCUITS WORKING VERY HIGH FREQUENCIES, AND THUS BASED ON VARY FAST ELECTRONICS DEVICES WITH CUTOFF FREQUENCIES OF 150 GHZ OR MORE. III-V SEMICONCTOR MATERIALS HAVE REMARKABLE PHYSICAL PROPERTIES, MAKING INP BASE HBT ONE OF THE FASTEST TRANSITOR AVAILABLE AT THIS TIME. THIS DEVICE ALLOWS DESIGN OF CIRCUITS WORKING AT THE VERY HIGH FREQUENCIES REQUIRED IN OPTICAL COMMUNICATIONS APPLICATIONS. FABRICATION OF GAINAS/INP HBT INVOLVES A LARGE NUMBER OF DESIGN AND PROCESSING STEPS (EPITAXIAL GROWTH, CLEANROOM PROCESSING, CARACTERISATION,...), AND REQUIERS UNDERSTANDING OF VARIOUS PHYSICAL EFFECTS DETERMINING THE DEVICE BEHAVIOR. IN THIS WORK, WE STUDY THE MAIN PHYSICAL EFFECTS INVOLVED IN HBT BEHAVIOR, AND WE CARRY OUT OPTIMISATION OF THE DEVICE.
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https://tel.archives-ouvertes.fr/tel-00006792
Contributor : Mathias Kahn <>
Submitted on : Wednesday, September 1, 2004 - 2:58:38 PM
Last modification on : Friday, October 23, 2020 - 4:38:12 PM
Long-term archiving on: : Friday, April 2, 2010 - 8:41:18 PM

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  • HAL Id : tel-00006792, version 1

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Mathias Kahn. Transistor Bipolaire à Hététrojonction GaInAs/InP pour circuits ultra-rapides : structure, fabrication et caractérisation. Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2004. Français. ⟨tel-00006792⟩

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