A. Table, Results for InAs Elastic properties are the main problem of all potentials (surfaces may be a bigger issue but very little data are available) Smith (GaAs) and Ashu (InAs) have almost no angular dependence of the energy (c 2 << d 2 ) This implies that the energy of an atom with four nearest-neighbors at a given distance will be the same whether these four FIG. A.2: Change in the elastic constants with temperature

. Nakamura, do not get the right bond length and cohesive energy for the ZnS structure Therefore they were not included in our study Smith and Ashu committed the same error: c is much smaller than d, which leads to almost no angular dependence and c 44 and Young's modulus are 0. This makes them useless: they get an elastic behavior closer to rubber than to III-V semiconductors. For GaAs, Sayed gives the best results for elasticity against Albe as the latter has a too weak c 44 . They give the same results for dimers but Sayed does not describe other structures very well, the " graphitic " structure for instance in very close in energy to the ZnS ground state. No comparison being possible for surfaces it is not really possible to decide which potential is best. For InAs, once Ashu is removed only one potential (Nordlund) remains. There are two " useable " potentials for GaAs and one only for InAs and AlAs, the 6 remaining potentials: Film stress-related vacancy supersaturation in silicon under low pressure chemical vapor deposited silicon nitride films, J. App. Phys, p.4914, 1988.

M. Ajayan, Nanotubes from Carbon, Chemical Reviews, vol.99, issue.7, p.1787, 1999.
DOI : 10.1021/cr970102g

K. Albe, J. Nordlund, A. Nord, and . Kuronen, Modeling of compound semiconductors: Analytical bond-order potential for Ga, As, and GaAs, Physical Review B, vol.66, issue.3, p.35205, 2002.
DOI : 10.1103/PhysRevB.66.035205

M. A. Laham and K. Raghavachari, Theoretical study of small gallium arsenide clusters, Chemical Physics Letters, vol.187, issue.1-2, p.13, 1991.
DOI : 10.1016/0009-2614(91)90477-Q

G. Amar, F. Family, and P. M. Lam, Dynamic scaling of the island-size distribution and percolation in a model of submonolayer molecular-beam epitaxy, Physical Review B, vol.50, issue.12, 1994.
DOI : 10.1103/PhysRevB.50.8781

J. Antonelli and . Bernholc, Pressure effects on self-diffusion in silicon, Physical Review B, vol.40, issue.15, p.10643, 1989.
DOI : 10.1103/PhysRevB.40.10643

E. Antonelli, D. J. Kaxiras, and . Chadi, Vacancy in Silicon Revisited: Structure and Pressure Effects, Physical Review Letters, vol.81, issue.10, p.2088, 1998.
DOI : 10.1103/PhysRevLett.81.2088

J. Asaro and W. A. , Interface morphology development during stress corrosion cracking: Part I. Via surface diffusion, Metallurgical Transactions, vol.28, issue.7, p.1789, 1972.
DOI : 10.1007/BF02642562

A. Ashu, J. H. Jefferson, A. G. Cullis, W. E. Hagston, and C. R. Whitehouse, Molecular dynamics simulation of (100)InGaAs/GaAs strained-layer relaxation processes, Journal of Crystal Growth, vol.150, p.176, 1995.
DOI : 10.1016/0022-0248(95)80202-N

J. Aziz, Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms, Applied Physics Letters, vol.70, issue.21, p.2810, 1997.
DOI : 10.1063/1.119066

J. Aziz, Stress effects on defects and dopant diffusion in Si, Materials Science in Semiconductor Processing, vol.4, issue.5, p.397, 2001.
DOI : 10.1016/S1369-8001(01)00014-2

T. Balamane, W. A. Halicioglu, and . Tiller, Comparative study of silicon empirical interatomic potentials, Physical Review B, vol.46, issue.4, p.2250, 1992.
DOI : 10.1103/PhysRevB.46.2250

A. Barabási, Self-assembled island formation in heteroepitaxial growth, Applied Physics Letters, vol.70, issue.19, p.2565, 1997.
DOI : 10.1063/1.118920

M. Barnett, The precise evaluation of derivatives of the anisotropic elastic Green's functions, Physica Status Solidi (b), vol.44, issue.2, p.741, 1972.
DOI : 10.1002/pssb.2220490238

H. Baughman, A. A. Zakhidov, and W. , Carbon Nanotubes--the Route Toward Applications, Science, vol.297, issue.5582, p.787, 2002.
DOI : 10.1126/science.1060928

W. Becker and . Döring, Kinetische Behandlung der Keimbildung in übersättingten Dämpfen, Annalen der Physik, vol.24, p.719, 1935.

T. Benabbas, Y. Androussi, and A. Lefebvre, A finite-element study of strain fields in vertically aligned InAs islands in GaAs, Journal of Applied Physics, vol.86, issue.4, p.1945, 1999.
DOI : 10.1063/1.370991

J. S. Blakemore, Semiconducting and other major properties of gallium arsenide, Journal of Applied Physics, vol.53, issue.10
DOI : 10.1063/1.331665

M. L. Bouville, J. M. Falk, and . Millunchick, Pit nucleation in compound semiconductor thin films, MRS Proceedings, vol.618, p.24, 2004.
DOI : 10.1063/1.126353

J. M. Bouville, M. L. Millunchick, and . Falk, Pit nucleation in the presence of 3D islands during heteroepitaxial growth, submitted to Phys, Rev. B, 2004.

M. L. Bouville, K. Falk, and . Garikipati, Atomistic and continuum studies of stressdefect interactions in silicon, 2004.

D. Bouville, K. De-graeve, M. Garikipati, and . Falk, The elastic center of contraction revisited: Perspectives from elasticity and atomistic modeling, 2004.

W. Brenner, Empirical potential for hydrocarbons for use in simulating the chemical vapor deposition of diamond films, Physical Review B, vol.42, issue.15, p.9458, 1990.
DOI : 10.1103/PhysRevB.42.9458

A. Burenkov, ); translation: soviet physics solid state 15, Fizika tverdogo tela, vol.15, pp.1757-1175, 1973.

M. E. Chaudhary and . Law, The stress assisted evolution of point and extended defects in silicon, Journal of Applied Physics, vol.82, issue.3, p.1138, 1997.
DOI : 10.1063/1.365880

M. Chen, D. E. Jesson, S. J. Pennycook, T. Thundat, and R. J. Warmack, strained films, Applied Physics Letters, vol.66, issue.1, p.34, 1995.
DOI : 10.1063/1.114172

J. M. Chokshi, Cooperative nucleation leading to ripple formation in InGaAs/GaAs films, Applied Physics Letters, vol.76, issue.17, p.2382, 2000.
DOI : 10.1063/1.126353

M. Chokshi and J. M. Bouville, Pit formation during the morphological evolution of InGaAs/GaAs, Journal of Crystal Growth, vol.236, issue.4, p.563, 2002.
DOI : 10.1016/S0022-0248(02)00862-X

E. B. Cowern, P. C. Zalm, P. Van-der-sluis, D. J. Gravesteijn, and W. B. De-boer, Diffusion in strained Si(Ge), Diffusion in strained Si(Ge), p.2585, 1994.
DOI : 10.1103/PhysRevLett.72.2585

G. Cullis, D. J. Robbins, A. J. Pidduck, and P. W. , The characteristics of strain-modulated surface undulations formed upon epitaxial Si1???xGex alloy layers on Si, Journal of Crystal Growth, vol.123, issue.3-4, p.333, 1992.
DOI : 10.1016/0022-0248(92)90593-8

P. Dannefaer, D. Mascher, and . Kerr, Monovacancy Formation Enthalpy in Silicon, Physical Review Letters, vol.56, issue.20, p.2195, 1986.
DOI : 10.1103/PhysRevLett.56.2195

M. S. Daw, W. Windl, N. N. Carlson, M. Laudon, and M. P. Masquelier, Effect of stress on dopant and defect diffusion in Si: A general treatment, Physical Review B, vol.64, issue.4, pp.45205-45206, 2001.
DOI : 10.1103/PhysRevB.64.045205

H. Dederichs and K. Schröder, Anisotropic diffusion in stress fields, Physical Review B, vol.17, issue.6, p.2524, 1978.
DOI : 10.1103/PhysRevB.17.2524

M. Deng and . Krishnamurthy, Self-Assembly of Quantum-Dot Molecules: Heterogeneous Nucleation of SiGe Islands on Si(100), Physical Review Letters, vol.81, issue.7, p.1473, 1998.
DOI : 10.1103/PhysRevLett.81.1473

S. Dresselhaus and H. Dai, Carbon Nanotubes: Continued Innovations and Challenges, MRS Bulletin, vol.29, issue.04, p.237, 2004.
DOI : 10.1142/9781860943799

J. Eggleston and P. W. , Ordered growth of nanocrystals via a morphological instability, Applied Physics Letters, vol.80, issue.2, p.306, 2002.
DOI : 10.1063/1.1429757

D. Eshelby, Elastic inclusions and inhomogeneities, page 89 of J

P. Ewald, Die Berechnung optischer und elektrostatischer Gitterpotentiale, Annalen der Physik, vol.54, issue.3, p.253, 1921.
DOI : 10.1002/andp.19213690304

M. Fahey, P. B. Griffin, and J. D. , Point defects and dopant diffusion in silicon, Reviews of Modern Physics, vol.61, issue.2, p.289, 1989.
DOI : 10.1103/RevModPhys.61.289

. Parker, In situ HREM irradiation study of point-defect clustering in mbe-grown strained Si 1-x Ge x =(001)Si structures, Phys. Rev. B, vol.61, p.10336, 2000.

R. Frankl and J. A. , Nucleation on substrates from the vapour phase, Advances in Physics, vol.119, issue.3, p.409, 1970.
DOI : 10.1016/0042-207X(66)90349-6

H. Gao and W. D. Nix, SURFACE ROUGHENING OF HETEROEPITAXIAL THIN FILMS, Annual Review of Materials Science, vol.29, issue.1, p.173, 1999.
DOI : 10.1146/annurev.matsci.29.1.173

L. Garikipati and M. D. Bassman, A lattice-based micromechanical continuum formulation for stress-driven mass transport in polycrystalline solids, Journal of the Mechanics and Physics of Solids, vol.49, issue.6, p.1209, 2001.
DOI : 10.1016/S0022-5096(00)00081-8

H. Garikipati and . Mourad, The Gibbs free energy density at grain boundaries of a stressed polycrystal

S. V. Ghaisas and A. Madhukar, Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam Epitaxy, Physical Review Letters, vol.56, issue.10, p.1066, 1986.
DOI : 10.1103/PhysRevLett.56.1066

K. Gimzewski, C. Joachim, R. R. Schlittler, V. Langlais, H. Tang et al., Rotation of a Single Molecule Within a Supramolecular Bearing, Science, vol.281, issue.5376, p.531, 1998.
DOI : 10.1126/science.281.5376.531

K. Gimzewski and C. Joachim, Nanoscale Science of Single Molecules Using Local Probes, Science, vol.283, issue.5408, p.1683, 1999.
DOI : 10.1126/science.283.5408.1683

P. T. Goldfarb, J. H. Hayden, G. A. Owen, and . Briggs, Scanning Tunnelng Microscopy, Physical Review Letters, vol.78, issue.20, p.3959, 1997.
DOI : 10.1103/PhysRevLett.78.3959

A. Golovin, S. H. Davis, and P. W. , Self-organization of quantum dots in epitaxially strained solid films, Physical Review E, vol.68, issue.5, p.56203, 2003.
DOI : 10.1103/PhysRevE.68.056203

A. J. Goodwin, F. G. Skinner, and . Pettifor, Generating Transferable Tight-Binding Parameters: Application to Silicon, Europhysics Letters (EPL), vol.9, issue.7, p.701, 1989.
DOI : 10.1209/0295-5075/9/7/015

. Graff, Metal impurities in silicon-device fabrication, 2000.

L. Gray, R. Hull, and J. A. Floro, SiGe Epilayer Stress Relaxation: Quantitative Relationships Between Evolution of Surface Morphology and Misfit Dislocation Arrays, MRS Proceedings, vol.406, p.696, 2001.
DOI : 10.1063/1.114112

L. Gray, R. Hull, and J. A. Floro, Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films: Nucleation of ???quantum fortresses???, Applied Physics Letters, vol.81, issue.13, p.2445, 2002.
DOI : 10.1063/1.1509094

W. Grosse, J. Barvosa-carter, M. Zinck, M. F. Wheeler, and . Gyure, Arsenic Flux Dependence of Island Nucleation on InAs(001), Physical Review Letters, vol.89, issue.11, p.116102, 2002.
DOI : 10.1103/PhysRevLett.89.116102

A. Guha and K. C. Madhukar, As on GaAs(100), Applied Physics Letters, vol.57, issue.20, p.2110, 1990.
DOI : 10.1063/1.103914

E. Guyer and P. W. , The Stability of Lattice Mismatched Thin Films, MRS Proceedings, vol.8, p.351, 1996.
DOI : 10.1103/PhysRevLett.67.3696

G. Hoover, Canonical dynamics: Equilibrium phase-space distributions, Physical Review A, vol.31, issue.3, p.1695, 1985.
DOI : 10.1103/PhysRevA.31.1695

G. Hoover, Constant-pressure equations of motion, Physical Review A, vol.34, issue.3, p.2499, 1986.
DOI : 10.1103/PhysRevA.34.2499

J. R. Hughes, The finite element method: linear static and dynamic finite element analysis International technology roadmap for semiconductors, Semiconductor industry association, 2000.

E. Jesson, K. M. Chen, S. J. Pennycook, T. Thundat, and R. J. Warmack, Morphological Evolution of Strained Films by Cooperative Nucleation, Physical Review Letters, vol.77, issue.7, p.1330, 1996.
DOI : 10.1103/PhysRevLett.77.1330

E. Jesson, M. Kästner, and B. Voigtländer, Direct Observation of Subcritical Fluctuations during the Formation of Strained Semiconductor Islands, Physical Review Letters, vol.84, issue.2, p.330, 2000.
DOI : 10.1103/PhysRevLett.84.330

D. Johnson, K. T. Leung, A. Birch, and B. G. Orr, Adatom concentration on GaAs(001) during MBE annealing, Surface Science, vol.350, issue.1-3, p.572, 1997.
DOI : 10.1016/0039-6028(95)01110-2

T. Kitabayashi, M. Waho, and . Yamamoto, Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers, Applied Physics Letters, vol.71, issue.4
DOI : 10.1063/1.119594

E. Khor and S. Sarma, Quantum dot self-assembly in growth of strained-layer thin films: A kinetic Monte Carlo study, Physical Review B, vol.62, issue.24, p.16657, 2000.
DOI : 10.1103/PhysRevB.62.16657

L. J. Kohn, Self-Consistent Equations Including Exchange and Correlation Effects, Physical Review, vol.140, issue.4A, p.1133, 1965.
DOI : 10.1103/PhysRev.140.A1133

. Kohn, Nobel Lecture: Electronic structure of matter???wave functions and density functionals, Reviews of Modern Physics, vol.71, issue.5, p.1253, 1999.
DOI : 10.1103/RevModPhys.71.1253

A. N. Kringhøj and S. Y. Larsen, Diffusion of Sb in Strained and Relaxed Si and SiGe, Physical Review Letters, vol.76, issue.18, p.3372, 1996.
DOI : 10.1103/PhysRevLett.76.3372

. Larsen, Sb-enhanced diffusion in strained Si 1-x Ge x : Dependence on biaxial compression, Phys. Rev. B, vol.59, p.7274, 1999.

Y. Kuznetsov, J. S. Christensen, E. V. Monakhov, A. Lindgren, H. H. Radamson et al., Dopant redistribution and formation of electrically active complexes in SiGe, Materials Science in Semiconductor Processing, vol.4, issue.1-3, p.217, 2001.
DOI : 10.1016/S1369-8001(00)00142-6

. Lacombe, Modes de croissance de nano-structures de semi-conducteurs III-V obtenues directement par épitaxie : étude par microscopie électronique en transmission, CEMES, 1999.

C. Lam, C. Lee, and L. M. Sander, Competing Roughening Mechanisms in Strained Heteroepitaxy: A Fast Kinetic Monte Carlo Study, Physical Review Letters, vol.89, issue.21, p.216102, 2002.
DOI : 10.1103/PhysRevLett.89.216102

N. Larsen and P. Kringhøj, Diffusion in relaxed and strained SiGe layers, Physica Scripta, vol.69, p.92, 1997.
DOI : 10.1088/0031-8949/1997/T69/013

W. Lemire, G. A. Bishea, S. A. Heidecke, and M. D. Morse, Spectroscopy and electronic structure of jet???cooled GaAs, The Journal of Chemical Physics, vol.92, issue.1, p.121, 1990.
DOI : 10.1063/1.458481

S. Lent, P. D. Tougaw, and W. Porod, Bistable saturation in coupled quantum-dots cells, J. Appl. Phys, vol.74, p.3558, 1993.

Y. Lew, S. L. Zuo, E. T. Yu, and R. H. , superlattices, Physical Review B, vol.57, issue.11, p.6534, 1998.
DOI : 10.1103/PhysRevB.57.6534

H. Li, S. C. Moss, B. S. Han, and Z. H. Mai, Evolution of island???pit surface morphologies of InAs epilayers grown on GaAs (001) substrates, Journal of Applied Physics, vol.89, issue.7, p.3700, 2001.
DOI : 10.1063/1.1354637

Y. Y. Liu, M. Fan, H. T. Liu, H. M. Cong, and M. S. Cheng, Hydrogen Storage in Single-Walled Carbon Nanotubes at Room Temperature, Science, vol.286, issue.5442, p.1127, 1999.
DOI : 10.1126/science.286.5442.1127

Y. W. Liu, C. Zhang, and . Lu, Three-dimensional finite-element simulations of the self-organized growth of quantum dot superlattices, Physical Review B, vol.68, issue.19, p.195314, 2003.
DOI : 10.1103/PhysRevB.68.195314

V. Markov, Crystal growth for beginners, World scientific publishing, 1995.

W. Matthews and A. E. Blakeslee, Defects in epitaxial multilayers, J. Cryst. Growth, vol.27, p.118, 1974.

E. Meixner, V. A. Schöll, D. Shchukin, and . Bimberg, Self-Assembled Quantum Dots: Crossover from Kinetically Controlled to Thermodynamically Limited Growth, Physical Review Letters, vol.87, issue.23, p.236101, 2001.
DOI : 10.1103/PhysRevLett.87.236101

Y. Ahrenkiel, H. M. Zhang, A. Cheong, and . Mascarenhas, Spontaneous lateral composition modulation in III-V semiconductor alloys, MRS Bull, vol.22, pp.38-43, 1997.

A. Moll, E. Kley, M. Pehlke, and . Scheffler, GaAs equilibrium crystal shape from first principles, Physical Review B, vol.54, issue.12, p.8844, 1996.
DOI : 10.1103/PhysRevB.54.8844

L. C. Moriya, H. S. Feldman, C. A. Luftman, J. King, B. Bevk et al., epitaxial layers, Physical Review Letters, vol.71, issue.6, p.883, 1993.
DOI : 10.1103/PhysRevLett.71.883

K. Murugan and . Ramachandran, Molecular dynamics simulation for self diffusion in GaAs, Defect Diffus, Forum, vol.177, p.69, 1999.

M. Nakamura, H. Fujioka, K. Ono, M. Takeuchi, T. Mitsui et al., Molecular dynamics simulation of III???V compound semiconductor growth with MBE, Journal of Crystal Growth, vol.209, issue.2-3, p.232, 2000.
DOI : 10.1016/S0022-0248(99)00546-1

J. Nordlund, J. Nord, J. Frantz, and . Keinonen, Strain-induced Kirkendall mixing at semiconductor interfaces, Computational Materials Science, vol.18, issue.3-4, p.283, 2000.
DOI : 10.1016/S0927-0256(00)00107-5

. Ohring, The materials science of thin films, 1992.

G. Orr, D. Kessler, C. W. Snyder, and L. M. Sander, A Model for Strain-Induced Roughening and Coherent Island Growth, Europhysics Letters (EPL), vol.19, issue.1, p.33, 1992.
DOI : 10.1209/0295-5075/19/1/006

Y. Osada, S. Zaitsu, M. Matsumoto, E. Yoshida, T. Arai et al., Effect of Stress in the Deposited Silicon Nitride Films on Boron Diffusion of Silicon, Journal of The Electrochemical Society, vol.142, issue.1, p.202, 1995.
DOI : 10.1149/1.2043867

N. Pehlke, A. Moll, M. Kley, and . Scheffler, Shape and stability of quantum dots, Applied Physics A: Materials Science & Processing, vol.65, issue.6, p.525, 1997.
DOI : 10.1007/s003390050619

J. Puska, S. Pöykkö, M. Pesola, and R. M. , Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon, Physical Review B, vol.58, issue.3, p.1318, 1998.
DOI : 10.1103/PhysRevB.58.1318

V. Rao and W. Z. , Wosik: Stress effects in 2D arsenic diffusion in silicon, Proc. 405, p.345, 1996.

G. K. Riposan, M. Martin, M. L. Bouville, J. M. Falk, and . Millunchick, Island and pit formation during growth and annealing of InGaAs/GaAs films, Proc. 696, 2002.
DOI : 10.1103/PhysRevLett.78.3959

G. K. Riposan, M. Martin, M. L. Bouville, J. M. Falk, and . Millunchick, The effect of island density on pit nucleation in In0.27Ga0.73As/GaAs films, 27 Ga 0.73 As/GaAs films, p.222, 2003.
DOI : 10.1016/S0039-6028(02)02563-3

R. C. Roblin, A. Potter, and . Fathimulla, Interface roughness scattering in AlAs/InGaAs resonant tunneling diodes with an InAs subwell, Journal of Applied Physics, vol.79, issue.5, p.2502, 1996.
DOI : 10.1063/1.361104

J. H. Sayed, A. B. Jefferson, and A. G. Walker, Molecular dynamics simulations of implantation damage and recovery in semiconductors, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.102, issue.1-4, p.218, 1995.
DOI : 10.1016/0168-583X(95)80144-B

E. Connell and . Luo, Theory of strain relaxation in heteroepitaxial systems, Phys. Rev. B, vol.67, p.75316, 2003.

L. Schwoebel, Step Motion on Crystal Surfaces. II, Journal of Applied Physics, vol.40, issue.2, p.614, 1969.
DOI : 10.1063/1.1657442

J. M. Seshadri, Millunchick: Morphological evolution of highly strained InSb, Mater. Res. Soc. Proc. 618, 2000.

L. Shanahan and B. J. Spencer, A codimension-two free boundary problem for the equilibrium shapes of a small three-dimensional island in an epitaxially strained solid film, Interface Free Bound, p.1, 2002.

E. Shilkrot, R. E. Miller, and W. A. , Coupled Atomistic and Discrete Dislocation Plasticity, Physical Review Letters, vol.89, issue.2, p.25501, 2002.
DOI : 10.1103/PhysRevLett.89.025501

E. Shilkrot, D. J. Srolovitz, and J. Tersoff, Morphology evolution during the growth of strained-layer superlattices, Physical Review B, vol.62, issue.12, p.8397, 2000.
DOI : 10.1103/PhysRevB.62.8397

T. Shimizu, S. Takagi, Y. Matsumoto, E. Sato, T. Arai et al., Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon, Japanese Journal of Applied Physics, vol.37, issue.Part 1, No. 3B, p.1184, 1998.
DOI : 10.1143/JJAP.37.1184

B. Shin, A. Lin, K. Lappo, R. S. Goldman, M. C. Hanna et al., Initiation and evolution of phase separation in heteroepitaxial InAlAs films, Applied Physics Letters, vol.80, issue.18, p.3292, 2002.
DOI : 10.1063/1.1476386

O. Simmons and R. W. , Measurements of Equilibrium Vacancy Concentrations in Aluminum, Physical Review, vol.117, issue.1, p.52, 1960.
DOI : 10.1103/PhysRev.117.52

C. Slater and G. F. Koster, Simplified LCAO Method for the Periodic Potential Problem, Physical Review, vol.94, issue.6, p.1498, 1954.
DOI : 10.1103/PhysRev.94.1498

R. Smith, A semi-empirical many-body interatomic potential for modeling dynamical process in gallium arsenide, Nucl. Instrum. Meth. B, vol.92, p.335, 1992.

G. Song, E. Kim, Y. H. Lee, and Y. G. , Hwang: Fully relaxed point-defects in crystalline silicon, Phys. Rev. B, vol.48, p.14865, 1993.

M. Song, A. K. Ray, and P. K. Khowash, On the electronic structures of GaAs clusters, Journal of Physics B: Atomic, Molecular and Optical Physics, vol.27, issue.8, p.1637, 1994.
DOI : 10.1088/0953-4075/27/8/022

S. Songmuang, O. Kiravittaya, and . Schmidt, Formation of lateral quantum dot molecules around self-assembled nanoholes, Applied Physics Letters, vol.82, issue.17, p.2892, 2003.
DOI : 10.1063/1.1569992

J. Spencer, P. W. Voorhees, and J. Tersoff, Enhanced Instability of Strained Alloy Films due to Compositional Stresses, Physical Review Letters, vol.84, issue.11, p.2449, 2000.
DOI : 10.1103/PhysRevLett.84.2449

J. Spencer, P. W. Voorhees, and J. Tersoff, Stabilization of strained alloy film growth by a difference in atomic mobilities, Applied Physics Letters, vol.76, issue.21, p.3022, 2000.
DOI : 10.1063/1.126566

J. Spencer, P. W. Voorhees, and J. Tersoff, Morphological instability theory for strained alloy film growth: The effect of compositional stresses and species-dependent surface mobilities on ripple formation during epitaxial film deposition, Physical Review B, vol.64, issue.23, p.235318, 2001.
DOI : 10.1103/PhysRevB.64.235318

J. Srolovitz, On the stability of surfaces of stressed solids, Acta metallurgica 37, p.621, 1989.

H. Stillinger and T. A. Weber, Computer simulation of local order in condensed phases of silicon, Physical Review B, vol.31, issue.8, p.5262, 1985.
DOI : 10.1103/PhysRevB.31.5262

A. Sugino and . Oshiyama, Microscopic mechanism of atomic diffusion in Si under pressure, Physical Review B, vol.46, issue.19, p.12335, 1992.
DOI : 10.1103/PhysRevB.46.12335

M. Tang, L. Colombo, J. Zhu, T. D. De-la, and R. , Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes, Physical Review B, vol.55, issue.21, p.14279, 1997.
DOI : 10.1103/PhysRevB.55.14279

. Tersoff, New empirical model for the structural properties of silicon, Physical Review Letters, vol.56, issue.6, p.632, 1986.
DOI : 10.1103/PhysRevLett.56.632

. Tersoff, New empirical approach for the structure and energy of covalent systems, Physical Review B, vol.37, issue.12, p.6991, 1988.
DOI : 10.1103/PhysRevB.37.6991

J. Tersoff, A. W. Van-der-gon, and R. M. , Critical island size for layer-by-layer growth, Physical Review Letters, vol.72, issue.2, p.266, 1994.
DOI : 10.1103/PhysRevLett.72.266

J. Tersoff and F. K. Legoues, Competing relaxation mechanisms in strained layers, Physical Review Letters, vol.72, issue.22, p.3570, 1994.
DOI : 10.1103/PhysRevLett.72.3570

J. Tersoff and R. M. Tromp, Shape transition in growth of strained islands: Spontaneous formation of quantum wires, Physical Review Letters, vol.70, issue.18, p.2782, 1993.
DOI : 10.1103/PhysRevLett.70.2782

M. D. Tersoff, B. G. Johnson, and . Orr, Adatom Densities on GaAs: Evidence for Near-Equilibrium Growth, Physical Review Letters, vol.78, issue.2, p.282, 1997.
DOI : 10.1103/PhysRevLett.78.282

W. Theis and R. M. Tromp, Nucleation in Si(001) Homoepitaxial Growth, Physical Review Letters, vol.76, issue.15
DOI : 10.1103/PhysRevLett.76.2770

D. Vanderbilt and L. K. Wickham, Elastic Energies of Coherent Germanium Islands on Silicon, MRS Proceedings, vol.146, p.555, 1991.
DOI : 10.1103/PhysRevLett.65.1020

E. Vandervelde, P. Kumar, T. Kobayashi, J. L. Gray, T. Pernell et al., Growth of quantum fortress structures in Si1???xGex/Si via combinatorial deposition, Applied Physics Letters, vol.83, issue.25, p.5205, 2003.
DOI : 10.1063/1.1636268

A. Venables, G. D. Spiller, and M. Handbücken, Nucleation and growth of thin films, Reports on Progress in Physics, vol.47, issue.4, p.399, 1984.
DOI : 10.1088/0034-4885/47/4/002

H. Vineyard, Frequency factors and isotope effects in solid state rate processes, Journal of Physics and Chemistry of Solids, vol.3, issue.1-2, p.121, 1957.
DOI : 10.1016/0022-3697(57)90059-8

. Walton, Nucleation of Vapor Deposits, The Journal of Chemical Physics, vol.37, issue.10, p.2182, 1962.
DOI : 10.1063/1.1732985

D. Watkins and J. W. Corbett, Center, Physical Review, vol.134, issue.5A, p.1359, 1964.
DOI : 10.1103/PhysRev.134.A1359

J. Whaley and P. I. Cohen, Relaxation of strained InGaAs during molecular beam epitaxy, Applied Physics Letters, vol.57, issue.2, p.144, 1990.
DOI : 10.1063/1.103966

A. Xie, P. Madhukar, N. P. Chen, and . Kobayashi, Vertically Self-Organized InAs Quantum Box Islands on GaAs(100), Physical Review Letters, vol.75, issue.13, p.2542, 1995.
DOI : 10.1103/PhysRevLett.75.2542

J. Yang, W. J. Moore, B. R. Bennett, and B. V. Shanabrook, Growth and characterisation of InAs/InGaSb/InAs/AlSb infrared laser structures, Growth and characterisation of InAs/InGaSb/InAs/AlSb infrared laser structures, p.270, 1998.
DOI : 10.1049/el:19981221

W. Yu and A. Madhukar, Molecular Dynamics Study of Coherent Island Energetics, Stresses, and Strains in Highly Strained Epitaxy, Physical Review Letters, vol.79, issue.5, p.905, 1997.
DOI : 10.1103/PhysRevLett.79.905

T. Zaitsu, J. Shimizu, S. Takeuchi, M. Matsumoto, T. Yoshida et al., Boron Diffusion in Compressively Stressed Float Zone-Silicon Induced by Si[sub 3]N[sub 4] Films, Journal of The Electrochemical Society, vol.145, issue.1, p.258, 1998.
DOI : 10.1149/1.1838244

B. G. Zhang and . Orr, Two-component simulation for molecular beam epitaxy growth of GaAs, Physical Review B, vol.67, issue.7, p.75305, 2003.
DOI : 10.1103/PhysRevB.67.075305

W. Zhang, A. F. Bower, and P. Liu, Morphological evolution driven by strain induced surface diffusion, Thin solids films, p.9, 2003.

M. J. Zhao, H. Aziz, S. Gossman, D. Mitha, and . Schiferl, Activation volume for boron diffusion in silicon and implications for strained films, Applied Physics Letters, vol.74, issue.1, p.31, 1999.
DOI : 10.1063/1.123123

M. J. Zhao, H. Aziz, S. Gossman, D. Mitha, and . Schiferl, Activation volume for antimony diffusion in silicon and implications for strained films, Applied Physics Letters, vol.75, issue.7, p.941, 1999.
DOI : 10.1063/1.124561

J. Zywietz, F. Furthmüller, and . Bechstedt, Neutral Vacancies in Group-IV Semiconductors, physica status solidi (b), vol.210, issue.1, p.13, 1998.
DOI : 10.1002/(SICI)1521-3951(199811)210:1<13::AID-PSSB13>3.0.CO;2-P