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do not get the right bond length and cohesive energy for the ZnS structure Therefore they were not included in our study Smith and Ashu committed the same error: c is much smaller than d, which leads to almost no angular dependence and c 44 and Young's modulus are 0. This makes them useless: they get an elastic behavior closer to rubber than to III-V semiconductors. For GaAs, Sayed gives the best results for elasticity against Albe as the latter has a too weak c 44 . They give the same results for dimers but Sayed does not describe other structures very well, the " graphitic " structure for instance in very close in energy to the ZnS ground state. No comparison being possible for surfaces it is not really possible to decide which potential is best. For InAs, once Ashu is removed only one potential (Nordlund) remains. There are two " useable " potentials for GaAs and one only for InAs and AlAs, the 6 remaining potentials: Film stress-related vacancy supersaturation in silicon under low pressure chemical vapor deposited silicon nitride films, J. App. Phys, p.4914, 1988. ,
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